Attenuation and escape depths of low-energy electron emission

@article{citeulike:2729682, abstract = {Electron transport and emission is simulated by two Monte Carlo (MC) programs. The first version is based on elastic Mott cross sections and inelastic loss functions with full dispersion [Delta]E=[Plancks over 2pi][omega](q), including electron impact and subsequent cascading processes. Surface effects like surface plasmons and the quantum mechanical surface transmittivity have been taken into account too. Especially for dielectric materials like SiO2 and applied electric fields a second MC version is developed based on the electron scattering with acoustic and optical phonons, intra- and intervalley scattering and impact valence band ionization. A comparison of both versions results in a good agreement still in the energy region of several eV, but a predominance of the phonon-based second version is found for very low electron energies, e.g., for hot and ballistic electrons in dielectric materials.}, author = {Fitting and Schreiber, E. and Kuhr and von Czarnowski, A. }, citeulike-article-id = {2729682}, doi = {http://dx.doi.org/10.1016/S0368-2048(01)00232-8}, journal = {Journal of Electron Spectroscopy and Related Phenomena}, keywords = {curve, electron, free, imfp, inelastic, mean, path, scattering, universal}, month = {July}, number = {1}, pages = {35--47}, posted-at = {2008-04-28 12:10:22}, priority = {2}, title = {Attenuation and escape depths of low-energy electron emission}, url = {http://dx.doi.org/10.1016/S0368-2048(01)00232-8}, volume = {119}, year = {2001} }

TY - JOUR ID - citeulike:2729682 L3 - citeulike-article-id:2729682 TI - Attenuation and escape depths of low-energy electron emission JF - Journal of Electron Spectroscopy and Related Phenomena VL - 119 IS - 1 SP - 35 EP - 47 N2 - Electron transport and emission is simulated by two Monte Carlo (MC) programs. The first version is based on elastic Mott cross sections and inelastic loss functions with full dispersion [Delta]E=[Plancks over 2pi][omega](q), including electron impact and subsequent cascading processes. Surface effects like surface plasmons and the quantum mechanical surface transmittivity have been taken into account too. Especially for dielectric materials like SiO2 and applied electric fields a second MC version is developed based on the electron scattering with acoustic and optical phonons, intra- and intervalley scattering and impact valence band ionization. A comparison of both versions results in a good agreement still in the energy region of several eV, but a predominance of the phonon-based second version is found for very low electron energies, e.g., for hot and ballistic electrons in dielectric materials. KW - curve KW - electron KW - free KW - imfp KW - inelastic KW - mean KW - path KW - scattering KW - universal AU - Fitting AU - Schreiber, E AU - Kuhr AU - von Czarnowski, A PY - 2001/07// UR - http://dx.doi.org/10.1016/S0368-2048(01)00232-8 ER -