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	Application of Fourier Transform Infrared Ellipsometry to Assess the Concentration of Biological Molecules [My Copy] Appl. Opt., Vol. 41, No. 34. (2 December 2002), pp. 7339-7345. by Enric Garcia-Caurel, Bernard Drévillon, Antonello De Martino, Laurent Schwartz posted to no-tag by rice on 2008-09-01 07:41:49 as
	Free carriers reactivation on p+-mesoporous silicon through ammonia adsorption: a FTIR study [My Copy] Sensors and Actuators B: Chemical In New materials and Technologies in Sensor Applications, Proceedings of the European Materials Research Society 2003 - Symposium N, Vol. 100, No. 1-2. (1 June 2004), pp. 205-208. by F. Geobaldo, P. Rivolo, G. P. Salvador, G. Amato, L. Boarino, E. Garrone posted to no-tag by rice on 2008-06-30 17:05:40 as
	Heavy carriers, non-drude optical conductivity and transfer of spectral weight in MnSi [My Copy] Journal of Magnetism and Magnetic Materials In Proceedings of the International Conference on Magnetism (ICM 2003), Vol. 272-276, No. Supplement 1. (May 2004), pp. E53-E55. by F. P. Mena, A. Damascelli, D. van der Marel, M. Fath, A. A. Menovsky, J. A. Mydosh posted to no-tag by rice on 2008-06-30 17:05:38 as
	Non-Arrhenius ionic conductivity in optimized fast ion conducting glasses: application of the Drude model to ion-ion scattering [My Copy] Journal of Non-Crystalline Solids, Vol. 307-310 (September 2002), pp. 981-991. by Steve W. Martin, Jeremy Schrooten, Ben Meyer posted to no-tag by rice on 2008-06-30 17:05:37 as
	Optical conductivity of oxides [My Copy] Materials Science and Engineering: R: Reports, Vol. 39, No. 2-3. (1 October 2002), pp. 29-92. by François Gervais posted to no-tag by rice on 2008-06-30 17:05:36 as
	Interrelation between nanostructure and optical properties of oxide thin films by spectroscopic ellipsometry [My Copy] Surface and Coatings Technology, Vol. 151-152 (1 March 2002), pp. 2-8. by M. Losurdo, D. Barreca, P. Capezzuto, G. Bruno, E. Tondello posted to no-tag by rice on 2008-06-30 17:05:35 as
	Non-destructive characterisation of doped Si and SiGe epilayers using FTIR spectroscopic ellipsometry (FTIR-SE) [My Copy] Materials Science and Engineering B, Vol. 89, No. 1-3. (14 February 2002), pp. 146-150. by C. Pickering, W. Y. Leong, J. L. Glasper, P. Boher, Piel posted to no-tag by rice on 2008-06-30 17:05:35 as
	Drude absorption and electron localization in GaAs/AlGaAs superlattices [My Copy] Physica B: Condensed Matter, Vol. 272, No. 1-4. (1 December 1999), pp. 183-186. by K. Tamura, K. Hirakawa, Y. Shimada posted to no-tag by rice on 2008-06-30 17:05:33 as
	Review and analysis of refractive index temperature dependence in amorphous SiO2 [My Copy] Journal of Non-Crystalline Solids (September 1998), pp. 30-36. by C. Z. Tan posted to no-tag by rice on 2008-06-30 17:01:58 as
	Self-diffusion and impurity diffusion in silicon dioxide [My Copy] Journal of Phase Equilibria and Diffusion, Vol. 26, No. 5. (2005), pp. 547-554. by Masashi Uematsu posted to no-tag by rice on 2008-06-30 16:57:41 as
	Long-range effects in ion-implanted silicon-silicon-dioxide structures [My Copy] Technical Physics Letters, Vol. 23, No. 10. (17 October 1997), pp. 786-787. by A. Baraban, L. Malyavka posted to no-tag by rice on 2008-06-30 16:57:29 as
	Optical functions of the Drude model: transformation of the spectra over wide ranges of parameters [My Copy] Low Temperature Physics, Vol. 27, No. 3. (2001), pp. 216-227. by A. I. Galuza, A. B. Beznosov posted to no-tag by rice on 2008-06-30 16:55:21 as
	Metal and composite nanocluster precipitate formation in silicon dioxide implanted with Sb[sup +] ions [My Copy] Journal of Applied Physics, Vol. 92, No. 8. (2002), pp. 4336-4341. by V. A. Ignatova, O. I. Lebedev, U. Wätjen, et al.L. Van Vaeck, J. Van Landuyt, R. Gijbels, F. Adams posted to jap by rice on 2008-06-30 16:52:14 as
	Arsenic-related defects in SiO[sub 2] [My Copy] Journal of Applied Physics, Vol. 78, No. 3. (1995), pp. 1514-1518. by S. Alexandrova posted to jap by rice on 2008-06-30 16:52:13 as
	Range distribution of implanted cesium ions in silicon dioxide films [My Copy] Journal of Applied Physics, Vol. 63, No. 12. (1988), pp. 5887-5889. by Bruce J. Fishbein, James D. Plummer posted to jap by rice on 2008-06-30 16:52:13 as
	Microscopic location of electron traps induced by arsenic implantation in silicon dioxide [My Copy] Journal of Applied Physics, Vol. 54, No. 1. (1983), pp. 174-178. by S. Alexandrova, D. R. Young posted to jap by rice on 2008-06-30 16:52:12 as
	Secondary ion mass spectrometry: Depth profiling of shallow As implants in silicon and silicon dioxide [My Copy] Journal of Applied Physics, Vol. 56, No. 5. (1984), pp. 1425-1433. by W. Vandervorst, H. E. Maes, R. F. De Keersmaecker posted to jap by rice on 2008-06-30 16:52:11 as
	Effects of oxidation and nitrogen annealing on ion-implantation-induced interface states in the silicon--silicon dioxide system [My Copy] Journal of Applied Physics, Vol. 48, No. 2. (1977), pp. 834-836. by D. W. Hess, A. J. Learn posted to jap by rice on 2008-06-30 16:52:10 as
	Electron trapping and detrapping characteristics of arsenic-implanted SiO[sub 2] layers [My Copy] Journal of Applied Physics, Vol. 51, No. 2. (1980), pp. 1085-1101. by R. F. Dekeersmaecker, D. J. Dimaria posted to jap by rice on 2008-06-30 16:52:09 as
	Effects of ion implantation on charges in the silicon--silicon dioxide system [My Copy] Journal of Applied Physics, Vol. 48, No. 1. (1977), pp. 308-312. by A. J. Learn, D. W. Hess posted to jap by rice on 2008-06-30 16:52:09 as
	Determination of the carrier concentration in InGaAsN/GaAs single quantum wells using Raman scattering [My Copy] Applied Physics Letters, Vol. 85, No. 21. (2004), pp. 4905-4907. by Patrick A. Grandt, Aureus E. Griffith, M. O. Manasreh, D. J. Friedman, S. Dogan, D. Johnstone posted to apl by rice on 2008-06-30 16:39:31 as
	Oxygen effects on arsenic diffusion in silicon dioxide [My Copy] Applied Physics Letters, Vol. 32, No. 2. (1978), pp. 117-119. by Katsuhiro Tsukamoto, Yoichi Akasaka, Kazuo Horie posted to apl by rice on 2008-06-30 16:39:29 as
	Characterization of cesium diffusion in silicon dioxide films using backscattering spectrometry [My Copy] Applied Physics Letters, Vol. 50, No. 17. (1987), pp. 1200-1202. by Bruce J. Fishbein, James D. Plummer posted to apl by rice on 2008-06-30 16:39:27 as
	Fast diffusion component of ion-implanted arsenic in thermally grown silicon dioxide [My Copy] Applied Physics Letters, Vol. 53, No. 3. (1988), pp. 189-191. by Tong S. Lee, P. Fellinger posted to apl by rice on 2008-06-30 16:39:26 as
	Rapid thermal anneal of hydrogen-implanted metal-silicon nitride-silicon dioxide-silicon structure [My Copy] Applied Physics Letters, Vol. 56, No. 14. (1990), pp. 1336-1338. by B. S. Panwar, A. B. Bhattacharyya posted to apl by rice on 2008-06-30 16:39:25 as
	Multimodal impurity redistribution and nanocluster formation in Ge implanted silicon dioxide films [My Copy] Applied Physics Letters, Vol. 71, No. 22. (1997), pp. 3215-3217. by J. von Borany, R. Grötzschel, K. H. Heinig, et al.A. Markwitz, W. Matz, B. Schmidt, W. Skorupa posted to apl by rice on 2008-06-30 16:39:24 as
	Infrared studies of silicon oxide formation in silicon wafers implanted with oxygen [My Copy] Applied Physics Letters, Vol. 72, No. 22. (1998), pp. 2853-2855. by Haruhiko Ono, Taeko Ikarashi, Atsushi Ogura posted to apl by rice on 2008-06-30 16:39:23 as
	Room-temperature, short-wavelength (400--500 nm) photoluminescence from silicon-implanted silicon dioxide films [My Copy] Applied Physics Letters, Vol. 68, No. 17. (1996), pp. 2410-2412. by W. Skorupa, R. A. Yankov, I. E. Tyschenko, H. Fröb, T. Böhme, K. Leo posted to apl by rice on 2008-06-30 16:39:22 as
	Strong blue and violet photoluminescence and electroluminescence from germanium-implanted and silicon-implanted silicon-dioxide layers [My Copy] Applied Physics Letters, Vol. 71, No. 19. (1997), pp. 2809-2811. by L. Rebohle, J. von Borany, R. A. Yankov, et al.W. Skorupa, I. E. Tyschenko, H. Fröb, K. Leo posted to apl by rice on 2008-06-30 16:39:21 as
	Coulombic and neutral trapping centers in silicon dioxide [My Copy] Physical Review B, Vol. 43, No. 2. (15 January 1991), 1471. by D. A. Buchanan, M. V. Fischetti, D. J. Dimaria posted to physrev by rice on 2008-06-30 16:32:18 as
	Theory of Spin Hall Effect: Extension of the Drude Model [My Copy] Physical Review Letters, Vol. 99, No. 20. (2007) by Eugene M. Chudnovsky posted to physrev by rice on 2008-06-30 16:32:08 as
	Generalized Drude approach to the conductivity relaxation time due to electron-hole collisions in optically excited semiconductors [My Copy] Physical Review B, Vol. 40, No. 18. (15 December 1989), 12438. by Bo E. Sernelius posted to physrev by rice on 2008-06-30 16:32:06 as
	Unified Description of Charge-Carrier Mobilities in Disordered Semiconducting Polymers [My Copy] Physical Review Letters, Vol. 94, No. 20. (May 2005), 206601. by W. F. Pasveer, J. Cottaar, C. Tanase, et al.R. Coehoorn, P. A. Bobbert, P. W. Blom, D. M. de Leeuw, M. A. Michels posted to physrev by rice on 2008-06-21 05:38:44 as along with 1 person merodrig
	Erratum: Monovacancy and Interstitial Migration in Ion-Implanted Silicon [Phys. Rev. Lett. [bold 98], 265502 (2007)] [My Copy] Physical Review Letters, Vol. 99, No. 18. (2007) by P. G. Coleman, C. P. Burrows posted to physrev by rice on 2008-06-21 05:37:46 as
	Monovacancy and Interstitial Migration in Ion-Implanted Silicon [My Copy] Physical Review Letters, Vol. 98, No. 26. (2007) by P. G. Coleman, C. P. Burrows posted to physrev by rice on 2008-06-21 05:37:45 as
	Mechanism of Carrier Photogeneration and Carrier Transport in Molecular Crystal Tetracene [My Copy] Physical Review Letters, Vol. 97, No. 6. (2006) by Daniel Moses, Cesare Soci, Xialiou Chi, Arthur P. Ramirez posted to physrev by rice on 2008-06-21 05:37:44 as along with 1 person bxk
	Experimental Evidence of Dislocation Related Shallow States in p-Type Si [My Copy] Physical Review Letters, Vol. 95, No. 7. (2005) by A. Castaldini, D. Cavalcoli, A. Cavallini, S. Pizzini posted to physrev by rice on 2008-06-21 05:37:42 as
	Primary Photoexcitations and the Origin of the Photocurrent in Rubrene Single Crystals [My Copy] Physical Review Letters, Vol. 96, No. 5. (2006) by Hikmat Najafov, Ivan Biaggio, Vitaly Podzorov, Matthew F. Calhoun, Michael E. Gershenson posted to physrev by rice on 2008-06-21 05:37:41 as along with 1 person bxk
	Excitonic Absorption above the Mott Transition in Si [My Copy] Physical Review Letters, Vol. 91, No. 24. (December 2003), 246401. by P. Grivickas, V. Grivickas, J. Linnros posted to physrev by rice on 2008-06-21 05:37:18 as
	Structure and the Reflectionless/Refractionless Nature of Parabolic Diffusion-Wave Fields [My Copy] Physical Review Letters, Vol. 87, No. 2. (20 June 2001), 020801. by Andreas Mandelis, Lena Nicolaides, Yan Chen posted to physrev by rice on 2008-06-21 05:36:56 as
	Measurement of Roughness of Two Interfaces of a Dielectric Film by Scattering Ellipsometry [My Copy] Physical Review Letters, Vol. 85, No. 2. (10 July 2000), 349. by Thomas A. Germer posted to physrev by rice on 2008-06-21 05:36:55 as
	Stimulated Emission from Donor Transitions in Silicon [My Copy] Physical Review Letters, Vol. 84, No. 22. (29 May 2000), 5220. by S. G. Pavlov, Zhukavin, E. E. Orlova, et al.V. N. Shastin, A. V. Kirsanov, H. W. Hübers, K. Auen, H. Riemann posted to physrev by rice on 2008-06-21 05:36:55 as
	Preferential Amorphization at Extended Defects of Self-Ion-Irradiated Silicon [My Copy] Physical Review Letters, Vol. 82, No. 4. (25 January 1999), 771. by R. D. Goldberg, J. S. Williams, R. G. Elliman posted to physrev by rice on 2008-06-21 05:36:53 as
	Interaction Induced Electron Self-Interference in a Semiconductor: The Phonon Staircase Effect [My Copy] Physical Review Letters, Vol. 78, No. 25. (23 June 1997), 4873. by J. A. Kenrow, El, C. J. Stanton posted to physrev by rice on 2008-06-21 05:35:03 as
	Energetics of Self-Interstitial Clusters in Si [My Copy] Physical Review Letters, Vol. 82, No. 22. (31 May 1999), 4460. by N. E. B. Cowern, G. Mannino, P. A. Stolk, et al.F. Roozeboom, H. G. A. Huizing, J. G. M. van Berkum, F. Cristiano, A. Claverie, M. Jaraíz posted to physrev by rice on 2008-06-21 05:33:45 as
	Fermi-Level-Pinning Defects in Highly n-Doped Silicon [My Copy] Physical Review Letters, Vol. 79, No. 24. (15 December 1997), 4834. by D. J. Chadi, P. H. Citrin, C. H. Park, D. L. Adler, M. A. Marcus, H. J. Gossmann posted to physrev by rice on 2008-06-21 05:33:44 as
	Electron Photoinjection from Silicon to Ultrathin SiO2 Films via Ambient Oxygen [My Copy] Physical Review Letters, Vol. 77, No. 5. (29 July 1996), 920. by J. Bloch, J. G. Mihaychuk, H. M. van Driel posted to physrev by rice on 2008-06-21 05:33:41 as
	Non-Gaussian Transport Measurements and the Einstein Relation in Amorphous Silicon [My Copy] Physical Review Letters, Vol. 76, No. 17. (22 April 1996), 3196. by Qing Gu, E. A. Schiff, S. Grebner, F. Wang, R. Schwarz posted to physrev by rice on 2008-06-21 05:33:40 as
	Trap-Limited Migration of Si Self-Interstitials at Room Temperature [My Copy] Physical Review Letters, Vol. 76, No. 9. (26 February 1996), 1493. by Kyllesbech, V. Privitera, S. Coffa, F. Priolo, S. U. Campisano, A. Carnera posted to physrev by rice on 2008-06-21 05:33:39 as
	Defect production and annealing in ion-implanted amorphous silicon [My Copy] Physical Review Letters, Vol. 70, No. 24. (14 June 1993), 3756. by S. Coffa, F. Priolo, A. Battaglia posted to physrev by rice on 2008-06-21 05:33:37 as

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