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First-layer Si metallizations for thermally stable and smooth Ohmic contacts for AlGaN∕GaN high electron mobility transistors

by: Fitih M. Mohammed, Liang Wang, Ilesanmi Adesida
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 25, No. 2. (2007), 324, doi:10.1116/1.2437161  Key: citeulike:11462178

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