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Inelastic light scattering in the regime of the fractional quantum hall effect Export

Solid State Communications, Vol. 84, No. 1-2. (October 1992), pp. 103-107.

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quantum-hall raman

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We report low temperature inelastic light scattering by intersubband excitations in the regime of the fractional quantum Hall effect. In a single GaAs-AlGaAs heterojunction there is a marked dependence on illumination intensity that becomes less pronounced at power densities p ~ 10-5 - 10-6 W/cm2. In 250A single quantum wells there is no significant dependence on illumination for p -3 W/cm2. The energies of intersubband charge-density excitations exhibit red-shifts that are interpreted as changes of electron-electron interactions in the extreme magnetic quantum limit.


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