Realization of a High Mobility Dual-gated Graphene Field Effect Transistor with Al2O3 Dielectric Export

@article{citeulike:3909724, abstract = {We fabricate and characterize dual-gated graphene field-effect transistors (FETs) using Al2O3 as top-gate dielectric. We use a thin Al film as a nucleation layer to enable the atomic layer deposition of Al2O3. Our devices show mobility values of over 8,000 cm2/Vs at room temperature, a finding which indicates that the top-gate stack does not significantly increase the carrier scattering, and consequently degrade the device characteristics. We propose a device model to fit the experimental data using a single mobility value.}, archivePrefix = {arXiv}, author = {Kim, Seyoung and Nah, Junghyo and Jo, Insun and Shahrjerdi, Davood and Colombo, Luigi and Yao, Zhen and Tutuc, Emanuel and Banerjee, Sanjay K.}, citeulike-article-id = {3909724}, citeulike-linkout-0 = {http://arxiv.org/abs/0901.2901}, citeulike-linkout-1 = {http://arxiv.org/pdf/0901.2901}, day = {12}, eprint = {0901.2901}, keywords = {disorder, edges, graphene}, month = {Sep}, posted-at = {2009-01-20 02:22:50}, priority = {2}, title = {Realization of a High Mobility Dual-gated Graphene Field Effect Transistor with Al2O3 Dielectric}, url = {http://arxiv.org/abs/0901.2901}, year = {2009} }

TY - JOUR ID - citeulike:3909724 L3 - citeulike-article-id:3909724 N2 - We fabricate and characterize dual-gated graphene field-effect transistors (FETs) using Al2O3 as top-gate dielectric. We use a thin Al film as a nucleation layer to enable the atomic layer deposition of Al2O3. Our devices show mobility values of over 8,000 cm2/Vs at room temperature, a finding which indicates that the top-gate stack does not significantly increase the carrier scattering, and consequently degrade the device characteristics. We propose a device model to fit the experimental data using a single mobility value. TI - Realization of a High Mobility Dual-gated Graphene Field Effect Transistor with Al2O3 Dielectric KW - disorder KW - edges KW - graphene AU - Kim, Seyoung AU - Nah, Junghyo AU - Jo, Insun AU - Shahrjerdi, Davood AU - Colombo, Luigi AU - Yao, Zhen AU - Tutuc, Emanuel AU - Banerjee, Sanjay PY - 2009/Sep/12/ UR - http://arxiv.org/abs/0901.2901 ER -