THz emission from coherently controlled photocurrents in GaAs Export

@article{citeulike:998753, abstract = {We report broadband terahertz radiation from ballistic photocurrents generated via quantum interference of one- and two-photon absorption in low-temperature-grown and semi-insulating GaAs at 295 K. For 90 fs, 1550 and 775 nm optical pulses, we obtain phase-controllable near-single cycle 4 THz radiation. Higher frequency THz emission should be achievable with shorter pulses. At a 250 kHz repetition rate and average powers of 10 mW (1550 nm) and 400 \µW (775 nm), we measure 3 nW of THz power, limited mainly by phase walkoff of the optical beams within the 1.5-\µm-thick sample and collection efficiency. \©1999 American Institute of Physics.}, author = {Cote, D. and Fraser, J. M. and Decamp, M. and Bucksbaum, P. H. and van Driel, H. M.}, citeulike-article-id = {998753}, citeulike-linkout-0 = {http://scitation.aip.org/getabs/servlet/GetabsServlet?prog=normal&id=APPLAB000075000025003959000001&idtype=cvips&gifs=yes}, citeulike-linkout-1 = {http://link.aip.org/link/?APL/75/3959}, citeulike-linkout-2 = {http://dx.doi.org/10.1063/1.125531}, doi = {10.1063/1.125531}, journal = {Applied Physics Letters}, keywords = {quantum-interference-control, semiconductors, thz}, number = {25}, pages = {3959--3961}, posted-at = {2006-12-17 19:21:22}, priority = {0}, publisher = {AIP}, title = {THz emission from coherently controlled photocurrents in GaAs}, url = {http://dx.doi.org/10.1063/1.125531}, volume = {75}, year = {1999} }

TY - JOUR ID - citeulike:998753 L3 - citeulike-article-id:998753 N2 - We report broadband terahertz radiation from ballistic photocurrents generated via quantum interference of one- and two-photon absorption in low-temperature-grown and semi-insulating GaAs at 295 K. For 90 fs, 1550 and 775 nm optical pulses, we obtain phase-controllable near-single cycle 4 THz radiation. Higher frequency THz emission should be achievable with shorter pulses. At a 250 kHz repetition rate and average powers of 10 mW (1550 nm) and 400 µW (775 nm), we measure 3 nW of THz power, limited mainly by phase walkoff of the optical beams within the 1.5-µm-thick sample and collection efficiency. ©1999 American Institute of Physics. IS - 25 JF - Applied Physics Letters EP - 3961 TI - THz emission from coherently controlled photocurrents in GaAs PB - AIP VL - 75 SP - 3959 KW - quantum-interference-control KW - semiconductors KW - thz AU - Cote, D AU - Fraser, JM AU - Decamp, M AU - Bucksbaum, PH AU - van Driel, HM PY - 1999/// UR - http://dx.doi.org/10.1063/1.125531 ER -