Electrical properties of La-doped strontium titanate thin films Export

@article{citeulike:766356, abstract = {We report on the properties of lanthanum-doped SrTiO3 thin films grown by off-axis laser ablation on LaAlO3 and SrTiO3 substrates in oxygen partial pressures ranging from 10\&\#150;8 Torr to 55 mTorr. The La/Sr doping ratio of the ablation target was 1\%. The resulting films have carrier densities measured in the range of 4.7\&\#150;17.5\×1019 cm\&\#150;3 independent of temperature from room temperature to 4 K and low-temperature mobilities as high as 130 cm2/V s. These films are much more tolerant to the presence of oxygen during growth than were similar Nb-doped films reported previously. \©2002 American Institute of Physics.}, author = {Olaya, David and Pan, Feng and Rogers, Charles T. and Price, John C.}, citeulike-article-id = {766356}, citeulike-linkout-0 = {http://scitation.aip.org/getabs/servlet/GetabsServlet?prog=normal&id=APPLAB000080000016002928000001&idtype=cvips&gifs=yes}, citeulike-linkout-1 = {http://link.aip.org/link/?APL/80/2928}, citeulike-linkout-2 = {http://dx.doi.org/10.1063/1.1470694}, citeulike-linkout-3 = {http://dx.doi.org/10.1063/1.1470694}, doi = {10.1063/1.1470694}, journal = {Applied Physics Letters}, keywords = {electrical, film, slto, sto}, number = {16}, pages = {2928--2930}, posted-at = {2006-07-20 09:53:55}, priority = {0}, publisher = {AIP}, title = {Electrical properties of La-doped strontium titanate thin films}, url = {http://dx.doi.org/10.1063/1.1470694}, volume = {80}, year = {2002} }

TY - JOUR ID - citeulike:766356 L3 - citeulike-article-id:766356 N2 - We report on the properties of lanthanum-doped SrTiO3 thin films grown by off-axis laser ablation on LaAlO3 and SrTiO3 substrates in oxygen partial pressures ranging from 10–8 Torr to 55 mTorr. The La/Sr doping ratio of the ablation target was 1%. The resulting films have carrier densities measured in the range of 4.7–17.5×1019 cm–3 independent of temperature from room temperature to 4 K and low-temperature mobilities as high as 130 cm2/V s. These films are much more tolerant to the presence of oxygen during growth than were similar Nb-doped films reported previously. ©2002 American Institute of Physics. IS - 16 JF - Applied Physics Letters EP - 2930 TI - Electrical properties of La-doped strontium titanate thin films PB - AIP VL - 80 SP - 2928 KW - electrical KW - film KW - slto KW - sto AU - Olaya, David AU - Pan, Feng AU - Rogers, Charles AU - Price, John PY - 2002/// UR - http://dx.doi.org/10.1063/1.1470694 ER -