On-chip electrometer using MEMS parallel-plate pull-in sensing Export

@article{citeulike:3923017, abstract = {Microelectromechanical Systems \&\#40;MEMS\&\#41; have been proposed as DC electrical metrology references. The design reported here is the first to enhance the qualities of a MEMS DC reference with potential tuning and sensing via an isolated and monolithically integrated MEMS technology and thereby, convert a stable parallel-plate voltage reference to a simple, sensitive, low-burden voltage sensor. This on-chip system reliably measures unknown potentials ranging from \&\#38;\&\#35;8722;60 to 60V with sampling times less than 10 ms. In the initial design, the system is used to measure atto-amp leakage current though 10 P\&\#38;\&\#35;937;, suspended, MEMS isolation.}, author = {Webb, Russell Y. and Macdonald, Noel C.}, citeulike-article-id = {3923017}, citeulike-linkout-0 = {http://dx.doi.org/10.1504/IJISTA.2007.014132}, citeulike-linkout-1 = {http://www.ingentaconnect.com/content/ind/ijista/2007/00000003/F0020001/art00011}, doi = {10.1504/IJISTA.2007.014132}, issn = {1740-8865}, journal = {International Journal of Intelligent Systems Technologies and Applications}, keywords = {mems, ryw}, month = {June}, pages = {149--162}, posted-at = {2009-01-22 06:05:23}, priority = {2}, publisher = {Inderscience Publishers}, title = {On-chip electrometer using MEMS parallel-plate pull-in sensing}, url = {http://dx.doi.org/10.1504/IJISTA.2007.014132}, year = {2007} }

TY - JOUR ID - citeulike:3923017 L3 - citeulike-article-id:3923017 N2 - Microelectromechanical Systems (MEMS) have been proposed as DC electrical metrology references. The design reported here is the first to enhance the qualities of a MEMS DC reference with potential tuning and sensing via an isolated and monolithically integrated MEMS technology and thereby, convert a stable parallel-plate voltage reference to a simple, sensitive, low-burden voltage sensor. This on-chip system reliably measures unknown potentials ranging from −60 to 60V with sampling times less than 10 ms. In the initial design, the system is used to measure atto-amp leakage current though 10 PΩ, suspended, MEMS isolation. JF - International Journal of Intelligent Systems Technologies and Applications SN - 1740-8865 EP - 162 TI - On-chip electrometer using MEMS parallel-plate pull-in sensing PB - Inderscience Publishers SP - 149 KW - mems KW - ryw AU - Webb, Russell AU - Macdonald, Noel PY - 2007/06// UR - http://dx.doi.org/10.1504/IJISTA.2007.014132 ER -