Oxide–Nitride–Oxide Capacitor Reliability Under Heavy-Ion Irradiation
We investigate heavy ion irradiation effects on large area capacitors with an oxide-nitride-oxide (ONO) stack as dielectric. Despite the thickness of this stack (16.5 nm), we observe the onset of a leakage current after irradiation. We demonstrate that this leakage current is a truly DC current that flows through the ONO stack and decreases with time. Electrical stresses demonstrate that irradiation does not reduce the time-to-breakdown of these devices. Noticeably, capacitors with a 9-nm layer as dielectric and irradiated with the same ion specie and with the same fluence do not show any measurable leakage current.