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rice's apl [423 articles]

Recent papers added to rice's library classified by the tag apl. You can also see everyone's apl.
  • Determination of the carrier concentration in InGaAsN/GaAs single quantum wells using Raman scattering
    Applied Physics Letters, Vol. 85, No. 21. (2004), pp. 4905-4907.
    by Patrick A Grandt, Aureus E Griffith, MO Manasreh, DJ Friedman, S Dogan, D Johnstone
    posted to apl by rice on 2008-06-30 16:39:31 as **
  • Oxygen effects on arsenic diffusion in silicon dioxide
    Applied Physics Letters, Vol. 32, No. 2. (1978), pp. 117-119.
    by Katsuhiro Tsukamoto, Yoichi Akasaka, Kazuo Horie
    posted to apl by rice on 2008-06-30 16:39:29 as **
  • Characterization of cesium diffusion in silicon dioxide films using backscattering spectrometry
    Applied Physics Letters, Vol. 50, No. 17. (1987), pp. 1200-1202.
    by Bruce J Fishbein, James D Plummer
    posted to apl by rice on 2008-06-30 16:39:27 as **
  • Fast diffusion component of ion-implanted arsenic in thermally grown silicon dioxide
    Applied Physics Letters, Vol. 53, No. 3. (1988), pp. 189-191.
    by Tong S Lee, P Fellinger
    posted to apl by rice on 2008-06-30 16:39:26 as **
  • Rapid thermal anneal of hydrogen-implanted metal-silicon nitride-silicon dioxide-silicon structure
    Applied Physics Letters, Vol. 56, No. 14. (1990), pp. 1336-1338.
    by BS Panwar, AB Bhattacharyya
    posted to apl by rice on 2008-06-30 16:39:25 as **
  • Multimodal impurity redistribution and nanocluster formation in Ge implanted silicon dioxide films
    Applied Physics Letters, Vol. 71, No. 22. (1997), pp. 3215-3217.
    by J von Borany, R Grötzschel, KH Heinig, A Markwitz, W Matz, B Schmidt, W Skorupa
    posted to apl by rice on 2008-06-30 16:39:24 as **
  • Infrared studies of silicon oxide formation in silicon wafers implanted with oxygen
    Applied Physics Letters, Vol. 72, No. 22. (1998), pp. 2853-2855.
    by Haruhiko Ono, Taeko Ikarashi, Atsushi Ogura
    posted to apl by rice on 2008-06-30 16:39:23 as **
  • Room-temperature, short-wavelength (400--500 nm) photoluminescence from silicon-implanted silicon dioxide films
    Applied Physics Letters, Vol. 68, No. 17. (1996), pp. 2410-2412.
    by W Skorupa, RA Yankov, IE Tyschenko, H Fröb, T Böhme, K Leo
    posted to apl by rice on 2008-06-30 16:39:22 as **
  • Strong blue and violet photoluminescence and electroluminescence from germanium-implanted and silicon-implanted silicon-dioxide layers
    Applied Physics Letters, Vol. 71, No. 19. (1997), pp. 2809-2811.
    by L Rebohle, J von Borany, RA Yankov, W Skorupa, IE Tyschenko, H Fröb, K Leo
    posted to apl by rice on 2008-06-30 16:39:21 as **
  • MEASUREMENT OF DIFFUSED SEMICONDUCTOR SURFACE CONCENTRATIONS BY INFRARED PLASMA REFLECTION
    Applied Physics Letters, Vol. 9, No. 12. (1966), pp. 432-434.
    by EE Gardner, W Kappallo, CR Gordon
    posted to apl by rice on 2008-05-07 08:54:21 as **
  • Accurate measurement of extremely low surface recombination velocities on charged, oxidized silicon surfaces using a simple metal-oxide-semiconductor structure
    Applied Physics Letters, Vol. 90, No. 4. (2007)
    by WE Jellett, KJ Weber
    posted to apl by rice on 2008-05-07 08:53:05 as **
  • Back side thermal imaging of integrated circuits at high spatial resolution
    Applied Physics Letters, Vol. 90, No. 17. (2007)
    by G Tessier, M Bardoux, C Boué, C Filloy, D Fournier
    posted to apl by rice on 2008-05-07 08:52:58 as **
  • Evaluation of UV absorption coefficient in laser-modified fused silica
    Applied Physics Letters, Vol. 90, No. 6. (2007)
    by RA Negres, MW Burke, SB Sutton, P Demange, MD Feit, SG Demos
    posted to apl by rice on 2008-05-07 08:52:49 as **
  • Luminescence properties of wurtzite AlN nanotips
    Applied Physics Letters, Vol. 89, No. 16. (2006)
    by Shih C Shi, Chia F Chen, Surojit Chattopadhyay, Kuei H Chen, Bo W Ke, Li C Chen, Laima Trinkler, Baiba Berzina
    posted to apl by rice on 2008-05-07 08:48:58 as **
  • Comparison of luminescence imaging and illuminated lock-in thermography on silicon solar cells
    Applied Physics Letters, Vol. 89, No. 22. (2006)
    by Martin Kasemann, Martin C Schubert, Manuel The, Mariana Köber, Martin Hermle, Wilhelm Warta
    posted to apl by rice on 2008-05-07 08:48:55 as **
  • Growth and photoluminescence studies of Zn-doped AlN epilayers
    Applied Physics Letters, Vol. 89, No. 19. (2006)
    by N Nepal, ML Nakarmi, HU Jang, JY Lin, HX Jiang
    posted to apl by rice on 2008-05-07 08:48:52 as **
  • Photoluminescence response of ion-implanted silicon
    Applied Physics Letters, Vol. 89, No. 18. (2006)
    by Ruth E Harding, Gordon Davies, S Hayama, PG Coleman, CP Burrows, Wong J Leung
    posted to apl by rice on 2008-05-07 08:48:50 as **
  • Growth and photoluminescence studies of Al-rich AlN/Al[sub x]Ga[sub 1 - x]N quantum wells
    Applied Physics Letters, Vol. 89, No. 13. (2006)
    by Al TM Tahtamouni, N Nepal, JY Lin, HX Jiang, WW Chow
    posted to apl by rice on 2008-05-07 08:48:40 as **
  • Ultraviolet photoluminescence from Gd-implanted AlN epilayers
    Applied Physics Letters, Vol. 89, No. 15. (2006)
    by JM Zavada, N Nepal, JY Lin, HX Jiang, E Brown, U Hömmerich, J Hite, GT Thaler, CR Abernathy, SJ Pearton, R Gwilliam
    posted to apl by rice on 2008-05-07 08:48:37 as **
  • Real-time optical spectroscopy study of solid-phase crystallization in hydrogenated amorphous silicon
    Applied Physics Letters, Vol. 89, No. 12. (2006)
    by P Stradins, DL Young, Y Yan, E Iwaniczko, Y Xu, RC Reedy, HM Branz, Qi Wang
    posted to apl by rice on 2008-05-07 08:48:24 as **
  • Electronic transport characterization of silicon wafers by laterally resolved free-carrier absorption and multiparameter fitting
    Applied Physics Letters, Vol. 89, No. 11. (2006)
    by Xiren Zhang, Bincheng Li, Chunming Gao
    posted to apl by rice on 2008-05-07 08:48:22 as **
  • Photoluminescence studies of impurity transitions in AlGaN alloys
    Applied Physics Letters, Vol. 89, No. 9. (2006)
    by N Nepal, ML Nakarmi, JY Lin, HX Jiang
    posted to apl by rice on 2008-05-07 08:48:20 as **
  • Enhanced zero-order transmission of terahertz radiation pulses through very deep metallic gratings with subwavelength slits
    Applied Physics Letters, Vol. 89, No. 4. (2006)
    by Qirong Xing, Shuxin Li, Zhen Tian, Dong Liang, Ning Zhang, Liying Lang, Lu Chai, Qingyue Wang
    posted to apl by rice on 2008-05-07 08:44:42 as **
  • Surface recombination velocity in Si wafers by photoinduced thermal emission
    Applied Physics Letters, Vol. 89, No. 5. (2006)
    by V Malyutenko, S Chyrchyk
    posted to apl by rice on 2008-05-07 08:43:12 as **
  • Photoluminescence imaging of silicon wafers
    Applied Physics Letters, Vol. 89, No. 4. (2006)
    by T Trupke, RA Bardos, MC Schubert, W Warta
    posted to apl by rice on 2008-05-07 08:43:09 as **
  • On the photoluminescence from Si nanocrystals in Er-doped silica by a double-pulse technique
    Applied Physics Letters, Vol. 89, No. 4. (2006)
    by E Borsella, M Falconieri, F Gourbilleau, R Rizk
    posted to apl by rice on 2008-05-07 08:43:08 as **
  • Phase change observation in reflection multilayers by total electron yield and reflection spectra
    Applied Physics Letters, Vol. 89, No. 2. (2006)
    by Takeo Ejima, Tetsuo Harada, Atsushi Yamazaki
    posted to apl by rice on 2008-05-07 08:43:03 as **
  • Optical luminescence from alkyl-passivated Si nanocrystals under vacuum ultraviolet excitation: Origin and temperature dependence of the blue and orange emissions
    Applied Physics Letters, Vol. 88, No. 26. (2006)
    by Y Chao, A Houlton, BR Horrocks, MRC Hunt, NRJ Poolton, J Yang, L siller
    posted to apl by rice on 2008-05-07 08:43:01 as **
  • Wavelength-selective enhancement of the intensity of visible photoluminescence in hydrogen-ion-implanted silicon-on-insulator structures annealed under high pressure
    Applied Physics Letters, Vol. 89, No. 1. (2006)
    by IE Tyschenko, KS Zhuravlev, AG Cherkov, VP Popov, A Misiuk, RA Yankov
    posted to apl by rice on 2008-05-07 08:43:01 as **
  • Higher lying conduction band in GaN and AlN probed by photoluminescence spectroscopy
    Applied Physics Letters, Vol. 88, No. 26. (2006)
    by N Nepal, KB Nam, J Li, ML Nakarmi, JY Lin, HX Jiang
    posted to apl by rice on 2008-05-07 08:42:56 as **
  • Near-infrared photoluminescence from vertical InN nanorod arrays grown on silicon: Effects of surface electron accumulation layer
    Applied Physics Letters, Vol. 88, No. 25. (2006)
    by CH Shen, HY Chen, HW Lin, S Gwo, AA Klochikhin, Yu
    posted to apl by rice on 2008-05-07 08:42:54 as **
  • Effect of lightly Si doping on the minority carrier diffusion length in n-type GaN films
    Applied Physics Letters, Vol. 88, No. 25. (2006)
    by DG Zhao, DS Jiang, Hui Yang, JJ Zhu, ZS Liu, SM Zhang, JW Liang, XP Hao, L Wei, X Li, XY Li, HM Gong
    posted to apl by rice on 2008-05-07 08:42:52 as **
  • Effects of n-type doping on active Fe sites in ion implanted Fe in InP
    Applied Physics Letters, Vol. 88, No. 25. (2006)
    by Amore A Bonapasta, F Filippone, A Gasparotto, T Cesca
    posted to apl by rice on 2008-05-07 08:38:34 as **
  • Structural analysis of cubic boron nitride films by ultraviolet Raman spectroscopy
    Applied Physics Letters, Vol. 88, No. 24. (2006)
    by KM Leung, HQ Li, YS Zou, KL Ma, YM Chong, Q Ye, WJ Zhang, ST Lee, I Bello
    posted to apl by rice on 2008-05-07 08:38:25 as **
  • Neutron-enhanced annealing of radiation damage formed by self-ion implantation in silicon
    Applied Physics Letters, Vol. 88, No. 24. (2006)
    by A Kinomura, A Chayahara, Y Mokuno, N Tsubouchi, Y Horino, T Yoshiie, Y Hayashi, Q Xu, Y Ito, R Ishigami, K Yasuda
    posted to apl by rice on 2008-05-07 08:38:22 as **
  • Role of edge dislocations in enhancing the yellow luminescence of n-type GaN
    Applied Physics Letters, Vol. 88, No. 24. (2006)
    by DG Zhao, DS Jiang, Hui Yang, JJ Zhu, ZS Liu, SM Zhang, JW Liang, X Li, XY Li, HM Gong
    posted to apl by rice on 2008-05-07 08:38:20 as **
  • Room-temperature photoluminescence of ZnO/MgO multiple quantum wells on Si (001) substrates
    Applied Physics Letters, Vol. 88, No. 22. (2006)
    by CW Sun, P Xin, ZW Liu, QY Zhang
    posted to apl by rice on 2008-05-07 08:38:18 as **
  • Polarization-resolved photoluminescence study of individual GaN nanowires grown by catalyst-free molecular beam epitaxy
    Applied Physics Letters, Vol. 88, No. 21. (2006)
    by John B Schlager, Norman A Sanford, Kris A Bertness, Joy M Barker, Alexana Roshko, Paul T Blanchard
    posted to apl by rice on 2008-05-07 08:38:16 as **
  • Quasi-one-dimensional quantum well on Si(100) surface crafted by using scanning tunneling microscopy tip
    Applied Physics Letters, Vol. 88, No. 20. (2006)
    by Keisuke Sagisaka, Daisuke Fujita
    posted to apl by rice on 2008-05-07 08:38:14 as **
  • Probing carrier dynamics in implanted and annealed polycrystalline silicon thin films using white light
    Applied Physics Letters, Vol. 88, No. 18. (2006)
    by Emmanouil Lioudakis, Andreas Othonos, AG Nassiopoulou
    posted to apl by rice on 2008-05-07 08:38:12 as **
  • Defect characterization of Si-doped GaN films by a scanning near-field optical microscope-induced photoluminescence
    Applied Physics Letters, Vol. 88, No. 16. (2006)
    by M Yoshikawa, R Sugie, M Murakami, T Matsunobe, K Matsuda, H Ishida
    posted to apl by rice on 2008-05-07 08:38:07 as **
  • Deep ultraviolet photoluminescence studies of AlN photonic crystals
    Applied Physics Letters, Vol. 88, No. 13. (2006)
    by N Nepal, J Shakya, ML Nakarmi, JY Lin, HX Jiang
    posted to apl by rice on 2008-05-07 08:35:40 as **
  • Photoluminescence of Ge/Si structures grown on oxidized Si surfaces
    Applied Physics Letters, Vol. 88, No. 12. (2006)
    by AA Shklyaev, S Nobuki, S Uchida, Y Nakamura, M Ichikawa
    posted to apl by rice on 2008-05-07 08:32:15 as **
  • Influence of the cavity on the low-temperature photoluminescence of SiGe/Si multiquantum wells grown on a silicon-on-insulator substrate
    Applied Physics Letters, Vol. 88, No. 12. (2006)
    by CB Li, BW Cheng, YH Zuo, AP Morrison, JZ Yu, QM Wang
    posted to apl by rice on 2008-05-07 08:32:13 as **
  • Light emission from Si nanoclusters formed at low temperatures
    Applied Physics Letters, Vol. 88, No. 10. (2006)
    by XD Pi, OHY Zalloum, T Roschuk, J Wojcik, AP Knights, P Mascher, PJ Simpson
    posted to apl by rice on 2008-05-07 08:32:03 as **
  • Controlling defect and Si nanoparticle luminescence from silicon oxynitride films with CO[sub 2] laser annealing
    Applied Physics Letters, Vol. 88, No. 9. (2006)
    by Anuranjita Tewary, Rohan D Kekatpure, Mark L Brongersma
    posted to apl by rice on 2008-05-07 08:31:54 as **
  • Low-frequency active surface plasmon optics on semiconductors
    Applied Physics Letters, Vol. 88, No. 8. (2006)
    by Gómez J Rivas, M Kuttge, H Kurz, Haring P Bolivar, Sánchez JA Gil
    posted to apl by rice on 2008-05-07 08:31:52 as **
  • Photoluminescent silicon nanocrystals synthesized by reactive laser ablation
    Applied Physics Letters, Vol. 88, No. 7. (2006)
    by Daria Riabinina, Christophe Durand, Mohamed Chaker, Federico Rosei
    posted to apl by rice on 2008-05-07 08:31:49 as **
  • Luminescence properties of highly Si-doped AlN
    Applied Physics Letters, Vol. 88, No. 7. (2006)
    by E Monroy, J Zenneck, G Cherkashinin, O Ambacher, M Hermann, M Stutzmann, M Eickhoff
    posted to apl by rice on 2008-05-07 08:31:47 as **
  • Imaging of domain wall motion in small magnetic particles through near-field microscopy
    Applied Physics Letters, Vol. 88, No. 6. (2006)
    by Jeroen Schoenmaker, Antonio, Yves Souche, Antonio C Seabra, Luiz C Sampaio
    posted to apl by rice on 2008-05-07 08:31:45 as **
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