Average density of states in disordered graphene systems

by: Shangduan Wu, Lei Jing, Qunxiang Li, QW Shi, Jie Chen, Haibin Su, Xiaoping Wang, Jinlong Yang

Physical Review B (Condensed Matter and Materials Physics), Vol. 77, No. 19. (2008)

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Abstract

In this paper, the average density of states (ADOS) in graphene with binary alloy disorders is calculated by the recursion method. We observed an obvious resonant peak and a dip in ADOS curves near the Dirac point, which result from interactions with surrounding impurities. We also found that the resonance energy (Er) and the dip position (dip) are strongly dependent on the concentration of disorders (x) and their on-site potentials (v). A linear relation, dip=xv, holds when the impurity concentration is low. This relation can also be extended when the impurity concentration is high, but with certain constraints. We also compute ADOS with a finite density of vacancies.

@article{citeulike:2794085, abstract = {In this paper, the average density of states (ADOS) in graphene with binary alloy disorders is calculated by the recursion method. We observed an obvious resonant peak and a dip in ADOS curves near the Dirac point, which result from interactions with surrounding impurities. We also found that the resonance energy (Er) and the dip position (dip) are strongly dependent on the concentration of disorders (x) and their on-site potentials (v). A linear relation, dip=xv, holds when the impurity concentration is low. This relation can also be extended when the impurity concentration is high, but with certain constraints. We also compute ADOS with a finite density of vacancies.}, author = {Wu, Shangduan and Jing, Lei and Li, Qunxiang and Shi, Q. W. and Chen, Jie and Su, Haibin and Wang, Xiaoping and Yang, Jinlong }, citeulike-article-id = {2794085}, doi = {10.1103/PhysRevB.77.195411}, journal = {Physical Review B (Condensed Matter and Materials Physics)}, keywords = {ados, disorder, graphene}, number = {19}, posted-at = {2008-05-13 09:56:50}, priority = {2}, publisher = {APS}, title = {Average density of states in disordered graphene systems}, url = {http://scitation.aip.org/getabs/servlet/GetabsServlet?prog=normal\&id=PRBMDO000077000019195411000001\&idtype=cvips\&gifs=yes}, volume = {77}, year = {2008} }

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TY - JOUR ID - citeulike:2794085 L3 - citeulike-article-id:2794085 TI - Average density of states in disordered graphene systems JF - Physical Review B (Condensed Matter and Materials Physics) VL - 77 IS - 19 PB - APS N2 - In this paper, the average density of states (ADOS) in graphene with binary alloy disorders is calculated by the recursion method. We observed an obvious resonant peak and a dip in ADOS curves near the Dirac point, which result from interactions with surrounding impurities. We also found that the resonance energy (Er) and the dip position (dip) are strongly dependent on the concentration of disorders (x) and their on-site potentials (v). A linear relation, dip=xv, holds when the impurity concentration is low. This relation can also be extended when the impurity concentration is high, but with certain constraints. We also compute ADOS with a finite density of vacancies. KW - ados KW - disorder KW - graphene AU - Wu, Shangduan AU - Jing, Lei AU - Li, Qunxiang AU - Shi, QW AU - Chen, Jie AU - Su, Haibin AU - Wang, Xiaoping AU - Yang, Jinlong PY - 2008/// UR - http://scitation.aip.org/getabs/servlet/GetabsServlet?prog=normal&id=PRBMDO000077000019195411000001&idtype=cvips&gifs=yes ER -

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