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	Cracking of GaN films [My Copy] Journal of Applied Physics, Vol. 89 (2001), 1330243. by E. V. Etzkorn, D. R. Clarke posted to cracking gan model sapphire by newmansc on 2008-09-25 23:26:23 as
	Stress-based prediction of dislocation generation in GaN during lateral epitaxial overgrowth [My Copy] Applied Physics Letters, Vol. 80 (2002), 1547. by Z. Feng, E. Lovell, R. Engelstad, T. Kuech, S. Babcock posted to fem leo modeling sio2 stress by newmansc on 2008-09-25 23:01:08 as
	In situ monitoring of the stress evolution in growing group-III-nitride-layers [My Copy] Journal of Crystal Growth, Vol. 275 (2005), 209. by A. Krost, A. Dadgar, F. Schulze, et al.J. Blasing, G. Strassburger, R. Clos, A. Diez, P. Veit, T. Hempel, J. Christen posted to in-situ nitride stress by newmansc on 2008-09-25 22:56:50 as
	Stress evolution during metalorganic chemical vapor deposition of GaN [My Copy] Applied Physics Letters, Vol. 74 (1999), 346. by S. Hearne, E. Chason, J. Han, et al.J. A. Floro, J. Figiel, J. Hunter, H. Amano, I. S. T. Tsong posted to evolution gan stress by newmansc on 2008-09-25 22:40:00 as
	Competition between tensile and compressive stress creation during constrained thin film island coalescence [My Copy] Journal of Applied Physics, Vol. 101, No. 3. (2007) by Abhinav Bhandari, Brian W. Sheldon, Sean J. Hearne posted to evoluction growth stress volmer-weber by newmansc on 2008-09-25 22:32:00 as
	Competition between tensile and compressive stress mechanisms during Volmer-Weber growth of aluminum nitride films [My Copy] Journal of Applied Physics, Vol. 98 (2005), 043509. by Brian W. Sheldon, Ashok Rajamani, Abhinav Bhandari, Eric Chason, S. K. Hong, R. Beresford posted to no-tag by newmansc on 2008-09-25 22:11:22 as
	Role of inclined threading dislocations in stress relaxation in mismatched layers [My Copy] Journal of Applied Physics, Vol. 97 (2005), 103534. by P. Cantu, F. Wu, P. Waltereit, et al.S. Keller, A. E. Romanov, S. P. Denbaars, J. S. Speck posted to aluminum dislocations nitride relaxation strain by newmansc on 2008-09-25 21:51:42 as
	Thermoelastic strain and plastic yielding in aluminum nitride on sapphire [My Copy] Journal of Applied Physics, Vol. 85, No. 3., 1876. by A. V. Dobrynin posted to aluminum elastic nitride sapphire strain by newmansc on 2008-09-25 21:43:00 as
	Domain epitaxy: A unified paradigm for thin film growth [My Copy] Journal of Applied Physics, Vol. 93 (2003), 1528301. by J. Narayan, B. C. Larson posted to domain epitaxy by newmansc on 2008-09-25 21:36:09 as
	Strain-induced polarization in wurtzite III-nitride semipolar layers [My Copy] Journal of Applied Physics, Vol. 100, No. 2. (2006) by A. E. Romanov, T. J. Baker, S. Nakamura, J. S. Speck, Erato/jst U. C. S. B. Group posted to iii-nitride polarization semipolar by newmansc on 2008-09-23 18:38:13 as
	Elastic properties of zinc-blende and wurtzite AlN, GaN, and InN [My Copy] Journal of Applied Physics, Vol. 82, No. 6. (1997), pp. 2833-2839. by A. F. Wright posted to iii-nitride structure by newmansc on 2008-09-18 04:49:03 as
	Distinct orientation of AlN thin films deposited on sapphire substrates by laser ablation [My Copy] Applied Physics A: Materials Science & Processing, Vol. 70, No. 2. (1 February 2000), pp. 215-218. by J. Meinschien, F. Falk, R. Hergt, H. Stafast posted to aln sapphire structure by newmansc on 2008-09-18 00:58:30 as
	High quality optoelectronic grade epitaxial AlN films on [alpha]-Al2O3, Si and 6H-SiC by pulsed laser deposition [My Copy] Thin Solid Films, Vol. 299, No. 1-2. (15 May 1997), pp. 94-103. by R. D. Vispute, J. Narayan, J. D. Budai posted to aln sapphire structure by newmansc on 2008-09-18 00:41:22 as
	On the upper limit of thermal conductivity GaN crystals [My Copy] Solid State Communications, Vol. 144, No. 3-4. (October 2007), pp. 114-117. by B. A. Danilchenko, I. A. Obukhov, T. Paszkiewicz, S. Wolski, A. Jezowski posted to unfiled by newmansc on 2008-09-06 01:52:17 as
	Some effects of oxygen impurities on AlN and GaN [My Copy] Journal of Crystal Growth, Vol. 246, No. 3-4. (December 2002), pp. 287-298. by Glen A. Slack, Leo J. Schowalter, Donald Morelli, Jaime A. Freitas posted to gan impurity oxygen by newmansc on 2008-09-05 21:26:31 as
	High-Rate Dry Etching of ZnO in BCl3/CH4/H2 Plasmas [My Copy] Japanese Journal of Applied Physics, Vol. 42 (2003), pp. L535-L537. by Jeong-Woon Bae, Chang-Hyun Jeong, Han-Ki Kim, et al.Kyoung-Kook Kim, Nam-Gil Cho, Tae-Yeon Seong, Seong-Ju Park, Ilesanmi Adesida, Geun-Young Yeom posted to etching zno by newmansc on 2008-09-04 03:54:44 as
	Effects of variously configured magnets on the characteristics of inductively coupled plasmas [My Copy] Journal of Vacuum Science & Technology A, Vol. 17 (1999), pp. 1211-1216. by S. W. Hwang, Y. J. Lee, H. R. Han, J. B. Yoo, G. Y. Yeom posted to icp micp by newmansc on 2008-09-04 01:09:16 as
	ICP etching of sapphire substrates [My Copy] Optical Materials, Vol. 27, No. 6. (March 2005), pp. 1171-1174. by Y. P. Hsu, S. J. Chang, Y. K. Su, et al.J. K. Sheu, C. H. Kuo, C. S. Chang, S. C. Shei posted to etching sapphire by newmansc on 2008-09-03 23:12:16 as
	High rate etching of sapphire wafer using Cl2/BCl3/Ar inductively coupled plasmas [My Copy] Materials Science and Engineering B, Vol. 82, No. 1-3. (22 May 2001), pp. 50-52. by Y. J. Sung, H. S. Kim, Y. H. Lee, et al. Lee, S. H. Chae, Y. J. Park, G. Y. Yeom posted to etching sapphire by newmansc on 2008-09-03 23:10:26 as
	A Study of Sapphire Etching Characteristics Using BCl3-based Inductively Coupled Plasmas [My Copy] Japanese Journal of Applied Physics, Vol. 41 (2002), pp. 6206-6208. by Chang H. Jeong, Dong W. Kim, Kyong N. Kim, Geun Y. Yeom posted to no-tag by newmansc on 2008-09-03 23:08:15 as
	Dry etching of sapphire substrate for device separation in chlorine-based inductively coupled plasmas [My Copy] Materials Science and Engineering B, Vol. 93, No. 1-3. (30 May 2002), pp. 60-63. by C. H. Jeong, D. W. Kim, J. W. Bae, et al.Y. J. Sung, J. S. Kwak, Y. J. Park, G. Y. Yeom posted to etching sapphire by newmansc on 2008-09-03 23:03:08 as
	Fabrication of Patterned Sapphire Substrate by Wet Chemical Etching for Maskless Lateral Overgrowth of GaN [My Copy] Journal of The Electrochemical Society, Vol. 153, No. 3. (2006), pp. C182-C185. by Jing Wang, L. W. Guo, H. Q. Jia, et al.Y. Wang, Z. G. Xing, W. Li, H. Chen, J. M. Zhou posted to etching sapphire by newmansc on 2008-09-03 22:51:19 as
	Fabrication of low-loss channel waveguides in Al2O3 and Y2O3 layers by inductively coupled plasma reactive ion etching [My Copy] Applied Physics B: Lasers and Optics, Vol. 89, No. 2. (3 November 2007), pp. 311-318. by J. D. B. Bradley, F. Ay, K. Wörhoff, M. Pollnau posted to etching sapphire by newmansc on 2008-09-03 22:49:33 as
	$My PDF park_01_refractive.pdf$ Refractive Sapphire Microlenses Fabricated by Chlorine-Based Inductively Coupled Plasma Etching [My Copy] Appl. Opt., Vol. 40, No. 22. (2001), pp. 3698-3702. by Si-Hyun Park, Heonsu Jeon, Youn-Joon Sung, Geun-Young Yeom posted to etching sapphire by newmansc on 2008-09-03 22:45:42 as
	Enhancement of Flip-Chip Light-Emitting Diodes With Omni-Directional Reflector and Textured Micropillar Arrays [My Copy] Photonics Technology Letters, IEEE In Photonics Technology Letters, IEEE, Vol. 19, No. 16. (2007), pp. 1200-1202. by Chia-En Lee, Yi-Jiun Lee, Hao-Chung Kuo, et al.Meng-Ru Tsai, B. S. Cheng, Tien-Chang Lu, Shing-Chung Wang, Chia-Tai Kuo posted to no-tag by newmansc on 2008-09-03 22:44:14 as
	Absorption spectroscopy in BCl3 inductively coupled plasmas: determination of density, rotational, translational and vibrational temperatures of BCl molecule [My Copy] Journal of Physics D: Applied Physics, Vol. 41, No. 11. (2008), 115205. by R. Ramos, G. Cunge, M. Touzeau, N. Sadeghi posted to etching sapphire by newmansc on 2008-09-03 22:42:44 as
	Growth of A1N by the chemical vapor reaction process and its application to lateral overgrowth on patterned sapphire substrates [My Copy] Journal of Crystal Growth In The Twelfth International Conference on Metalorganic Vapor Phase Epitaxy, Vol. 272, No. 1-4. (10 December 2004), pp. 370-376. by Kenji Fujito, Tadao Hashimoto, Katsuya Samonji, James S. Speck, Shuji Nakamura posted to aln etching leo sapphire wet by newmansc on 2008-09-03 22:41:13 as
	Gas-Assisted Etching of Sapphire Using Focused Ion Beam [My Copy] Japanese Journal of Applied Physics, Vol. 45 (7 April 2006), pp. 2447-2450. by Ming-Kwei Lee, Kwei-Kuan Kuo posted to etching sapphire by newmansc on 2008-09-03 22:36:24 as
	Study and formation of 2D microstructures of sapphire by focused ion beam milling [My Copy] Microelectronic Engineering, Vol. 85, No. 3. (March 2008), pp. 640-645. by Tao Dai, Xiangning Kang, Bei Zhang, et al.Jun Xu, Kui Bao, Chang Xiong, Zizhao Gan posted to etching sapphire by newmansc on 2008-09-03 22:31:03 as
	Sapphire etching with BCl3/HBr/Ar plasma [My Copy] Surface and Coatings Technology In Proceedings from the Joint International Symposia of the 6th APCPST, 15th SPSM, 4th International Conference on Open Magnetic Sytems for Plasma Confinement and 11th KAPRA., Vol. 171, No. 1-3. (1 July 2002), pp. 280-284. by C. H. Jeong, D. W. Kim, H. Y. Lee, H. S. Kim, Y. J. Sung, G. Y. Yeom posted to etching sapphire by newmansc on 2008-09-03 22:29:07 as
	High rate sapphire (Al2O3) etching in inductively coupled plasmas using axial external magnetic field [My Copy] Thin Solid Films In Proceedings of the Joint International Plasma Symposium of the 6th APCPST, the 15th SPSM and the 11th Kapra Symposia, Vol. 435, No. 1-2. (1 July 2003), pp. 242-246. by D. W. Kim, C. H. Jeong, K. N. Kim, et al.H. Y. Lee, H. S. Kim, Y. J. Sung, G. Y. Yeom posted to etching sapphire by newmansc on 2008-09-03 22:25:48 as along with 1 person RCorbin
	Etching properties of Al2O3 films in inductively coupled plasma [My Copy] Thin Solid Films In Proceedings of the 8th European Vacuum Congress Berlin 2003, 23-26 June 2003, featuring the 8th European Vacuum Conference and 2nd Annual Conference of the German Vaccum Society, Vol. 459, No. 1-2. (1 July 2004), pp. 122-126. by Dong-Pyo Kim, Ji-Won Yeo, Chang-Il Kim posted to etching sapphire by newmansc on 2008-09-03 22:23:47 as
	Etching characteristics of Al2O3 thin films in inductively coupled BCl3/Ar plasma [My Copy] Vacuum, Vol. 82, No. 11. (19 June 2008), pp. 1198-1202. by Sun J. Yun, Alexander Efremov, Mansu Kim, et al.Dae-Won Kim, Jung W. Lim, Yong-Hae Kim, Choong-Heui Chung, Dong J. Park, Kwang-Ho Kwon posted to etching sapphire by newmansc on 2008-09-03 22:11:39 as
	Plasma etching selectivity of ZrO[sub 2] to Si in BCl[sub 3]/Cl[sub 2] plasmas [My Copy] Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 21, No. 6. (2003), pp. 1915-1922. by Lin Sha, Jane P. Chang posted to etching sapphire by newmansc on 2008-09-03 22:04:44 as along with 2 people blswenson these_morel

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