Study of Structure, Magnetic and Electrical Properties of Co<formula formulatype="inline"><tex Notation="TeX">$_2$</tex> </formula>MnSi <newline/>Heusler Alloy Thin Films Onto n-Si Substrates TeX Export

@article{citeulike:5909707, abstract = {<para> The structural, magnetic and electrical properties of Co<formula formulatype="inline"> <tex Notation="TeX">\$\_{2}\$</tex></formula>MnSi thin films grown onto n-doped Si(110) and n-Si(100) substrates were studied. The structure and magnetic properties of Co<formula formulatype="inline"><tex Notation="TeX">\$\_{2}\$</tex> </formula>MnSi thin films were found to depend strongly on the annealing temperature <formula formulatype="inline"><tex Notation="TeX">\$(T\_{rm A})\$</tex></formula>. At <formula formulatype="inline"><tex Notation="TeX">\$T\_{rm A} =275hbox{--}350^{circ}\$</tex> </formula>C, the Co<formula formulatype="inline"><tex Notation="TeX">\$\_{2}\$</tex> </formula>MnSi films were of B2 phase with <formula formulatype="inline"> <tex Notation="TeX">\$langle 100rangle\$</tex></formula> texture and possessed magnetic moment on both substrates. The saturation magnetization <formula formulatype="inline"><tex Notation="TeX">\$(M\_{rm S})\$</tex></formula> of Co<formula formulatype="inline"><tex Notation="TeX">\$\_{2}\$</tex></formula>MnSi thin films was found maximum at <formula formulatype="inline"><tex Notation="TeX">\$T\_{rm A} =300^{circ}\$</tex></formula>C. Chemical reaction might occur between Co<formula formulatype="inline"><tex Notation="TeX">\$\_{2}\$</tex></formula>MnSi and Si above <formula formulatype="inline"><tex Notation="TeX">\$T\_{rm A} =350^{circ}\$</tex> </formula>C which caused nearly zero <formula formulatype="inline"><tex Notation="TeX">\$M\_{rm S}\$</tex></formula> value. The current-voltage (<formula formulatype="inline"> <tex Notation="TeX">\$I\$</tex></formula>-<formula formulatype="inline"><tex Notation="TeX">\$V\$</tex></formula>) characteristic of the Co<formula formulatype="inline"> <tex Notation="TeX">\$\_{2}\$</tex></formula>MnSi thin films onto n-Si substrates was obtained linear suggesting the contacts were ohmic nature. </para>}, author = {Nahid, M. A. I. and Oogane, M. and Naganuma, H. and Ando, Y.}, citeulike-article-id = {5909707}, citeulike-linkout-0 = {http://dx.doi.org/10.1109/TMAG.2009.2024320}, citeulike-linkout-1 = {http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=5257081}, day = {22}, doi = {10.1109/TMAG.2009.2024320}, journal = {Magnetics, IEEE Transactions on}, keywords = {cms, heusler, si, spininjection}, month = {September}, number = {10}, pages = {4030--4032}, posted-at = {2009-10-08 15:19:37}, priority = {0}, title = {Study of Structure, Magnetic and Electrical Properties of Co<formula formulatype="inline"><tex Notation="TeX">\$\_{2}\$</tex> </formula>MnSi <newline/>Heusler Alloy Thin Films Onto n-Si Substrates}, url = {http://dx.doi.org/10.1109/TMAG.2009.2024320}, volume = {45}, year = {2009} }

TY - JOUR ID - citeulike:5909707 L3 - citeulike-article-id:5909707 N2 - <para> The structural, magnetic and electrical properties of Co<formula formulatype="inline"> <tex Notation="TeX">$_{2}$</tex></formula>MnSi thin films grown onto n-doped Si(110) and n-Si(100) substrates were studied. The structure and magnetic properties of Co<formula formulatype="inline"><tex Notation="TeX">$_{2}$</tex> </formula>MnSi thin films were found to depend strongly on the annealing temperature <formula formulatype="inline"><tex Notation="TeX">$(T_{rm A})$</tex></formula>. At <formula formulatype="inline"><tex Notation="TeX">$T_{rm A} =275hbox{--}350^{circ}$</tex> </formula>C, the Co<formula formulatype="inline"><tex Notation="TeX">$_{2}$</tex> </formula>MnSi films were of B2 phase with <formula formulatype="inline"> <tex Notation="TeX">$langle 100rangle$</tex></formula> texture and possessed magnetic moment on both substrates. The saturation magnetization <formula formulatype="inline"><tex Notation="TeX">$(M_{rm S})$</tex></formula> of Co<formula formulatype="inline"><tex Notation="TeX">$_{2}$</tex></formula>MnSi thin films was found maximum at <formula formulatype="inline"><tex Notation="TeX">$T_{rm A} =300^{circ}$</tex></formula>C. Chemical reaction might occur between Co<formula formulatype="inline"><tex Notation="TeX">$_{2}$</tex></formula>MnSi and Si above <formula formulatype="inline"><tex Notation="TeX">$T_{rm A} =350^{circ}$</tex> </formula>C which caused nearly zero <formula formulatype="inline"><tex Notation="TeX">$M_{rm S}$</tex></formula> value. The current-voltage (<formula formulatype="inline"> <tex Notation="TeX">$I$</tex></formula>-<formula formulatype="inline"><tex Notation="TeX">$V$</tex></formula>) characteristic of the Co<formula formulatype="inline"> <tex Notation="TeX">$_{2}$</tex></formula>MnSi thin films onto n-Si substrates was obtained linear suggesting the contacts were ohmic nature. </para> IS - 10 JF - Magnetics, IEEE Transactions on EP - 4032 TI - Study of Structure, Magnetic and Electrical Properties of Co<formula formulatype="inline"><tex Notation="TeX">$_{2}$</tex> </formula>MnSi <newline/>Heusler Alloy Thin Films Onto n-Si Substrates VL - 45 SP - 4030 KW - cms KW - heusler KW - si KW - spininjection AU - Nahid, MAI AU - Oogane, M AU - Naganuma, H AU - Ando, Y PY - 2009/09/22/ UR - http://dx.doi.org/10.1109/TMAG.2009.2024320 ER -