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Current conduction mechanism of Si/Ti-based Ohmic contacts to n-GaN

by: Dae W. Kim, Hong K. Baik
Applied Physics Letters, Vol. 77, No. 7. (2000), pp. 1011-1013, doi:10.1063/1.1289057  Key: citeulike:11462247

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Abstract

We have investigated the Ohmic contact formation mechanism of Si/Ti-based contacts to n-GaN. The Si/Ti contact system was selected because Ti silicides have a low work function and also Si has been used widely as an n-type dopant. Our experimental results show that the Ohmic behavior of Si/Ti-based contacts were attributed to the low barrier height of the Ti silicide/GaN interface. The contact resistance of Si/Ti-based Ohmic contacts decreased exponentially with the measuring temperature. It can be concluded that current flows over the low barrier height by thermionic emission. © 2000 American Institute of Physics.


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