Electromigration in metals Export

@article{citeulike:4107769, abstract = {This paper provides an overview on the current understanding of electromigration in metals. The discussion is first focused on studies in bulk metals and alloys. This part includes a thermodynamic formulation of electromigration, a kinetic analysis of the atomic processes and a review of the theory. In addition, experimental results in interstitial and substitutional systems are summarised. The second part of the paper reviews the studies in metallic thin films. This emerged as an important area of electromigration studies since the late 1960s when electromigration damage was found to cause failure of conductor lines in integrated circuits. The discussion will review first the basic nature of electromigration in thin films with emphasis on the role of grain boundaries in mass transport and damage formation. Then the materials issues of electromigration will be explored according to the scaling trends in VLSI technology. Finally, the recent results of electromigration in fine lines and device contacts of dimensions in the micrometre range are discussed.}, author = {Ho, P. S. and Kwok, T.}, citeulike-article-id = {4107769}, citeulike-linkout-0 = {http://dx.doi.org/10.1088/0034-4885/52/3/002}, doi = {10.1088/0034-4885/52/3/002}, journal = {Reports on Progress in Physics}, keywords = {electromigration}, number = {3}, pages = {301--348}, posted-at = {2009-02-26 15:23:07}, priority = {2}, title = {Electromigration in metals}, url = {http://dx.doi.org/10.1088/0034-4885/52/3/002}, volume = {52}, year = {1989} }

TY - JOUR ID - citeulike:4107769 L3 - citeulike-article-id:4107769 N2 - This paper provides an overview on the current understanding of electromigration in metals. The discussion is first focused on studies in bulk metals and alloys. This part includes a thermodynamic formulation of electromigration, a kinetic analysis of the atomic processes and a review of the theory. In addition, experimental results in interstitial and substitutional systems are summarised. The second part of the paper reviews the studies in metallic thin films. This emerged as an important area of electromigration studies since the late 1960s when electromigration damage was found to cause failure of conductor lines in integrated circuits. The discussion will review first the basic nature of electromigration in thin films with emphasis on the role of grain boundaries in mass transport and damage formation. Then the materials issues of electromigration will be explored according to the scaling trends in VLSI technology. Finally, the recent results of electromigration in fine lines and device contacts of dimensions in the micrometre range are discussed. IS - 3 JF - Reports on Progress in Physics EP - 348 TI - Electromigration in metals VL - 52 SP - 301 KW - electromigration AU - Ho, PS AU - Kwok, T PY - 1989/// UR - http://dx.doi.org/10.1088/0034-4885/52/3/002 ER -