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Nuclear Science, IEEE Transactions on, Vol. 53, No. 6. (December 2006), pp. 3379-3385, doi:10.1109/tns.2006.884971 Key: citeulike:11968031
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Analyses of quasi-stationary avalanche simulations on radiation-hardened power MOSFETs suggest that the single-event burnout (SEB) failure is determined by the device's avalanche characteristics and confirm SEB failure mechanism is due to the turn-on of parasitic bipolar transistor. The heavy ion beam is only acting as a trigger. Simulation results on various 600 V and 250 V radiation-hardened power MOSFETs from International Rectifier are compared to an extensive set of single event effect test results and prove quasi-stationary avalanche simulation is capable of evaluating and predicting SEB susceptibility
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