Observation of Coherently Controlled Photocurrent in Unbiased, Bulk GaAs Export

@article{citeulike:998771, abstract = {We demonstrate room temperature coherent generation and control of a directional photocurrent in bulk GaAs via simultaneous one- and two-photon interband absorption processes using phase-related 1 ps or 175 fs pulses at 0.775 and 1.55 μm. Electrical currents generated in low-temperature-grown (LT) and normal bulk GaAs are collected via gold electrodes. Current densities as high as 3 nA/μm 2 in LT-GaAs are measured for injected carrier densities as low as 10 14 cm -3 and for peak irradiances of 18 MW cm -2 ( 1.550 μm) and 3 kW cm -2 ( 0.775 μm).}, author = {Hach\'{e}, A. and Kostoulas, Y. and Atanasov, R. and Hughes, J. L. P. and Sipe, J. E. and van Driel, H. M.}, citeulike-article-id = {998771}, citeulike-linkout-0 = {http://scitation.aip.org/getabs/servlet/GetabsServlet?prog=normal&id=PRLTAO000078000002000306000001&idtype=cvips&gifs=yes}, citeulike-linkout-1 = {http://link.aps.org/abstract/PRL/v78/p306}, citeulike-linkout-2 = {http://dx.doi.org/10.1103/PhysRevLett.78.306}, citeulike-linkout-3 = {http://link.aps.org/abstract/PRL/v78/i2/p306_1}, citeulike-linkout-4 = {http://link.aps.org/pdf/PRL/v78/i2/p306_1}, doi = {10.1103/PhysRevLett.78.306}, journal = {Physical Review Letters}, keywords = {quantum-interference-control, semiconductors}, month = {Jan}, number = {2}, pages = {306--309}, posted-at = {2006-12-17 19:51:30}, priority = {2}, publisher = {American Physical Society}, title = {Observation of Coherently Controlled Photocurrent in Unbiased, Bulk GaAs}, url = {http://dx.doi.org/10.1103/PhysRevLett.78.306}, volume = {78}, year = {1997} }

TY - JOUR ID - citeulike:998771 L3 - citeulike-article-id:998771 N2 - We demonstrate room temperature coherent generation and control of a directional photocurrent in bulk GaAs via simultaneous one- and two-photon interband absorption processes using phase-related 1 ps or 175 fs pulses at 0.775 and 1.55 μm. Electrical currents generated in low-temperature-grown (LT) and normal bulk GaAs are collected via gold electrodes. Current densities as high as 3 nA/μm 2 in LT-GaAs are measured for injected carrier densities as low as 10 14 cm -3 and for peak irradiances of 18 MW cm -2 ( 1.550 μm) and 3 kW cm -2 ( 0.775 μm). IS - 2 JF - Physical Review Letters EP - 309 TI - Observation of Coherently Controlled Photocurrent in Unbiased, Bulk GaAs PB - American Physical Society VL - 78 SP - 306 KW - quantum-interference-control KW - semiconductors AU - Haché, A AU - Kostoulas, Y AU - Atanasov, R AU - Hughes, JLP AU - Sipe, JE AU - van Driel, HM PY - 1997/Jan// UR - http://dx.doi.org/10.1103/PhysRevLett.78.306 ER -