rforecast's photoluminescence [15 articles] Export Sort

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	OMVPE growth of GaInP [My Copy] Journal of Crystal Growth, Vol. 62, No. 3. (August 1983), pp. 648-650. by C. Hsu, R. Cohen, G. Stringfellow posted to photoluminescence ingap by rforecast on 2009-12-07 11:22:10 as
	Polarization and temperature dependence of photoluminescence from zincblende and wurtzite InP nanowires [My Copy] Applied Physics Letters, Vol. 91, No. 26. (2007), 263104. by A. Mishra, L. V. Titova, T. B. Hoang, et al.H. E. Jackson, L. M. Smith, J. M. Yarrison Rice, Y. Kim, H. J. Joyce, Q. Gao, H. H. Tan, C. Jagadish posted to zincblende wurtzite photoluminescence nanowire inp by rforecast on 2009-12-02 12:44:02 as along with 1 person maartenvanweert
	Ga-In-P (Gallium-Indium-Phosphorus) [My Copy] Non-Ferrous Metal Systems. Part 1 In Landolt-Börnstein - Group IV Physical Chemistry, Vol. 11C1 (2006), pp. 1-23. by Materials Science International Team MSIT® edited by G. Effenberg, S. Ilyenko posted to photoluminescence ordering ingap by rforecast on 2009-12-02 08:30:35 as
	Ordered structure in OMVPE-grown Ga0.5In0.5P [My Copy] Journal of Crystal Growth, Vol. 88, No. 2. (2 April 1988), pp. 291-296. by M. Kondow posted to tem photoluminescence ordering ingap by rforecast on 2009-11-30 13:52:34 as
	The effect of pressure on the band-gap energy in ordered GaInP and AlGaInP grown by MOVPE [My Copy] Journal of Physics and Chemistry of Solids, Vol. 56, No. 3-4. (April 1995), pp. 311-317. by T. Kobayashi posted to photoluminescence ordering ingap by rforecast on 2009-11-30 11:20:23 as
	Growth and Optical Properties of Strained GaAs−GaxIn1-xP Core−Shell Nanowires [My Copy] Nano Letters, Vol. 5, No. 10. (1 October 2005), pp. 1943-1947. by Niklas Skold, Lisa S. Karlsson, Magnus W. Larsson, et al.Mats-Erik Pistol, Werner Seifert, Johanna Tragardh, Lars Samuelson posted to strain photoluminescence nanowire nano ingap gaas by rforecast on 2009-11-27 08:14:59 as
	Sulphide passivation of GaAs: the role of the sulphur chemical activity [My Copy] Semiconductor Science and Technology, Vol. 13, No. 6. (1998), pp. 611-614. by Vasily N. Bessolov, Mikhail V. Lebedev, Nguyen M. Binh, Marion Friedrich, Dietrich R. T. Zahn posted to sulphur photoluminescence gaas by rforecast on 2009-11-26 15:46:51 as
	Doping studies of Ga[sub 0.5]In[sub 0.5]P organometallic vapor-phase epitaxy [My Copy] Journal of Applied Physics, Vol. 59, No. 2. (1986), pp. 395-398. by C. C. Hsu, J. S. Yuan, R. M. Cohen, G. B. Stringfellow posted to photoluminescence n-doped ingap iii-v by rforecast on 2009-11-18 13:34:41 as
	Organometallic growth and characterization of Ga[sub x]In[sub 1 - x]P (x=0.51, 0.65, 0.69) [My Copy] Journal of Applied Physics, Vol. 60, No. 4. (1986), pp. 1346-1351. by J. S. Yuan, M. T. Tsai, C. H. Chen, R. M. Cohen, G. B. Stringfellow posted to photoluminescence ingap iii-v by rforecast on 2009-11-18 13:28:39 as
	Electronic, Transport, Optical and Other Properties (Landolt-Bornstein) [My Copy] (18 September 2002) edited by U. Rössler posted to photoluminescence phonon optics iii-v data by rforecast on 2009-11-16 15:21:14 as
	Crystal-structure-dependent photoluminescence from InP nanowires [My Copy] Nanotechnology, Vol. 17, No. 6. (2006), pp. 1580-1583. by M. Mattila, T. Hakkarainen, M. Mulot, H. Lipsanen posted to photoluminescence nanowire inp by rforecast on 2009-11-16 15:05:47 as
	Unexpected benefits of rapid growth rate for III-V nanowires. [My Copy] Nano letters, Vol. 9, No. 2. (February 2009), pp. 695-701. by Hannah J. Joyce, Qiang Gao, Hoe H. Tan, et al.Chennupati Jagadish, Yong Kim, Melodie A. Fickenscher, Saranga Perera, Thang Ba B. Hoang, Leigh M. Smith, Howard E. Jackson, Jan M. Yarrison-Rice, Xin Zhang, Jin Zou posted to photoluminescence nanowire gaas by rforecast on 2009-11-10 15:20:46 as
	III-V nanowires for optoelectronics [My Copy] Optoelectronic Materials and Devices, Vol. 6352, No. 1. (2006), 635226. by Yong Kim, Q. Gao, H. J. Joyce, et al.H. H. Tan, C. Jagadish, M. Paladugu, J. Zou edited by Yong H. Lee, Fumio Koyama, Yi Luo posted to photoluminescence nanowire iii-v by rforecast on 2009-11-10 15:18:02 as
	High Purity GaAs Nanowires Free of Planar Defects: Growth and Characterization [My Copy] Advanced Functional Materials, Vol. 18, No. 23. (2008), pp. 3794-3800. by Hannah J. Joyce, Qiang Gao, Hoe H. Tan, et al.Chennupati Jagadish, Yong Kim, Melodie A. Fickenscher, Saranga Perera, Thang B. Hoang, Leigh M. Smith, Howard E. Jackson, Jan M. Yarrison-Rice, Xin Zhang, Jin Zou posted to photoluminescence nanowire movpe gaas by rforecast on 2009-11-10 15:15:16 as
	Temperature dependence of photoluminescence intensity from AlGaInP/GaInP multi-quantum well laser structures [My Copy] Journal of Crystal Growth, Vol. 268, No. 3-4. (August 2004), pp. 426-431. by C. Liu posted to photoluminescence ingap bandgap by rforecast on 2009-11-04 12:50:45 as

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rforecast's photoluminescence [15 articles] Export Sort

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