Damage formed by ion implantation in silicon evaluated by displaced atom density and thermal wave signal

@article{citeulike:2763730, abstract = {View This Record in Scopus}, author = {Hara, Tohru and Takahashi, Shuya and Hagiwara, Hiroyuki and Hiyoshi, Jun and Smith, Lee W. and Welles, C. and Hahn, S. K. and Larson, L. and Wong, C. C. D. }, citeulike-article-id = {2763730}, journal = {Applied Physics Letters}, keywords = {apl}, number = {13}, pages = {1315--1317}, posted-at = {2008-05-07 06:34:09}, priority = {2}, publisher = {AIP}, title = {Damage formed by ion implantation in silicon evaluated by displaced atom density and thermal wave signal}, url = {http://scitation.aip.org/getabs/servlet/GetabsServlet?prog=normal\&id=APPLAB000055000013001315000001\&idtype=cvips\&gifs=yes}, volume = {55}, year = {1989} }

TY - JOUR ID - citeulike:2763730 L3 - citeulike-article-id:2763730 TI - Damage formed by ion implantation in silicon evaluated by displaced atom density and thermal wave signal JF - Applied Physics Letters VL - 55 IS - 13 SP - 1315 EP - 1317 PB - AIP N2 - View This Record in Scopus KW - apl AU - Hara, Tohru AU - Takahashi, Shuya AU - Hagiwara, Hiroyuki AU - Hiyoshi, Jun AU - Smith, Lee AU - Welles, C AU - Hahn, SK AU - Larson, L AU - Wong, CCD PY - 1989/// UR - http://scitation.aip.org/getabs/servlet/GetabsServlet?prog=normal&id=APPLAB000055000013001315000001&idtype=cvips&gifs=yes ER -