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Si-induced enhancement of ohmic performance of Ti/Al/Mo/Au metallisation for AlGaN/GaN HEMTs

by: F. M. Mohammed, L. Wang, H. J. Koo, I. Adesida
Electronics Letters, Vol. 41, No. 17. (August 2005), pp. 984-985, doi:10.1049/el:20051849  Key: citeulike:11462249

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Abstract

Incorporation of Si is shown to induce an improvement in the ohmic performance of Ti/Al/Mo/Au metallisation on MOCVD-grown AlGaN/GaN heterostructures. Optimised contact resistance (R


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