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Optics and Spectroscopy, Vol. 107, No. 4. (1 October 2009), pp. 515-520, doi:10.1134/s0030400x09100038 Key: citeulike:6203430
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The properties of doped semiconductors based on lead telluride, which can be used to design highly sensitive terahertz photodetectors, are described. It is shown that these properties allow one to develop photodetectors with much better parameters than those of the best world analogs.
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