A compact refractometric sensor based on grated silicon photonic wires Export

@article{citeulike:4901685, abstract = {Grated silicon photonic wires for refractometric applications have been fabricated using a 248-nm deep UV lithography. It is shown experimentally, that a device with length of only 180 μm has an index sensitivity of 10 −6 assuming a detector power resolution of 1\%. It is also demonstrated that the device is suitable to monitor index changes in a liquid cladding, which could be used to monitor on chip chemical reactions.}, author = {Kauppinen, L. J. and Hoekstra, H. J. W. M. and de Ridder, R. M.}, citeulike-article-id = {4901685}, citeulike-linkout-0 = {http://dx.doi.org/10.1016/j.snb.2008.12.023}, citeulike-linkout-1 = {http://linkinghub.elsevier.com/retrieve/pii/S0925400508008228}, doi = {10.1016/j.snb.2008.12.023}, issn = {09254005}, journal = {Sensors and Actuators B: Chemical}, keywords = {experiment, grating, refractive\_index, sensor, silicon, silicon\_oxide, waveguide}, month = {May}, number = {1}, pages = {194--198}, posted-at = {2009-06-19 09:24:47}, priority = {2}, title = {A compact refractometric sensor based on grated silicon photonic wires}, url = {http://dx.doi.org/10.1016/j.snb.2008.12.023}, volume = {139}, year = {2009} }

TY - JOUR ID - citeulike:4901685 L3 - citeulike-article-id:4901685 N2 - Grated silicon photonic wires for refractometric applications have been fabricated using a 248-nm deep UV lithography. It is shown experimentally, that a device with length of only 180 μm has an index sensitivity of 10 −6 assuming a detector power resolution of 1%. It is also demonstrated that the device is suitable to monitor index changes in a liquid cladding, which could be used to monitor on chip chemical reactions. IS - 1 JF - Sensors and Actuators B: Chemical SN - 09254005 EP - 198 TI - A compact refractometric sensor based on grated silicon photonic wires VL - 139 SP - 194 KW - experiment KW - grating KW - refractive_index KW - sensor KW - silicon KW - silicon_oxide KW - waveguide AU - Kauppinen, LJ AU - Hoekstra, HJWM AU - de Ridder, RM PY - 2009/05/20/ UR - http://dx.doi.org/10.1016/j.snb.2008.12.023 ER -