Radiation-Induced Soft Error Rates of Advanced CMOS Bulk Devices Export

@inproceedings{citeulike:1196528, abstract = {This work provides a comprehensive summary of radiation-induced soft error rate (SER) scaling trends of key CMOS bulk devices. Specifically we analyzed the SER per bit scaling trends of SRAMs, sequentials and static combinational logic. Our results show that for SRAMs the single-bit soft error rate continues to decrease whereas the multi-bit SER increases dramatically. While the total soft error rate of logic devices (sequentials and static combinational devices) has not changed significantly, a substantial increase in the susceptibility to alpha particles is observed. Finally, a novel methodology to extract one-dimensional cross sections of the collected charge distributions from measured multi-bit statistics is introduced}, author = {Seifert, N. and Slankard, P. and Kirsch, M. and Narasimham, B. and Zia, V. and Brookreson, C. and Vo, A. and Mitra, S. and Gill, B. and Maiz, J.}, booktitle = {Reliability Physics Symposium Proceedings, 2006. 44th Annual., IEEE International}, citeulike-article-id = {1196528}, citeulike-linkout-0 = {http://dx.doi.org/10.1109/RELPHY.2006.251220}, citeulike-linkout-1 = {http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=4017161}, doi = {10.1109/RELPHY.2006.251220}, journal = {Reliability Physics Symposium Proceedings, 2006. 44th Annual., IEEE International}, keywords = {importance--high, ser, shrinking, trend}, pages = {217--225}, posted-at = {2007-03-29 17:48:33}, priority = {5}, title = {Radiation-Induced Soft Error Rates of Advanced CMOS Bulk Devices}, url = {http://dx.doi.org/10.1109/RELPHY.2006.251220}, year = {2006} }

TY - CONF ID - citeulike:1196528 L3 - citeulike-article-id:1196528 N2 - This work provides a comprehensive summary of radiation-induced soft error rate (SER) scaling trends of key CMOS bulk devices. Specifically we analyzed the SER per bit scaling trends of SRAMs, sequentials and static combinational logic. Our results show that for SRAMs the single-bit soft error rate continues to decrease whereas the multi-bit SER increases dramatically. While the total soft error rate of logic devices (sequentials and static combinational devices) has not changed significantly, a substantial increase in the susceptibility to alpha particles is observed. Finally, a novel methodology to extract one-dimensional cross sections of the collected charge distributions from measured multi-bit statistics is introduced JF - Reliability Physics Symposium Proceedings, 2006. 44th Annual., IEEE International EP - 225 TI - Radiation-Induced Soft Error Rates of Advanced CMOS Bulk Devices T2 - Reliability Physics Symposium Proceedings, 2006. 44th Annual., IEEE International SP - 217 KW - importance--high KW - ser KW - shrinking KW - trend AU - Seifert, N AU - Slankard, P AU - Kirsch, M AU - Narasimham, B AU - Zia, V AU - Brookreson, C AU - Vo, A AU - Mitra, S AU - Gill, B AU - Maiz, J PY - 2006/// UR - http://dx.doi.org/10.1109/RELPHY.2006.251220 ER -