Bound exciton recombination in beryllium-doped silicon Export

@article{Henry81, abstract = {The low-temperature photoluminescence of beryllium-doped silicon is dominated by a system with sharp no-phonon lines at approximately 1.077 eV with well resolved phonon-assisted replicas at lower energies. The temperature dependence of the relative intensities of the no-phonon lines and of the phonon-assisted structure is similar to that which has been observed for electron-hole recombination at axial isoelectronic traps in gallium phosphide. Using Zeeman spectroscopy the recombination centre in beryllium-doped silicon is shown to have (001) symmetry and is identified with beryllium substitutional-interstitial pairs which are expected to predominate in this material. A weak acceptor-like bound exciton spectrum is also reported.}, author = {Henry, M. O. and Lightowlers, E. C. and Killoran, N. and Dunstan, D. J. and Cavenett, B. C.}, citeulike-article-id = {3501018}, citeulike-linkout-0 = {http://dx.doi.org/10.1088/0022-3719/14/10/002}, doi = {10.1088/0022-3719/14/10/002}, journal = {Journal of Physics C: Solid State Physics}, keywords = {beryllium, boundexciton, photoluminescence, silicon}, number = {10}, pages = {L255--L261}, posted-at = {2008-11-10 12:21:00}, priority = {4}, title = {Bound exciton recombination in beryllium-doped silicon}, url = {http://dx.doi.org/10.1088/0022-3719/14/10/002}, volume = {14}, year = {1981} }

TY - JOUR ID - Henry81 L3 - citeulike-article-id:3501018 N2 - The low-temperature photoluminescence of beryllium-doped silicon is dominated by a system with sharp no-phonon lines at approximately 1.077 eV with well resolved phonon-assisted replicas at lower energies. The temperature dependence of the relative intensities of the no-phonon lines and of the phonon-assisted structure is similar to that which has been observed for electron-hole recombination at axial isoelectronic traps in gallium phosphide. Using Zeeman spectroscopy the recombination centre in beryllium-doped silicon is shown to have (001) symmetry and is identified with beryllium substitutional-interstitial pairs which are expected to predominate in this material. A weak acceptor-like bound exciton spectrum is also reported. IS - 10 JF - Journal of Physics C: Solid State Physics EP - L261 TI - Bound exciton recombination in beryllium-doped silicon VL - 14 SP - L255 KW - beryllium KW - boundexciton KW - photoluminescence KW - silicon AU - Henry, MO AU - Lightowlers, EC AU - Killoran, N AU - Dunstan, DJ AU - Cavenett, BC PY - 1981/// UR - http://dx.doi.org/10.1088/0022-3719/14/10/002 ER -