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Niobium nitride‐niobium Josephson tunnel junctions with sputtered amorphous silicon barriers (NbN‐αSi‐Nb) have been prepared using processing that is fully compatible with integrated circuit fabrication. These junctions are of suitable quality and uniformity for digital circuit and S‐I‐S detector applications. The junction quality depends critically upon the properties of the NbN surface, and seems to correlate well with the UV/visible reflectivity of this surface.
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