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mllee's ingaasn [35 articles]

Recent papers added to mllee's library classified by the tag ingaasn. You can also see everyone's ingaasn.
  • Effects of bismuth on wide-depletion-width GaInNAs solar cells
    25th North American Molecular Beam Epitaxy Conference (NAMBE), Vol. 26, No. 3. (2008), pp. 1053-1057.
    by AJ Ptak, R France, CS Jiang, RC Reedy
    posted to surfactant solar photovoltaic mbe ingaasn bismuth by mllee on 2008-07-25 15:40:45 as **
  • Nitrogen-induced intermixing of InAsN quantum dots with the GaAs matrix
    Applied Physics Letters, Vol. 92, No. 20. (2008)
    by L Ivanova, H Eisele, A Lenz, R Timm, M Dähne, O Schumann, L Geelhaar, H Riechert
    posted to stm quantumdot ingaasn by mllee on 2008-05-20 02:02:46 as **
  • Comparison of a dominant electron trap in n-type and p-type GaNAs using deep-level transient spectroscopy
    Vol. 24, No. 4. (2006), pp. 1252-1257.
    by SW Johnston, SR Kurtz
    posted to dlts gaasn ingaasn photovoltaic solar by mllee on 2008-03-21 18:11:01 as **
  • Nitrogen-induced hindering of In incorporation in InGaAsN
    Applied Physics Letters, Vol. 88, No. 14. (2006)
    by S Rubini, G Bais, A Cristofoli, M Piccin, R Duca, C Nacci, S Modesti, E Carlino, F Martelli, A Franciosi, G Bisognin, D De Salvador, P Schiavuta, M Berti, AV Drigo
    posted to ingaasn innanticorrelation mbe phaseseparation by mllee on 2008-03-13 21:01:11 as ***
  • Comparison of strain relaxation in InGaAsN and InGaAs thin films
    Applied Physics Letters, Vol. 80, No. 23. (2002), pp. 4357-4359.
    by M Adamcyk, JH Schmid, T Tiedje, A Koveshnikov, A Chahboun, V Fink, KL Kavanagh
    posted to ingaasn mbe moss strainrelaxation by mllee on 2008-03-13 20:10:41 as **
  • notes Compositional Correlation and Anticorrelation in Quaternary Alloys: Competition Between Bulk Thermodynamics and Surface Kinetics
    Physical Review Letters, Vol. 99, No. 20. (2007)
    by M Albrecht, Abu H Farsakh, T Remmele, L Geelhaar, H Riechert, J Neugebauer
    posted to firstprinciples gaasn ingaasn phaseseparation tem by mllee on 2008-03-02 20:56:10 as **
  • notes Simultaneous experimental evaluation of In and N concentrations in InGaAsN quantum wells
    Journal of Applied Physics, Vol. 90, No. 8. (2001), pp. 3792-3798.
    by V Grillo, M Albrecht, T Remmele, HP Strunk, Yu, H Riechert
    posted to ingaasn phaseseparation tem by mllee on 2008-03-02 20:30:55 as **
  • Influence of N incorporation on In content in GaInNAs/GaNAs quantum wells grown by plasma-assisted molecular beam epitaxy
    Applied Physics Letters, Vol. 89, No. 7. (2006)
    by HF Liu, N Xiang, SJ Chua
    posted to ingaasn innanticorrelation mbe phaseseparation rheed by mllee on 2008-03-02 14:42:46 as **
  • Origin of improved luminescence efficiency after annealing of Ga(In)NAs materials grown by molecular-beam epitaxy
    Applied Physics Letters, Vol. 79, No. 8. (2001), pp. 1094-1096.
    by Wei Li, Markus Pessa, Tommy Ahlgren, James Decker
    posted to ingaasn interstitials phaseseparation pointdefects vacancies by mllee on 2008-03-02 04:07:24 as **
  • Vertical composition fluctuations in (Ga,In)(N,As) quantum wells grown on vicinal (1 1 1)B GaAs
    Journal of Physics and Chemistry of Solids, Vol. 69, No. 2-3. ( 2008), pp. 343-346.
    by E Luna, A Trampert, J Miguel-Sanchez, A Guzman, KH Ploog
    posted to 111b ingaasn phaseseparation tem by mllee on 2008-03-02 04:05:33 as ****
  • Composition fluctuations and clustering in (Ga,In)(N,As)/GaAs(0 0 1) heterostructures studied by analytical transmission electron microscopy
    Journal of Physics and Chemistry of Solids, Vol. 69, No. 2-3. ( 2008), pp. 335-342.
    by X Kong, A Trampert, KH Ploog
    posted to ingaasn phaseseparation tem by mllee on 2008-03-02 04:02:31 as **
  • Composition fluctuations in dilute nitride (Ga,In)(N,As)/GaAs heterostructures measured by low-loss electron energy-loss spectroscopy
    Micron, Vol. 37, No. 5. (July 2006), pp. 465-472.
    by X Kong, A Trampert, KH Ploog
    posted to ingaasn phaseseparation tem by mllee on 2008-03-02 03:51:29 as **
  • Development of 1.25 eV InGaAsN for triple junction solar cells
    Photovoltaic Specialists Conference, 2000. Conference Record of the Twenty-Eighth IEEE (2000), pp. 986-989.
    by NY Li, PR Sharps, M Stan, F Newman, JS Hills, HQ Hou, JM Gee, DJ Aiken
    posted to 125ev ingaasn photovoltaic solar by mllee on 2008-02-29 22:15:56 as **
  • Use of transmission electron microscopy in the characterization of GaInNAs(Sb) quantum well structures grown by molecular beam epitaxy
    Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 22, No. 3. (2004), pp. 1588-1592.
    by Tihomir Gugov, Vincent Gambin, Mark Wistey, Homan Yuen, Seth Bank, Jr
    posted to gainnassb ingaasn phaseseparation tem by mllee on 2008-01-30 01:39:48 as **
  • Nitrogen-enhanced indium segregation in (Ga,In)(N,As)/GaAs multiple quantum wells grown by molecular-beam epitaxy
    New Journal of Physics, Vol. 9, No. 11., 405.
    by E Luna, A Trampert, EM Pavelescu, M Pessa
    posted to ingaasn laser phaseseparation tem by mllee on 2008-01-29 22:31:27 as **
  • Decomposition in as-grown (Ga,In)(N,As) quantum wells
    Applied Physics Letters, Vol. 87, No. 17. (2005)
    by X Kong, A Trampert, E Tournié, KH Ploog
    posted to ingaasn laser phaseseparation strain by mllee on 2008-01-29 22:23:03 as ***
  • Band Anticrossing in GaInNAs Alloys
    Physical Review Letters, Vol. 82, No. 6. (February 1999), 1221.
    by W Shan, W Walukiewicz, JW Ager, EE Haller, JF Geisz, DJ Friedman, JM Olson, SR Kurtz
    posted to aro bac bandgap gaasn highlycited ingaasn by mllee on 2008-01-26 14:56:01 as **
  • Breakeven criteria for the GaInNAs junction in GaInP/GaAs/GaInNAs/Ge four-junction solar cells
    Progress in Photovoltaics: Research and Applications, Vol. 10, No. 5. (2002), pp. 331-344.
    by DJ Friedman, Sarah R Kurtz
    posted to ingaasn nrel photovoltaic solar by mllee on 2008-01-24 01:43:50 as ****
  • notes GaInNAs: a novel material for long-wavelength semiconductor lasers
    Selected Topics in Quantum Electronics, IEEE Journal of, Vol. 3, No. 3. (1997), pp. 719-730.
    by M Kondow, T Kitatani, S Nakatsuka, MC Larson, K Nakahara, Y Yazawa, M Okai, K Uomi
    posted to ingaasn review by mllee on 2008-01-23 22:01:21 as **
  • InGaAsN solar cells with 1.0 eV band gap, lattice matched to GaAs
    Applied Physics Letters, Vol. 74, No. 5. (1999), pp. 729-731.
    by Steven R Kurtz, AA Allerman, ED Jones, JM Gee, JJ Banas, BE Hammons
    posted to ingaasn photovoltaic solar by mllee on 2008-01-23 21:53:27 as **
  • notes Structure, morphology, and optical properties of Ga[sub x]In[sub 1 - x]N[sub 0.05]As[sub 0.95] quantum wells: Influence of the growth mechanism
    Physical Review B (Condensed Matter and Materials Physics), Vol. 76, No. 8. (2007)
    by WM Mcgee, RS Williams, MJ Ashwin, TS Jones, E Clarke, J Zhang, S Tomic
    posted to ingaasn mbe phaseseparation spinodaldecomposition by mllee on 2008-01-23 20:00:42 as **
  • The microstructural influence of nitrogen incorporation in dilute nitride semiconductors
    Journal of Physics: Condensed Matter, Vol. 16, No. 31. (2004), pp. S3161-S3170.
    by PR Chalker, TJ Bullough, M Gass, S Thomas, TB Joyce
    posted to gaasn ingaasn mbe stackingfaults tem by mllee on 2008-01-23 19:11:41 as **
  • Nitrogen incorporation in group III-nitride-arsenide materials grown by elemental source molecular beam epitaxy
    Journal of Crystal Growth, Vol. 227-228 (July 2001), pp. 506-515.
    by SG Spruytte, MC Larson, W Wampler, CW Coldren, HE Petersen, JS Harris
    posted to anneal gaasn ingaasn mbe sims by mllee on 2008-01-22 01:18:54 as **
  • Deep-level defects in InGaAsN grown by molecular-beam epitaxy
    Applied Physics Letters, Vol. 80, No. 25. (2002), pp. 4777-4779.
    by RJ Kaplar, SA Ringel, Steven R Kurtz, JF Klem, AA Allerman
    posted to dlts ingaasn mbe pointdefect by mllee on 2008-01-21 01:11:20 as **
  • notes Effects of temperature, nitrogen ions, and antimony on wide depletion width GaInNAs
    Vol. 25, No. 3. (2007), pp. 955-959.
    by AJ Ptak, DJ Friedman, Sarah Kurtz
    posted to gainnassb ingaasn photovoltaic solar by mllee on 2008-01-18 23:22:46 as **
  • Low-acceptor-concentration GaInNAs grown by molecular-beam epitaxy for high-current p-i-n solar cell applications
    Journal of Applied Physics, Vol. 98, No. 9. (2005)
    by AJ Ptak, DJ Friedman, Sarah Kurtz, RC Reedy
    posted to ingaasn mbe photovoltaic solar by mllee on 2008-01-18 23:05:31 as ****
  • Nitrogen-enhanced indium segregation in (Ga,In)(N,As)/GaAs multiple quantum wells grown by molecular-beam epitaxy
    New J. Phys., Vol. 9, No. 11. (November 2007), 405.
    by E Luna, A Trampert, EM Pavelescu, M Pessa
    posted to ingaasn tem by mllee on 2008-01-17 22:53:07 as **
  • Critical parameters for the molecular beam epitaxial growth of 1.55 mu m (Ga,In)(N,As) multiple quantum wells
    Applied Physics Letters, Vol. 89, No. 18. (2006)
    by Fumitaro Ishikawa, Esperanza Luna, Achim Trampert, Klaus H Ploog
    posted to defects ingaasn pl tem by mllee on 2008-01-17 22:48:40 as ***
  • 1-eV solar cells with GaInNAs active layer
    Journal of Crystal Growth, Vol. 195, No. 1-4. (15 December 1998), pp. 409-415.
    by DJ Friedman, JF Geisz, SR Kurtz, JM Olson
    posted to ingaasn photovoltaic solar by mllee on 2008-01-17 15:36:07 as **
  • Capacitance-spectroscopy identification of a key defect in N-degraded GalnNAs solar cells
    Applied Physics Letters, Vol. 86, No. 11. (2005)
    by Sarah Kurtz, Steve Johnston, Howard M Branz
    posted to defects dlts ingaasn by mllee on 2008-01-17 15:25:37 as ***
  • Material Development for Improved 1 eV (GaIn)(NAs) Solar Cell Structures
    Journal of Solar Energy Engineering, Vol. 129, No. 3. (2007), pp. 266-271.
    by K Volz, T Torunski, D Lackner, O Rubel, W Stolz, C Baur, S Müller, F Dimroth, AW Bett
    posted to ingaasn photovoltaic solar tem by mllee on 2008-01-17 15:24:42 as ***
  • GaInNAs: A Novel Material for Long-Wavelength-Range Laser Diodes with Excellent High-Temperature Performance
    Japanese Journal of Applied Physics, Vol. 35 (1996), pp. 1273-1275.
    by Masahiko Kondow, Kazuhisa Uomi, Atsuko Niwa, Takeshi Kitatani, Seiji Watahiki, Yoshiaki Yazawa1
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  • Recent Progress on 1.55-<formula formulatype="inline"> <tex>$muhbox m$</tex></formula> Dilute-Nitride Lasers
    Quantum Electronics, IEEE Journal of, Vol. 43, No. 9. (2007), pp. 773-785.
    by SR Bank, Hopil Bae, LL Goddard, HB Yuen, MA Wistey, R Kudrawiec, JS Harris
    posted to ingaasn lasers mbe by mllee on 2008-01-16 22:26:40 as ****
  • Solubility of nitrogen in binary III-V systems
    Journal of Crystal Growth, Vol. 178, No. 1-2. (2 June 1997), pp. 1-7.
    by I-Hsiu Ho, GB Stringfellow
    posted to gaasn ingaasn solubility by mllee on 2008-01-16 21:04:45 as **
  • Annealing effects on the nanoscale indium and nitrogen distribution in Ga(NAs) and (GaIn)(NAs) quantum wells
    Journal of Applied Physics, Vol. 102, No. 8. (2007)
    by K Volz, T Torunski, O Rubel, W Stolz, P Kruse, D Gerthsen, M Schowalter, A Rosenauer
    posted to anneal gaasn ingaasn pointdefect qw by mllee on 2008-01-16 20:33:47 as **
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