Structural and electrical properties of highly oriented Pb(Zr,Ti)O3 thin films deposited by facing target sputtering
The Pb(Zr,Ti)O3 thin films with single (111) oriented perovskite phase and excellent electrical properties have been prepared by annealing the as-deposited samples. The orientation of crystals depends strongly on both the deposition temperature and annealing temperature. The sample annealed at 606°C has the best (111) orientation. When the sample is annealed at lower temperature, the relative content of (111) oriented perovskite phase decreases quickly with increase of deposition temperature. The deposition temperature has little effects on the orientation when the sample is annealed at higher temperature. The effects of deposition temperature and annealing temperature on the crystallographic structures and electrical properties of PZT thin films were investigated in this paper. The sample deposited at 285°C and annealed at 606°C has the maximum value of polarization, which displays excellent ferroelectric properties. The typical Pr and Ps values are 57 and 101 Î¼C/cm2, respectively.