Dry development of sub-0.25 mu m features patterned with 193 nm silylation resist Export

@inproceedings{citeulike:1616709, abstract = {The dry development of sub-0.25 \µm silylated resist features patterned at 193 nm was optimized in an oxygen plasma using a high-ion-density plasma etcher. Low pressure and low wafer temperature eliminate lateral resist loss, resulting in vertical profiles, linewidth fidelity, and large process latitudes for 0.175 \µm silylated resist features. \©1996 American Vacuum Society}, author = {Palmateer, S. C. and Forte, A. R. and Kunz, R. R. and Horn, M. W.}, citeulike-article-id = {1616709}, citeulike-linkout-0 = {http://scitation.aip.org/getabs/servlet/GetabsServlet?prog=normal&id=JVTAD6000014000003001132000001&idtype=cvips&gifs=yes}, citeulike-linkout-1 = {http://link.aip.org/link/?JVA/14/1132}, citeulike-linkout-2 = {http://dx.doi.org/10.1116/1.580282}, doi = {10.1116/1.580282}, journal = {The 42nd national symposium of the American Vacuum Society}, keywords = {193nm, development, dry, fabrication, lithography, patterns, photolithography, photoresist, resist, silylation, submicron}, number = {3}, pages = {1132--1136}, posted-at = {2007-09-03 21:29:55}, priority = {2}, publisher = {AVS}, title = {Dry development of sub-0.25 mu m features patterned with 193 nm silylation resist}, url = {http://dx.doi.org/10.1116/1.580282}, volume = {14}, year = {1996} }

TY - CONF ID - citeulike:1616709 L3 - citeulike-article-id:1616709 N2 - The dry development of sub-0.25 µm silylated resist features patterned at 193 nm was optimized in an oxygen plasma using a high-ion-density plasma etcher. Low pressure and low wafer temperature eliminate lateral resist loss, resulting in vertical profiles, linewidth fidelity, and large process latitudes for 0.175 µm silylated resist features. ©1996 American Vacuum Society IS - 3 JF - The 42nd national symposium of the American Vacuum Society EP - 1136 TI - Dry development of sub-0.25 mu m features patterned with 193 nm silylation resist PB - AVS VL - 14 SP - 1132 KW - 193nm KW - development KW - dry KW - fabrication KW - lithography KW - patterns KW - photolithography KW - photoresist KW - resist KW - silylation KW - submicron AU - Palmateer, SC AU - Forte, AR AU - Kunz, RR AU - Horn, MW PY - 1996/// UR - http://dx.doi.org/10.1116/1.580282 ER -