Hamamatsu S8550 APD arrays for high-resolution scintillator matrices readout Export

@article{citeulike:1467276, abstract = {The performance of Hamamatsu S8550 avalanche photodiode (APD) arrays for scintillator matrices readout has been evaluated. The S8550 device is a monolithic 8x4 pixels structure with an active area of 2.56mm2 for each pixel. The device allows stable operation at gains up to 74, with a detection efficiency of about 60\% for photons of 420nm wavelength. It is characterized by a low noise equal to 27 electrons equivalent noise charge at room temperature. The energy resolution of 14.6\%, for the 511keV peak from a 22Na source has been recorded with a 2x2x10mm3 LSO crystal coupled to one pixel. The number of electron-hole pairs produced by the 511keV photopeak absorbed in LSO is equal to 4830+/-240e-h/MeV. Coupling LSO scintillator crystals to individual pixels of the APD array a coincidence timing resolution of 3.0+/-0.2ns FWHM has been measured for the 511keV -rays from a 22Na source. Finally, we compared the characteristics and readout performance of the Hamamatsu array with the results measured earlier under the same conditions for the quadrant large area avalanche photodiodes of Advanced Photonics Inc.}, author = {Kapusta, M.}, citeulike-article-id = {1467276}, citeulike-linkout-0 = {http://www.ingentaconnect.com/content/els/01689002/2003/00000504/00000001/art00809}, keywords = {apd, array, avalanche, crosstalk, energy, hamamatsu, matrix, resolution, scintillator, time}, month = {May}, pages = {139--142}, posted-at = {2007-07-19 14:12:40}, priority = {2}, title = {Hamamatsu S8550 APD arrays for high-resolution scintillator matrices readout}, url = {http://www.ingentaconnect.com/content/els/01689002/2003/00000504/00000001/art00809} }

TY - JOUR ID - citeulike:1467276 L3 - citeulike-article-id:1467276 N2 - The performance of Hamamatsu S8550 avalanche photodiode (APD) arrays for scintillator matrices readout has been evaluated. The S8550 device is a monolithic 8x4 pixels structure with an active area of 2.56mm2 for each pixel. The device allows stable operation at gains up to 74, with a detection efficiency of about 60% for photons of 420nm wavelength. It is characterized by a low noise equal to 27 electrons equivalent noise charge at room temperature. The energy resolution of 14.6%, for the 511keV peak from a 22Na source has been recorded with a 2x2x10mm3 LSO crystal coupled to one pixel. The number of electron-hole pairs produced by the 511keV photopeak absorbed in LSO is equal to 4830+/-240e-h/MeV. Coupling LSO scintillator crystals to individual pixels of the APD array a coincidence timing resolution of 3.0+/-0.2ns FWHM has been measured for the 511keV -rays from a 22Na source. Finally, we compared the characteristics and readout performance of the Hamamatsu array with the results measured earlier under the same conditions for the quadrant large area avalanche photodiodes of Advanced Photonics Inc. EP - 142 TI - Hamamatsu S8550 APD arrays for high-resolution scintillator matrices readout SP - 139 KW - apd KW - array KW - avalanche KW - crosstalk KW - energy KW - hamamatsu KW - matrix KW - resolution KW - scintillator KW - time AU - Kapusta, M UR - http://www.ingentaconnect.com/content/els/01689002/2003/00000504/00000001/art00809 ER -