We report low temperature inelastic light scattering by intersubband excitations in the regime of the fractional quantum Hall effect. In a single GaAs-AlGaAs heterojunction there is a marked dependence on illumination intensity that becomes less pronounced at power densities p ~ 10-5 - 10-6 W/cm2. In 250A single quantum wells there is no significant dependence on illumination for p -3 W/cm2. The energies of intersubband charge-density excitations exhibit red-shifts that are interpreted as changes of electron-electron interactions in the extreme magnetic quantum limit.