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Nanotechnology, IEEE Transactions on, Vol. 7, No. 4. (July 2008), pp. 401-408, doi:10.1109/tnano.2008.920207 Key: citeulike:11973023
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In this paper, a very accurate model of optical modulators in silicon-on-insulator technology is developed and validated using experimental results reported in literature. Using an optimized nanometer MOS structure, a significant bandwidth increase (around 45%), length decrease (around four times), and power consumption reduction (three times) with respect to the state-of-the-art have been obtained.
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