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	Ordering in GaInP: epitaxy, basic characteristics and device relevance [My Copy] III-Vs Review, Vol. 10, No. 4. (July 1997), pp. 38-42. by F Scholz, posted to ordering ingap by rforecast on 2009-12-07 11:26:45 as
	OMVPE growth of GaInP [My Copy] Journal of Crystal Growth, Vol. 62, No. 3. (August 1983), pp. 648-650. by C. Hsu, R. Cohen, G. Stringfellow posted to photoluminescence ingap by rforecast on 2009-12-07 11:22:10 as
	Atomic structure and ordering in semiconductor alloys [My Copy] Physical Review B, Vol. 31, No. 4. (Feb 1985), pp. 2561-2564. by G. P. Srivastava, José L. Martins, Alex Zunger posted to ordering iii-v by rforecast on 2009-12-06 21:07:07 as along with 1 person opocus
	Growth related aspects of epitaxial nanowires [My Copy] Nanotechnology In Nanotechnology, Vol. 17, No. 11. (14 June 2006), pp. S355-S361. by Jonas Johansson, Brent A. Wacaser, Kimberly A. Dick, Werner Seifert posted to nanowre iii-v crystal_structure by rforecast on 2009-12-03 20:21:45 as
	Growth kinetics and crystal structure of semiconductor nanowires [My Copy] Physical Review B (Condensed Matter and Materials Physics), Vol. 78, No. 23. (2008), 235301. by V. G. Dubrovskii, N. V. Sibirev, J. C. Harmand, F. Glas posted to nanowire kinetics crystal_structure by rforecast on 2009-12-03 09:35:47 as
	Polarization and temperature dependence of photoluminescence from zincblende and wurtzite InP nanowires [My Copy] Applied Physics Letters, Vol. 91, No. 26. (2007), 263104. by A. Mishra, L. V. Titova, T. B. Hoang, et al.H. E. Jackson, L. M. Smith, J. M. Yarrison Rice, Y. Kim, H. J. Joyce, Q. Gao, H. H. Tan, C. Jagadish posted to zincblende wurtzite photoluminescence nanowire inp by rforecast on 2009-12-02 12:44:02 as along with 1 person maartenvanweert
	Ga-In-P (Gallium-Indium-Phosphorus) [My Copy] Non-Ferrous Metal Systems. Part 1 In Landolt-Börnstein - Group IV Physical Chemistry, Vol. 11C1 (2006), pp. 1-23. by Materials Science International Team MSIT® edited by G. Effenberg, S. Ilyenko posted to photoluminescence ordering ingap by rforecast on 2009-12-02 08:30:35 as
	Mass Transport Model for Semiconductor Nanowire Growth [My Copy] The Journal of Physical Chemistry B, Vol. 109, No. 28. (1 July 2005), pp. 13567-13571. by Jonas Johansson, Svensson, Thomas Martensson, Lars Samuelson, Werner Seifert posted to nanowire iii-v by rforecast on 2009-12-01 11:32:19 as
	Ordered structure in $Ga0.7$$In0.3$P alloy [My Copy] Physical Review Letters, Vol. 63, No. 8. (Aug 1989), pp. 884-886. by Masahiko Kondow, Hiroshi Kakibayashi, Toshiaki Tanaka, Shigekazu Minagawa posted to ordering ingap by rforecast on 2009-11-30 13:56:00 as
	Ordered structure in OMVPE-grown Ga0.5In0.5P [My Copy] Journal of Crystal Growth, Vol. 88, No. 2. (2 April 1988), pp. 291-296. by M. Kondow posted to tem photoluminescence ordering ingap by rforecast on 2009-11-30 13:52:34 as
	A thermodynamic assessment of the Ga-In-P system [My Copy] Journal of Phase Equilibria and Diffusion, Vol. 21, No. 4. (1 July 2000), pp. 357-363. by Ch Li, J. Li, Z. Du, W. Zhang posted to thermodynamics ingap by rforecast on 2009-11-30 13:15:56 as
	Atomic ordering in GaAsP [My Copy] Journal of Applied Physics, Vol. 69, No. 8. (1991), pp. 4263-4272. by G. S. Chen, D. H. Jaw, G. B. Stringfellow posted to ordering iii-v by rforecast on 2009-11-30 11:47:41 as
	Ordered GaInP by atomic layer epitaxy [My Copy] Journal of Crystal Growth, Vol. 107, No. 1-4. (1 January 1991), pp. 96-101. by B. McDermott posted to ordering ingap by rforecast on 2009-11-30 11:23:17 as
	The effect of pressure on the band-gap energy in ordered GaInP and AlGaInP grown by MOVPE [My Copy] Journal of Physics and Chemistry of Solids, Vol. 56, No. 3-4. (April 1995), pp. 311-317. by T. Kobayashi posted to photoluminescence ordering ingap by rforecast on 2009-11-30 11:20:23 as
	Surface photoabsorption study of the effects of growth temperature and V/III ratio on ordering in GaInP [My Copy] Journal of Applied Physics, Vol. 79, No. 9. (1996), pp. 6895-6899. by H. Murata, I. H. Ho, L. C. Su, Y. Hosokawa, G. B. Stringfellow posted to ordering ingap by rforecast on 2009-11-30 11:13:43 as
	Surface-induced ordering in GaInP [My Copy] Physical Review Letters, Vol. 66, No. 16. (Apr 1991), pp. 2132-2135. by Sverre Froyen, Alex Zunger posted to ordering ingap by rforecast on 2009-11-30 11:12:04 as
	Control and characterization of ordering in GaInP [My Copy] Applied Physics Letters, Vol. 62, No. 26. (1993), pp. 3496-3498. by L. C. Su, S. T. Pu, G. B. Stringfellow, J. Christen, H. Selber, D. Bimberg posted to ordering ingap by rforecast on 2009-11-30 11:09:33 as
	High Brightness Light Emitting Diodes, Volume 48 (Semiconductors and Semimetals) (Vol.48) [My Copy] (22 October 1997) edited by Gerald B. Stringfellow, M. George Craford posted to led iii-v by rforecast on 2009-11-29 10:50:35 as
	Phase separation phenomenon in MOCVD-grown GaInP epitaxial layers [My Copy] Journal of Crystal Growth, Vol. 311, No. 11. (15 May 2009), pp. 3220-3224. by Yu-Li Tsai, Ray-Hua Horng, Ming-Chun Tseng, et al.Chia-hao Kuo, Po-Liang Liu, Dong-Sing Wuu, Der-Yuh Lin posted to mocvd ingap bulk by rforecast on 2009-11-28 16:37:19 as
	Growth and Optical Properties of Strained GaAs−GaxIn1-xP Core−Shell Nanowires [My Copy] Nano Letters, Vol. 5, No. 10. (1 October 2005), pp. 1943-1947. by Niklas Skold, Lisa S. Karlsson, Magnus W. Larsson, et al.Mats-Erik Pistol, Werner Seifert, Johanna Tragardh, Lars Samuelson posted to strain photoluminescence nanowire nano ingap gaas by rforecast on 2009-11-27 08:14:59 as
	Sulphide passivation of GaAs: the role of the sulphur chemical activity [My Copy] Semiconductor Science and Technology, Vol. 13, No. 6. (1998), pp. 611-614. by Vasily N. Bessolov, Mikhail V. Lebedev, Nguyen M. Binh, Marion Friedrich, Dietrich R. T. Zahn posted to sulphur photoluminescence gaas by rforecast on 2009-11-26 15:46:51 as
	Strong ordering in GaInP alloy semiconductors; Formation mechanism for the ordered phase [My Copy] Journal of Crystal Growth, Vol. 93, No. 1-4. (1988), pp. 396-405. by T. Suzuki posted to ordering movpe ingap by rforecast on 2009-11-18 15:15:09 as
	Studies of GaxIn1−xP layers grown by metalorganic vapor phase epitaxy; Effects of V/III ratio and growth temperature [My Copy] Journal of Crystal Growth, Vol. 77, No. 1-3. (September 1986), pp. 367-373. by A. Gomyo posted to movpe ingap iii-v by rforecast on 2009-11-18 15:12:05 as
	Doping studies of Ga[sub 0.5]In[sub 0.5]P organometallic vapor-phase epitaxy [My Copy] Journal of Applied Physics, Vol. 59, No. 2. (1986), pp. 395-398. by C. C. Hsu, J. S. Yuan, R. M. Cohen, G. B. Stringfellow posted to photoluminescence n-doped ingap iii-v by rforecast on 2009-11-18 13:34:41 as
	Organometallic growth and characterization of Ga[sub x]In[sub 1 - x]P (x=0.51, 0.65, 0.69) [My Copy] Journal of Applied Physics, Vol. 60, No. 4. (1986), pp. 1346-1351. by J. S. Yuan, M. T. Tsai, C. H. Chen, R. M. Cohen, G. B. Stringfellow posted to photoluminescence ingap iii-v by rforecast on 2009-11-18 13:28:39 as
	High quality GaxIn1−xP (x = 0.65, 0.69) grown by OMVPE [My Copy] Journal of Crystal Growth, Vol. 78, No. 1. (October 1986), pp. 63-68. by J. Yuan posted to movpe ingap by rforecast on 2009-11-18 13:08:30 as
	Twinning superlattices in indium phosphide nanowires [My Copy] Nature, Vol. 456, No. 7220. (20 November 2008), pp. 369-372. by Rienk E. Algra, Marcel A. Verheijen, Magnus T. Borgstrom, et al.Lou-Fe Feiner, George Immink, Willem J. P. van Enckevort, Elias Vlieg, Erik P. A. M. Bakkers posted to wurtzite nanowire movpe inp by rforecast on 2009-11-16 15:38:17 as along with 4 people maartenvanweert opocus nika mllee
	Electronic, Transport, Optical and Other Properties (Landolt-Bornstein) [My Copy] (18 September 2002) edited by U. Rössler posted to photoluminescence phonon optics iii-v data by rforecast on 2009-11-16 15:21:14 as
	Crystal-structure-dependent photoluminescence from InP nanowires [My Copy] Nanotechnology, Vol. 17, No. 6. (2006), pp. 1580-1583. by M. Mattila, T. Hakkarainen, M. Mulot, H. Lipsanen posted to photoluminescence nanowire inp by rforecast on 2009-11-16 15:05:47 as
	Kinetic study of metalorganic molecular beam epitaxy of GaP, InP, and Ga[sub x]In[sub 1 - x]P [My Copy] Journal of Applied Physics, Vol. 69, No. 5. (1991), pp. 3297-3302. by Ch, Ph, Ph, J. P. Hirtz posted to movpe kinetics inp ingap gaas by rforecast on 2009-11-12 09:14:41 as
	Sulfur doping of GaAs and GaInP grown by metalorganic molecular beam epitaxy using a hydrogen sulfide gaseous source [My Copy] Applied Physics Letters, Vol. 58, No. 18. (1991), pp. 1973-1975. by Ph Bove, Garcia, Ph Maurel, J. P. Hirtz posted to sulphur n-doped ingap iii-v by rforecast on 2009-11-12 09:08:22 as
	Structural properties of \|[lang]\|111\|[rang]\|B -oriented III\|[ndash]\|V nanowires [My Copy] Nature Materials, Vol. 5, No. 7. (18 June 2006), pp. 574-580. by Jonas Johansson, Lisa S. Karlsson, Patrik, et al.Thomas Martensson, Brent A. Wacaser, Knut Deppert, Lars Samuelson, Werner Seifert posted to nanowire iii-v defect_formation by rforecast on 2009-11-10 15:58:51 as
	Unexpected benefits of rapid growth rate for III-V nanowires. [My Copy] Nano letters, Vol. 9, No. 2. (February 2009), pp. 695-701. by Hannah J. Joyce, Qiang Gao, Hoe H. Tan, et al.Chennupati Jagadish, Yong Kim, Melodie A. Fickenscher, Saranga Perera, Thang Ba B. Hoang, Leigh M. Smith, Howard E. Jackson, Jan M. Yarrison-Rice, Xin Zhang, Jin Zou posted to photoluminescence nanowire gaas by rforecast on 2009-11-10 15:20:46 as
	III-V nanowires for optoelectronics [My Copy] Optoelectronic Materials and Devices, Vol. 6352, No. 1. (2006), 635226. by Yong Kim, Q. Gao, H. J. Joyce, et al.H. H. Tan, C. Jagadish, M. Paladugu, J. Zou edited by Yong H. Lee, Fumio Koyama, Yi Luo posted to photoluminescence nanowire iii-v by rforecast on 2009-11-10 15:18:02 as
	High Purity GaAs Nanowires Free of Planar Defects: Growth and Characterization [My Copy] Advanced Functional Materials, Vol. 18, No. 23. (2008), pp. 3794-3800. by Hannah J. Joyce, Qiang Gao, Hoe H. Tan, et al.Chennupati Jagadish, Yong Kim, Melodie A. Fickenscher, Saranga Perera, Thang B. Hoang, Leigh M. Smith, Howard E. Jackson, Jan M. Yarrison-Rice, Xin Zhang, Jin Zou posted to photoluminescence nanowire movpe gaas by rforecast on 2009-11-10 15:15:16 as
	Semiconductor Nanostructure Data [My Copy] Physical Review B, Vol. 78, No. 115319. (2008) by M. E. Pistol, C. E. Pryor posted to iii-v heterostructure core-shell bandgap band_structure by rforecast on 2009-11-04 14:10:31 as
	BAND STRUCTURE AND DIRECT TRANSITION ELECTROLUMINESCENCE IN THE In[sub 1 - x]Ga[sub x]P ALLOYS [My Copy] Applied Physics Letters, Vol. 13, No. 12. (1968), pp. 421-423. by M. R. Lorenz, W. Reuter, W. P. Dumke, R. J. Chicotka, G. D. Pettit, J. M. Woodall posted to ingap bandgap by rforecast on 2009-11-04 13:09:35 as
	Fundamental Properties of Wide Bandgap Semiconductors [My Copy] Wide Bandgap Semiconductors (2007), pp. 25-96. by Sadafumi Yoshida, Toshimichi Ito, Akio Hiraki, et al.Hiroshi Saito, Shizuo Fujita, Yoshihiro Ishitani, Shiro Sakai, Takao Miyajima, Yoichi Yamada, Yoichi Kawakami, Ikuo Suemune, Kazumasa Hiramatsu, Hideo Kawanishi, Hiroshi Amano, Hajime Okumura, Takashi Mizutani posted to iii-v bowing_parameter bandgap by rforecast on 2009-11-04 13:06:38 as
	Temperature dependence of photoluminescence intensity from AlGaInP/GaInP multi-quantum well laser structures [My Copy] Journal of Crystal Growth, Vol. 268, No. 3-4. (August 2004), pp. 426-431. by C. Liu posted to photoluminescence ingap bandgap by rforecast on 2009-11-04 12:50:45 as
	Organometallic Vapor-Phase Epitaxy, Second Edition: Theory and Practice [My Copy] (23 December 1998) by Gerald B. Stringfellow posted to movpe inp ingap gaas by rforecast on 2009-10-27 15:57:33 as
	Optical Processes in Semiconductors [My Copy] (01 June 1975) by Jacques I. Pankove posted to spectroscopy optics band-structure by rforecast on 2009-10-27 15:55:33 as
	The importance of lattice mismatch in the growth of Ga[sub x]In[sub 1 - x]P epitaxial crystals [My Copy] Journal of Applied Physics, Vol. 43, No. 8. (1972), pp. 3455-3460. by G. B. Stringfellow posted to lattice_mismatch ingap by rforecast on 2009-10-27 15:50:47 as
	Raman study of low growth temperature GaAs [My Copy] Applied Physics Letters, Vol. 60, No. 12. (1992), pp. 1453-1455. by T. A. Gant, H. Shen, J. R. Flemish, L. Fotiadis, M. Dutta posted to raman phonon iii-v by rforecast on 2009-09-24 11:39:51 as
	The Raman effect in crystals [My Copy] Advances in Physics (2001) by R. Loudon posted to strain raman phonon elastic_constants crystal_structure by rforecast on 2009-09-08 14:54:47 as
	Effect of uniaxial stress on the zone-center optical phonon of diamond [My Copy] Physical Review B, Vol. 18, No. 2. (Jul 1978), pp. 901-904. by M. H. Grimsditch, E. Anastassakis, M. Cardona posted to stress phonon elastic_constants crystal_structure by rforecast on 2009-09-08 09:05:00 as
	Raman-active phonon line profiles in semiconducting nanowires [My Copy] Vibrational Spectroscopy, Vol. 42, No. 1. (18 October 2006), pp. 165-175. by K. Adu, H. Gutierrez, P. Eklund posted to raman phonon nanowire by rforecast on 2009-09-07 11:28:35 as
	Thermoelectric properties of superlattice nanowires [My Copy] Physical Review B, Vol. 68, No. 7. (Aug 2003), 075304. by Yu M. Lin, M. S. Dresselhaus posted to thermoelectric by rforecast on 2009-09-03 17:40:56 as
	Band structure of core-shell semiconductor nanowires [My Copy] Physical Review B (Condensed Matter and Materials Physics), Vol. 78, No. 11. (2008), 115319. by M. E. Pistol, C. E. Pryor posted to nanowire heterostructure core-shell band_structure by rforecast on 2009-09-03 08:59:30 as
	Theoretical investigations on the formation of wurtzite segments in group III–V semiconductor nanowires [My Copy] Applied Surface Science, Vol. 254, No. 23. (30 September 2008), pp. 7668-7671. by T. Yamashita, K. Sano, T. Akiyama, K. Nakamura, T. Ito posted to iii-v wurtzite by rforecast on 2009-07-21 14:05:47 as
	Surface photoabsorption monitoring of III–V and GaN MOVPE surfaces [My Copy] Journal of Crystal Growth, Vol. 195, No. 1-4. (15 December 1998), pp. 228-233. by N. Kobayashi posted to ingap movpe by rforecast on 2009-07-13 15:12:22 as

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ingap	26
iii-v	17
nanowire	15
photoluminescence	15
ordering	12
movpe	8
raman	7
gaas	7
inp	6
phonon	5
rhodium	5
adsorption	5
surface	5
optics	4
crystal_structure	4
bandgap	4
ters	4
led	3
wurtzite	3
heterostructure	3
strain	3
sulphur	2
kinetics	2
elastic_constants	2
band_structure	2
spectroscopy	2
core-shell	2
n-doped	2
nanowre	1
spin	1
nano	1
data	1
tem	1
stress	1
zincblende	1
plasmon	1
bowing_parameter	1
silicon	1
thermoelectric	1
lattice_mismatch	1
thermodynamics	1
mocvd	1
polaritons	1
solid_state_lighting	1
hall	1
bulk	1
eels	1
whispering_gallery	1
defect_formation	1
band-structure	1

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