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Single event upset in avionicsby: A. Taber, E. Normand
Nuclear Science, IEEE Transactions on In Nuclear Science, IEEE Transactions on, Vol. 40, No. 2. (1993), pp. 120-126.
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AbstractData from military/experimental flights and laboratory testing indicate that typical non-radiation-hardened 64 K and 256 K static random access memories (SRAMs) can experience a significant soft upset rate at aircraft altitudes due to energetic neutrons created by cosmic ray interactions in the atmosphere. It is suggested that error detection and correction circuitry be considered for all avionics designs containing large amounts of semiconductor memory
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