Electrical conductivity of sputtered films of strontium titanate Export

@article{citeulike:935487, abstract = {Among the most critical parameters in the fabrication of rf-sputtered SrTiO3 films is the argon/oxygen ratio in the sputter gas and the substrate temperature, both during sputtering and during postannealing. After sputtering at 500 \°C, SrTiO3 layers on Al2O3 substrates are partially crystalline. In this case the SrTiO3 lattice is enlarged compared to the bulk material. With increasing temperatures of postannealing, the crystallites grow and the lattice shrinks. In particular, films that are sputtered with a sputter gas containing oxygen show an additional phase of TiO2 when they are annealed at temperatures of more than 1000 \°C. This paper shows for the first time results of the investigation of sputtered SrTiO3 films on Al2 O3 substrates as a function of oxygen partial pressure P(O2 ). The measurements performed on the sputtered films indicate semiconducting properties in agreement with the bulk material: At temperatures between 700 and 1100 \°C the electrical conductivity of sputtered layers changes from p-type to n-type as the oxygen partial pressure decreases from 1 to 10\&\#150;15 bar. The enthalpy of oxidation in the SrTiO3 films is 1.24 eV, and the energy gap is 3.30 eV. These values are in agreement with those reported for bulk materials. Journal of Applied Physics is copyrighted by The American Institute of Physics.}, author = {Gerblinger, Josef and Meixner, Hans}, citeulike-article-id = {935487}, citeulike-linkout-0 = {http://scitation.aip.org/getabs/servlet/GetabsServlet?prog=normal&id=JAPIAU000067000012007453000001&idtype=cvips&gifs=yes}, citeulike-linkout-1 = {http://link.aip.org/link/?JAP/67/7453}, citeulike-linkout-2 = {http://dx.doi.org/10.1063/1.344535}, doi = {10.1063/1.344535}, journal = {Journal of Applied Physics}, keywords = {conductivity, electrical, sto}, number = {12}, pages = {7453--7459}, posted-at = {2006-11-07 14:17:59}, priority = {2}, publisher = {AIP}, title = {Electrical conductivity of sputtered films of strontium titanate}, url = {http://dx.doi.org/10.1063/1.344535}, volume = {67}, year = {1990} }

TY - JOUR ID - citeulike:935487 L3 - citeulike-article-id:935487 N2 - Among the most critical parameters in the fabrication of rf-sputtered SrTiO3 films is the argon/oxygen ratio in the sputter gas and the substrate temperature, both during sputtering and during postannealing. After sputtering at 500 °C, SrTiO3 layers on Al2O3 substrates are partially crystalline. In this case the SrTiO3 lattice is enlarged compared to the bulk material. With increasing temperatures of postannealing, the crystallites grow and the lattice shrinks. In particular, films that are sputtered with a sputter gas containing oxygen show an additional phase of TiO2 when they are annealed at temperatures of more than 1000 °C. This paper shows for the first time results of the investigation of sputtered SrTiO3 films on Al2 O3 substrates as a function of oxygen partial pressure P(O2 ). The measurements performed on the sputtered films indicate semiconducting properties in agreement with the bulk material: At temperatures between 700 and 1100 °C the electrical conductivity of sputtered layers changes from p-type to n-type as the oxygen partial pressure decreases from 1 to 10–15 bar. The enthalpy of oxidation in the SrTiO3 films is 1.24 eV, and the energy gap is 3.30 eV. These values are in agreement with those reported for bulk materials. Journal of Applied Physics is copyrighted by The American Institute of Physics. IS - 12 JF - Journal of Applied Physics EP - 7459 TI - Electrical conductivity of sputtered films of strontium titanate PB - AIP VL - 67 SP - 7453 KW - conductivity KW - electrical KW - sto AU - Gerblinger, Josef AU - Meixner, Hans PY - 1990/// UR - http://dx.doi.org/10.1063/1.344535 ER -