Epitaxial growth of ZnO film on Si(1 1 1) with CeO2(1 1 1) as buffer layer

ZnO(0 0 2) epitaxial films have been successfully grown on Si(1 1 1) with CeO 2 as a buffer layer by pulsed laser deposition. In spite of large lattice mismatch between ZnO and CeO 2 , good film quality was achieved, as proven by Fourier filtered high-resolution transmission electron microscopy (HRTEM) image, due to reduction in interface strain by domain matching epitaxy. The epitaxial relationship of ZnO and CeO 2 on the Si substrate was determined to be (0 0 2)[2 1 0] ZnO ||(1 1 1)[1 1 2] (1 1 1)[1 1 2] Si . The HRTEM images show low defect concentrations in both the deposited ZnO film and CeO 2 layer. Ordered crack lines are observed on the surface of the ZnO film which are due to A-type and B-type stackings of CeO 2 on Si(1 1 1). Sharp near-band edge emission at 3.253 eV was detected for the ZnO film through photoluminiscence measurement at room temperature.