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mllee's gaasn [32 articles]

Recent papers added to mllee's library classified by the tag gaasn. You can also see everyone's gaasn.
  • Bismuth surfactant effects for GaAsN and beryllium doping of GaAsN and GaInAsN grown by molecular beam epitaxy
    Journal of Crystal Growth, Vol. 304, No. 2. (15 June 2007), pp. 402-406.
    by Ting Liu, Sandeep Chandril, AJ Ptak, D Korakakis, TH Myers
    posted to surfactant mbe gaasn bismuth by mllee on 2008-07-25 15:39:56 as **
  • Effect of hydrogen incorporation temperature in [bold in plane]-engineered GaAsN/GaAsN:H heterostructures
    Applied Physics Letters, Vol. 92, No. 22. (2008)
    by R Trotta, A Polimeni, M Capizzi, D Giubertoni, M Bersani, G Bisognin, M Berti, S Rubini, F Martelli, L Mariucci, M Francardi, A Gerardino
    posted to h_implantation gaasn by mllee on 2008-06-03 11:35:09 as **
  • Comparison of a dominant electron trap in n-type and p-type GaNAs using deep-level transient spectroscopy
    Vol. 24, No. 4. (2006), pp. 1252-1257.
    by SW Johnston, SR Kurtz
    posted to dlts gaasn ingaasn photovoltaic solar by mllee on 2008-03-21 18:11:01 as **
  • Strain relaxation of GaN[sub x]As[sub 1 - x] on GaAs (001) grown by molecular-beam epitaxy
    Journal of Applied Physics, Vol. 86, No. 9. (1999), pp. 5302-5304.
    by Z Pan, YT Wang, LH Li, H Wang, Z Wei, ZQ Zhou, YW Lin
    posted to gaasn mbe strainrelaxation by mllee on 2008-03-13 20:14:47 as **
  • notes Compositional Correlation and Anticorrelation in Quaternary Alloys: Competition Between Bulk Thermodynamics and Surface Kinetics
    Physical Review Letters, Vol. 99, No. 20. (2007)
    by M Albrecht, Abu H Farsakh, T Remmele, L Geelhaar, H Riechert, J Neugebauer
    posted to firstprinciples gaasn ingaasn phaseseparation tem by mllee on 2008-03-02 20:56:10 as **
  • Rapid thermal annealing in GaN[sub x]As[sub 1 - x]/GaAs structures: Effect of nitrogen reorganization on optical properties
    Journal of Applied Physics, Vol. 91, No. 9. (2002), pp. 5902-5908.
    by L Grenouillet, Bru C Chevallier, G Guillot, P Gilet, P Ballet, P Duvaut, G Rolland, A Million
    posted to gaasn mbe phaseseparation by mllee on 2008-03-02 15:08:25 as **
  • notes Growth and structural characterization of III–N–V semiconductor alloys
    Semiconductor Science and Technology, Vol. 17, No. 8., 755.
    by Ikuo Suemune, Katsuhiro Uesugi, Tae-Yeon Seong
    posted to gaasn phaseseparation tem by mllee on 2008-01-30 02:18:10 as **
  • Band Anticrossing in GaInNAs Alloys
    Physical Review Letters, Vol. 82, No. 6. (February 1999), 1221.
    by W Shan, W Walukiewicz, JW Ager, EE Haller, JF Geisz, DJ Friedman, JM Olson, SR Kurtz
    posted to aro bac bandgap gaasn highlycited ingaasn by mllee on 2008-01-26 14:56:01 as **
  • Influence of N on the electronic properties of GaAsN alloy films and heterostructures
    Journal of Applied Physics, Vol. 102, No. 10. (2007)
    by M Reason, Y Jin, HA Mckay, N Mangan, D Mao, RS Goldman, X Bai, C Kurdak
    posted to defectcomplexes gaasn gatevalve mobility by mllee on 2008-01-23 22:21:33 as **
  • First-principles calculations of the mechanical and structural properties of GaN[sub x]As[sub 1 - x]: Lattice and elastic constants
    Physical Review B (Condensed Matter and Materials Physics), Vol. 76, No. 3. (2007)
    by G Stenuit, S Fahy
    posted to firstprinciples gaasn latticeconstant by mllee on 2008-01-23 21:33:42 as **
  • The microstructural influence of nitrogen incorporation in dilute nitride semiconductors
    Journal of Physics: Condensed Matter, Vol. 16, No. 31. (2004), pp. S3161-S3170.
    by PR Chalker, TJ Bullough, M Gass, S Thomas, TB Joyce
    posted to gaasn ingaasn mbe stackingfaults tem by mllee on 2008-01-23 19:11:41 as **
  • TEM studies of stress relaxation in GaAsN and GaP thin films.
    Philosophical Magazine;, Vol. 35, No. 26/27. (2005), pp. 3073-3090.
    by Y Li, GC Weatherly, M Niewczas
    posted to cracks gaasn tem by mllee on 2008-01-23 18:58:05 as **
  • notes Stress evolution in GaAsN alloy films
    Journal of Applied Physics, Vol. 97, No. 10. (2005)
    by M Reason, X Weng, W Ye, D Dettling, S Hanson, G Obeidi, RS Goldman
    posted to gaasn tem by mllee on 2008-01-22 02:09:47 as **
  • Evolution of structural properties and formation of N-N split interstitials in GaAs[sub 1 - x]N[sub x] alloys
    Physical Review B (Condensed Matter and Materials Physics), Vol. 71, No. 16. (2005)
    by Pierre Carrier, Su H Wei, SB Zhang, Sarah Kurtz
    posted to defectcomplexes firstprinciples gaasn interstitials by mllee on 2008-01-22 01:40:33 as **
  • Nitrogen incorporation in GaNAs layers grown by molecular beam epitaxy
    Applied Physics Letters, Vol. 89, No. 3. (2006)
    by QX Zhao, SM Wang, M Sadeghi, A Larsson, M Friesel, M Willander
    posted to anneal gaasn mbe pl sims xrd by mllee on 2008-01-22 01:23:04 as **
  • Nitrogen incorporation in group III-nitride-arsenide materials grown by elemental source molecular beam epitaxy
    Journal of Crystal Growth, Vol. 227-228 (July 2001), pp. 506-515.
    by SG Spruytte, MC Larson, W Wampler, CW Coldren, HE Petersen, JS Harris
    posted to anneal gaasn ingaasn mbe sims by mllee on 2008-01-22 01:18:54 as **
  • notes Nitrogen Solubility and Induced Defect Complexes in Epitaxial GaAs:N
    Physical Review Letters, Vol. 86, No. 9. (26 February 2001), 1789.
    by SB Zhang, Su-Huai Wei
    posted to defectcomplexes firstprinciples gaasn pointdefect by mllee on 2008-01-22 01:11:36 as **
  • Concentration of interstitial and substitutional nitrogen in GaN[sub x]As[sub 1 - x]
    Applied Physics Letters, Vol. 80, No. 13. (2002), pp. 2314-2316.
    by T Ahlgren, Vainonen E Ahlgren, J Likonen, W Li, M Pessa
    posted to gaasn interstitials mbe pointdefect rbs by mllee on 2008-01-22 00:06:53 as **
  • Mechanisms of nitrogen incorporation in GaAsN alloys
    Applied Physics Letters, Vol. 85, No. 10. (2004), pp. 1692-1694.
    by M Reason, HA Mckay, W Ye, S Hanson, RS Goldman, V Rotberg
    posted to gaasn interstitials pointdefect by mllee on 2008-01-21 01:16:37 as ****
  • notes Nitrogen-related electron traps in Ga(As,N) layers (<= 3% N)
    Journal of Applied Physics, Vol. 93, No. 10. (2003), pp. 6095-6099.
    by P Krispin, V Gambin, JS Harris, KH Ploog
    posted to dlts gaasn interstitials pointdefect by mllee on 2008-01-21 01:14:55 as **
  • Mutual passivation of electrically active and isovalent impurities
    Nat Mater, Vol. 1, No. 3. (November 2002), pp. 185-189.
    by KM Yu, W Walukiewicz, J Wu, DE Mars, DR Chamberlin, MA Scarpulla, OD Dubon, JF Geisz
    posted to defects gaasn pointdefect by mllee on 2008-01-18 22:28:05 as **
  • notes Tensile-strained GaAsN quantum dots on InP
    Applied Physics Letters, Vol. 90, No. 17. (2007)
    by P Pohjola, T Hakkarainen, H Koskenvaara, M Sopanen, H Lipsanen, J Sainio
    posted to gaasn quantumdot by mllee on 2008-01-18 13:50:28 as **
  • Chemical beam epitaxy of GaAsN/GaAs multiquantum well solar cell
    Vol. 25, No. 3. (2007), pp. 987-990.
    by A Freundlich, A Fotkatzikis, L Bhusal, L Williams, A Alemu, W Zhu, JAH Coaquira, A Feltrin, G Radhakrishnan
    posted to gaasn photovoltaic solar by mllee on 2008-01-17 21:07:51 as ***
  • Point defects in dilute nitride III-N-As and III-N-P
    Physica B: Condensed Matter, Vol. 376-377 (1 April 2006), pp. 545-551.
    by WM Chen, IA Buyanova, CW Tu, H Yonezu
    posted to defects gaasn by mllee on 2008-01-17 15:17:52 as **
  • III–N–V semiconductors for solar photovoltaic applications
    Semiconductor Science and Technology, Vol. 17, No. 8. (2002), pp. 769-777.
    by JF Geisz, DJ Friedman
    posted to gaasn photovoltaic solar by mllee on 2008-01-17 15:02:07 as ****
  • Transport properties of GaAs[sub 1 - x]N[sub x] thin films grown by metalorganic chemical vapor deposition
    Applied Physics Letters, Vol. 77, No. 23. (2000), pp. 3794-3796.
    by RK Ahrenkiel, SW Johnston, BM Keyes, DJ Friedman, SM Vernon
    posted to clusters gaasn by mllee on 2008-01-17 14:59:10 as **
  • Theory of electronic structure evolution in GaAsN and GaPN alloys
    Physical Review B, Vol. 64, No. 11. (2001), 115208.
    by PRC Kent, Alex Zunger
    posted to firstprinciples gaasn theory by mllee on 2008-01-17 14:21:35 as **
  • Red Shift of Photoluminescence and Absorption in Dilute GaAsN Alloy Layers
    Japanese Journal of Applied Physics, Vol. 31, No. 7A. (July 1992), pp. L853-L855.
    by Markus Weyers, Michio Sato, Hiroaki Ando
    posted to gaasn by mllee on 2008-01-17 14:14:40 as **
  • Electronic structure and phase stability of GaAs_1-xN_x alloys
    Physical Review B, Vol. 51 (15 April 1995), 10568.
    by Jörg Neugebauer, Chris G Van de Walle
    posted to gaasn by mllee on 2008-01-16 22:52:53 as **
  • Solubility of nitrogen in binary III-V systems
    Journal of Crystal Growth, Vol. 178, No. 1-2. (2 June 1997), pp. 1-7.
    by I-Hsiu Ho, GB Stringfellow
    posted to gaasn ingaasn solubility by mllee on 2008-01-16 21:04:45 as **
  • Incorporation of nitrogen in nitride-arsenides: Origin of improved luminescence efficiency after anneal
    Journal of Applied Physics, Vol. 89, No. 8. (2001), pp. 4401-4406.
    by Sylvia G Spruytte, Christopher W Coldren, James S Harris, William Wampler, Peter Krispin, Klaus Ploog, Michael C Larson
    posted to anneal gaasn mbe pl pointdefect by mllee on 2008-01-16 20:38:25 as ****
  • Annealing effects on the nanoscale indium and nitrogen distribution in Ga(NAs) and (GaIn)(NAs) quantum wells
    Journal of Applied Physics, Vol. 102, No. 8. (2007)
    by K Volz, T Torunski, O Rubel, W Stolz, P Kruse, D Gerthsen, M Schowalter, A Rosenauer
    posted to anneal gaasn ingaasn pointdefect qw by mllee on 2008-01-16 20:33:47 as **
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