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Low-temperature electron-spin relaxation is studied by the optical orientation method in bulk n-GaAs with donor concentrations from 1014cm-3 to 5×1017cm-3. A peculiarity related to the metal-to-insulator transition is observed in the dependence of the spin lifetime on doping near nD=2×1016cm-3. In the metallic phase, spin relaxation is governed by the Dyakonov-Perel mechanism, while in the insulator phase it is due to anisotropic exchange interaction and hyperfine interaction
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