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New ultra high density EPROM and flash EEPROM with NAND structure cell

by: F. Masuoka, M. Momodomi, Y. Iwata, R. Shirota
In Electron Devices Meeting, 1987 International, Vol. 33 (1987), pp. 552-555, doi:10.1109/iedm.1987.191485  Key: citeulike:11526063

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Abstract

In order to realize ultra high density EPROM and Flash EEPROM, a NAND structure cell is proposed. This new structure is able to shrink cell size without scaling of device dimensions. The NAND structure cell realizes a cell as small as 6.43 µm


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