Fine-tuned profile simulation of holographically exposed photoresist gratings Export

@article{citeulike:6002394, abstract = {The profiles of holographically exposed photoresist gratings are simulated according to the state of the art obtained in microlithography. The accuracy of the simulation depends on the accuracy of the development rate R of the photoresist, which is a function of the normalised unexposed photoactive compound concentration or inhibitor concentration M after exposure. It is shown that this development rate R has to be fine tuned by using experimentally obtained photoresist profiles in order to obtain the required accuracy. With fine tuned development rate, a very good agreement between theory and experiment can be obtained in the case of holographically exposed photoresist gratings with periods in the range of 1 μm. The properties of the photoresist, of the development and of the optical set-up which are necessary for sinusoidal photoresist profiles are also discussed.}, author = {Zanke, C.}, citeulike-article-id = {6002394}, citeulike-linkout-0 = {http://dx.doi.org/10.1016/S0030-4018(98)00252-1}, citeulike-linkout-1 = {http://linkinghub.elsevier.com/retrieve/pii/S0030-4018(98)00252-1}, day = {15}, doi = {10.1016/S0030-4018(98)00252-1}, issn = {00304018}, journal = {Optics Communications}, keywords = {lithography}, month = {August}, number = {1-3}, pages = {109--118}, posted-at = {2009-10-24 20:37:32}, priority = {2}, title = {Fine-tuned profile simulation of holographically exposed photoresist gratings}, url = {http://dx.doi.org/10.1016/S0030-4018(98)00252-1}, volume = {154}, year = {1998} }

TY - JOUR ID - citeulike:6002394 L3 - citeulike-article-id:6002394 N2 - The profiles of holographically exposed photoresist gratings are simulated according to the state of the art obtained in microlithography. The accuracy of the simulation depends on the accuracy of the development rate R of the photoresist, which is a function of the normalised unexposed photoactive compound concentration or inhibitor concentration M after exposure. It is shown that this development rate R has to be fine tuned by using experimentally obtained photoresist profiles in order to obtain the required accuracy. With fine tuned development rate, a very good agreement between theory and experiment can be obtained in the case of holographically exposed photoresist gratings with periods in the range of 1 μm. The properties of the photoresist, of the development and of the optical set-up which are necessary for sinusoidal photoresist profiles are also discussed. IS - 1-3 JF - Optics Communications SN - 00304018 EP - 118 TI - Fine-tuned profile simulation of holographically exposed photoresist gratings VL - 154 SP - 109 KW - lithography AU - Zanke, C PY - 1998/08/15/ UR - http://dx.doi.org/10.1016/S0030-4018(98)00252-1 ER -