Temperature effects on IGCT performance Export

@inproceedings{citeulike:1610727, abstract = {The integrated gate-commutated thyristor (IGCT) is an advanced semiconductor device for high frequency, high power applications. This work presents a detailed discussion of experimental dynamic characteristics of IGCTs at ambient temperatures ranging from -40/spl deg/C to 50/spl deg/C. A lumped-charge physics-based IGCT model with full temperature response is also developed in this work. A chopper circuit with an inductive load is employed to test the IGCT switching behavior both experimentally and by simulation. Comparison between the experimental and simulation results is made and discrepancies are discussed.}, author = {Wang, X. and Caiafa, A. and Hudgins, J. and Santi, E.}, booktitle = {Industry Applications Conference, 2003. 38th IAS Annual Meeting. Conference Record of the}, citeulike-article-id = {1610727}, citeulike-linkout-0 = {http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=1257663}, journal = {Industry Applications Conference, 2003. 38th IAS Annual Meeting. Conference Record of the}, keywords = {capacitor-lifetime, power-electronics}, pages = {1006--1011 vol.2}, posted-at = {2007-08-31 13:59:24}, priority = {2}, title = {Temperature effects on IGCT performance}, url = {http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=1257663}, volume = {2}, year = {2003} }

TY - CONF ID - citeulike:1610727 L3 - citeulike-article-id:1610727 N2 - The integrated gate-commutated thyristor (IGCT) is an advanced semiconductor device for high frequency, high power applications. This work presents a detailed discussion of experimental dynamic characteristics of IGCTs at ambient temperatures ranging from -40/spl deg/C to 50/spl deg/C. A lumped-charge physics-based IGCT model with full temperature response is also developed in this work. A chopper circuit with an inductive load is employed to test the IGCT switching behavior both experimentally and by simulation. Comparison between the experimental and simulation results is made and discrepancies are discussed. JF - Industry Applications Conference, 2003. 38th IAS Annual Meeting. Conference Record of the EP - 1011 vol.2 TI - Temperature effects on IGCT performance VL - 2 T2 - Industry Applications Conference, 2003. 38th IAS Annual Meeting. Conference Record of the SP - 1006 KW - capacitor-lifetime KW - power-electronics AU - Wang, X AU - Caiafa, A AU - Hudgins, J AU - Santi, E PY - 2003/// UR - http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=1257663 ER -