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mllee's metamorphic [20 articles]

Recent papers added to mllee's library classified by the tag metamorphic. You can also see everyone's metamorphic.
  • Surfactant effects associated with Te-doped InPAs alloys
    Applied Physics Letters, Vol. 91, No. 20. (2007)
    by JG Cederberg, SR Lee
    posted to metamorphic inasp gradedbuffer doping by mllee on 2008-07-09 20:12:28 as **
  • Growth of low-defect density In[sub 0.25]Ga[sub 0.75]As on GaAs by molecular beam epitaxy
    Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 18, No. 6. (2000), pp. 2611-2614.
    by GW Pickrell, KL Chang, JH Epple, KY Cheng, KC Hsieh
    posted to metamorphic mbe ingaas by mllee on 2008-06-12 20:24:35 as **
  • 25.5% efficient Ga<sub>0.35</sub>In<sub>0.65</sub>P/Ga<sub>0.83 </sub>In<sub>0.17</sub>As tandem solar cells grown on GaAs substrates
    Electron Device Letters, IEEE, Vol. 21, No. 5. (2000), pp. 209-211.
    by F Dimroth, U Schubert, AW Bett
    posted to solar photovoltaic mocvd metamorphic ingaas by mllee on 2008-06-09 22:39:27 as **
  • Comprehensive Characterization of In[sub 0.45]Al[sub 0.55]As/In[sub 0.5]Ga[sub 0.5]As/In[sub x]Al[sub 1 - x]As Metamorphic High-Electron-Mobility Transistors on GaAs Substrates
    Journal of The Electrochemical Society, Vol. 153, No. 12. (2006), pp. G1005-G1010.
    by Yu S Lin, Bo Y Chen
    posted to metamorphic mbe inalas by mllee on 2008-06-09 22:36:26 as **
  • Graded In[sub x]Ga[sub 1 - x]As/GaAs 1.3 mu m wavelength light emitting diode structures grown with molecular beam epitaxy
    Journal of Applied Physics, Vol. 83, No. 1. (1998), pp. 592-599.
    by MT Bulsara, V Yang, A Thilderkvist, EA Fitzgerald, K Haüsler, K Eberl
    posted to metamorphic mbe ingaas by mllee on 2008-06-09 21:31:57 as **
  • Growth and characterization of metamorphic In[sub x](AlGa)[sub 1 - x]As/In[sub x]Ga[sub 1 - x]As high electron mobility transistor material and devices with X = 0.3--0.4
    Papers from the 18th north american conference on molecular beam epitaxy, Vol. 18, No. 3. (2000), pp. 1638-1641.
    by WE Hoke, PS Lyman, CS Whelan, JJ Mosca, A Torabi, KL Chang, KC Hsieh
    posted to metamorphic mbe ingaas inalas by mllee on 2008-06-09 19:05:25 as **
  • Properties of metamorphic materials and device structures on GaAs substrates
    Journal of Crystal Growth, Vol. 251, No. 1-4. (April 2003), pp. 804-810.
    by WE Hoke, TD Kennedy, A Torabi, CS Whelan, PF Marsh, RE Leoni, SM Lardizabal, Y Zhang, JH Jang, I Adesida, C Xu, KC Hsieh
    posted to metamorphic mbe ingaas inalas by mllee on 2008-06-09 18:57:31 as **
  • Molecular beam epitaxial growth and device performance of metamorphic high electron mobility transistor structures fabricated on GaAs substrates
    Papers from the seventeenth north american molecular beam epitaxy conference, Vol. 17, No. 3. (1999), pp. 1131-1135.
    by WE Hoke, PJ Lemonias, JJ Mosca, PS Lyman, A Torabi, PF Marsh, RA Mctaggart, SM Lardizabal, K Hetzler
    posted to metamorphic mbe ingaas inalas by mllee on 2008-06-09 18:32:48 as **
  • MBE-grown metamorphic lasers for applications at telecom wavelengths
    Journal of Crystal Growth, Vol. 301-302 (April 2007), pp. 914-922.
    by NN Ledentsov, VA Shchukin, T Kettler, K Posilovic, D Bimberg, Karachinsky, Gladyshev, MV Maximov, II Novikov, Yu Shernyakov, AE Zhukov, VM Ustinov, AR Kovsh
    posted to quantumdot metamorphic laser ingaas by mllee on 2008-06-09 17:25:46 as **
  • Molecular beam epitaxial growth and characteristics of 1.52 mu m metamorphic InAs quantum dot lasers on GaAs
    Vol. 26, No. 3. (2008), pp. 1153-1156.
    by Z Mi, C Wu, J Yang, P Bhattacharya
    posted to metamorphic mbe laser ingaas anneal by mllee on 2008-06-09 17:13:50 as **
  • Strong 1.3--1.6 mu m light emission from metamorphic InGaAs quantum wells on GaAs
    Applied Physics Letters, Vol. 86, No. 17. (2005)
    by T\aa I Ngring, SM Wang, QF Gu, YQ Wei, M Sadeghi, A Larsson, QX Zhao, MN Akram, J Berggren
    posted to metamorphic mbe ingaas by mllee on 2008-06-09 17:06:47 as **
  • Metamorphic growth of 1.25-1.29 [mu]m InGaAs quantum well lasers on GaAs by molecular beam epitaxy
    Journal of Crystal Growth, Vol. 301-302 (April 2007), pp. 971-974.
    by I Tångring, SM Wang, M Sadeghi, A Larsson, XD Wang
    posted to metamorphic mbe laser ingaas by mllee on 2008-06-09 17:03:08 as **
  • 1.55 mu m InAs quantum dots grown on a GaAs substrate using a GaAsSb metamorphic buffer layer
    Applied Physics Letters, Vol. 92, No. 11. (2008)
    by HY Liu, Y Qiu, CY Jin, T Walther, AG Cullis
    posted to quantumdot metamorphic mbe laser inas gaassb by mllee on 2008-05-29 18:46:57 as **
  • Growth and characteristics of ultralow threshold 1.45 mu m metamorphic InAs tunnel injection quantum dot lasers on GaAs
    Applied Physics Letters, Vol. 89, No. 15. (2006)
    by Z Mi, P Bhattacharya, J Yang
    posted to quantumdot metamorphic mbe laser ingaas inas by mllee on 2008-05-29 18:44:38 as **
  • 1.59 mu m room temperature emission from metamorphic InAs/InGaAs quantum dots grown on GaAs substrates
    Applied Physics Letters, Vol. 92, No. 21. (2008)
    by L Seravalli, P Frigeri, G Trevisi, S Franchi
    posted to quantumdot metamorphic laser ingaas inas by mllee on 2008-05-29 18:35:14 as **
  • Tilt generation in step-graded In[sub x]Ga[sub 1 - x]As metamorphic pseudosubstrate on a singular GaAs substrate using a low-temperature grown InGaP interlayer
    Journal of Applied Physics, Vol. 103, No. 10. (2008)
    by Shahram G Tavakoli, Oksana Hulko, David A Thompson
    posted to xrd metamorphic mbe ingaas by mllee on 2008-05-28 01:44:03 as **
  • Metamorphic AlInAs/GaInAs HEMTs on GaAs Substrates by MOCVD
    Electron Device Letters, IEEE, Vol. 29, No. 6. (2008), pp. 561-564.
    by H Li, CW Tang, KM Lau
    posted to metamorphic ingaas inalas by mllee on 2008-05-26 20:29:24 as **
  • Multijunction III-V solar cells: recent and projected results
    Photovoltaic Specialists Conference, 1988., Conference Record of the Twentieth IEEE (1988), pp. 48-54 vol.1.
    by HF Macmillan, HC Hamaker, GF Virshup, JG Werthen
    posted to algaas ingaas metamorphic photovoltaic solar by mllee on 2008-02-25 18:32:41 as **
  • High-efficiency GaInP/GaAs/InGaAs triple-junction solar cells grown inverted with a metamorphic bottom junction
    Applied Physics Letters, Vol. 91, No. 2. (2007)
    by JF Geisz, Sarah Kurtz, MW Wanlass, JS Ward, A Duda, DJ Friedman, JM Olson, WE Mcmahon, TE Moriarty, JT Kiehl
    posted to ingaas metamorphic photovoltaic solar stateoftheart by mllee on 2008-01-24 01:24:08 as **
  • 40% efficient metamorphic GaInP/GaInAs/Ge multijunction solar cells
    Applied Physics Letters, Vol. 90, No. 18. (2007)
    by RR King, DC Law, KM Edmondson, CM Fetzer, GS Kinsey, H Yoon, RA Sherif, NH Karam
    posted to ingaas metamorphic multijunction photovoltaic solar stateoftheart by mllee on 2008-01-24 01:22:30 as ** along with 1 person kristgy
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