A complex luminescent defect in Be-doped oxygen-rich silicon Export

@article{Dary96, abstract = {A photoluminescence (PL) study of oxygen-rich (CZ) silicon subject to beryllium ion implantation and subsequent annealing is reported. A characteristic bound exciton luminescence spectrum is observed with a narrow zero-phonon line at 1137.98(5) meV, denoted , accompanied by a vibrational sideband extending for more than 200 meV from the zero-phonon line and containing lattice- and defect-related vibrational modes. The spectrum is not observed in oxygen-lean, float zone (FZ) silicon except where beryllium and oxygen are co-implanted. The response of the luminescence system to external perturbations such as temperature, uniaxial stress and magnetic fields are reported. The defect structure is found to have rhombic I symmetry and the absence of any splitting in a magnetic field indicates that the line is a magnetic singlet. The data are interpreted in the context of a pseudodonor model.}, author = {Daly, S. E. and Henry, M. O. and Mcguigan, K. G. and Carmo, Do M. C.}, citeulike-article-id = {3501041}, citeulike-linkout-0 = {http://dx.doi.org/10.1088/0268-1242/11/7/004}, doi = {10.1088/0268-1242/11/7/004}, journal = {Semiconductor Science and Technology}, keywords = {beryllium, beryllium-doped\_silicon, ion\_implantation, isoelectronic\_bound\_exciton, oxygen, phonon\_replica, photoluminescence, pseudodonor, temperature\_dependence, uniaxial\_stress, zeeman\_spectroscopy, zero-phonon}, number = {7}, pages = {996--1001}, posted-at = {2008-11-10 12:42:36}, priority = {2}, title = {A complex luminescent defect in Be-doped oxygen-rich silicon}, url = {http://dx.doi.org/10.1088/0268-1242/11/7/004}, volume = {11}, year = {1996} }

TY - JOUR ID - Dary96 L3 - citeulike-article-id:3501041 N2 - A photoluminescence (PL) study of oxygen-rich (CZ) silicon subject to beryllium ion implantation and subsequent annealing is reported. A characteristic bound exciton luminescence spectrum is observed with a narrow zero-phonon line at 1137.98(5) meV, denoted , accompanied by a vibrational sideband extending for more than 200 meV from the zero-phonon line and containing lattice- and defect-related vibrational modes. The spectrum is not observed in oxygen-lean, float zone (FZ) silicon except where beryllium and oxygen are co-implanted. The response of the luminescence system to external perturbations such as temperature, uniaxial stress and magnetic fields are reported. The defect structure is found to have rhombic I symmetry and the absence of any splitting in a magnetic field indicates that the line is a magnetic singlet. The data are interpreted in the context of a pseudodonor model. IS - 7 JF - Semiconductor Science and Technology EP - 1001 TI - A complex luminescent defect in Be-doped oxygen-rich silicon VL - 11 SP - 996 KW - beryllium KW - beryllium-doped_silicon KW - ion_implantation KW - isoelectronic_bound_exciton KW - oxygen KW - phonon_replica KW - photoluminescence KW - pseudodonor KW - temperature_dependence KW - uniaxial_stress KW - zeeman_spectroscopy KW - zero-phonon AU - Daly, SE AU - Henry, MO AU - Mcguigan, KG AU - Carmo, Do PY - 1996/// UR - http://dx.doi.org/10.1088/0268-1242/11/7/004 ER -