Ferroelectric thin films on silicon carbide for next-generation nonvolatile memory and sensor devices Export

@article{citeulike:423679, abstract = {Silicon carbide semiconductor technology has emerged as a very good candidate to replace traditional Si devices in special applications such as low loss power switching and high temperature electronics. Ferroelectric thin films exhibit interesting properties for use in semiconductor technology due to the spontaneous polarization which can be switched by an externally applied electric field, and thus are attractive for nonvolatile memory and sensor applications. In this work, the successful realization of ferroelectric thin films in SiC devices is described. The first experimental prototype devices are presented and discussed: A novel integration technique of junction metal-oxide-semiconductor field effect transistors (JMOSFETs) and nonvolatile FETs (NVFETs) on a single 4H-SiC substrate is presented. A constant current control device is based on the SiC JMOSFET. The drain current is effectively controlled and kept constant by a buried junction gate. A new high temperature SiC NVFET with a similar temperature stable current drive is also demonstrated. The nonvolatile memory device, based on the ferroelectric gate stack, was shown to operate up to 300 [deg]C with memory effect retained up to 200 [deg]C.}, author = {Ostling, Mikael and Koo, Sang-Mo and Zetterling, Carl-Mikael and Khartsev, Sergey and Grishin, Alex}, citeulike-article-id = {423679}, citeulike-linkout-0 = {http://dx.doi.org/10.1016/j.tsf.2004.09.030}, citeulike-linkout-1 = {http://www.sciencedirect.com/science/article/B6TW0-4DNRT75-H/2/6dd4ceff80ee72fe865a1684ff30f1cf}, day = {22}, doi = {10.1016/j.tsf.2004.09.030}, journal = {Thin Solid Films}, keywords = {ferroelectric, memory, nonvolatile, sensor}, month = {December}, pages = {444--449}, posted-at = {2005-12-06 22:24:02}, priority = {2}, title = {Ferroelectric thin films on silicon carbide for next-generation nonvolatile memory and sensor devices}, url = {http://dx.doi.org/10.1016/j.tsf.2004.09.030}, volume = {469-470}, year = {2004} }

TY - JOUR ID - citeulike:423679 L3 - citeulike-article-id:423679 N2 - Silicon carbide semiconductor technology has emerged as a very good candidate to replace traditional Si devices in special applications such as low loss power switching and high temperature electronics. Ferroelectric thin films exhibit interesting properties for use in semiconductor technology due to the spontaneous polarization which can be switched by an externally applied electric field, and thus are attractive for nonvolatile memory and sensor applications. In this work, the successful realization of ferroelectric thin films in SiC devices is described. The first experimental prototype devices are presented and discussed: A novel integration technique of junction metal-oxide-semiconductor field effect transistors (JMOSFETs) and nonvolatile FETs (NVFETs) on a single 4H-SiC substrate is presented. A constant current control device is based on the SiC JMOSFET. The drain current is effectively controlled and kept constant by a buried junction gate. A new high temperature SiC NVFET with a similar temperature stable current drive is also demonstrated. The nonvolatile memory device, based on the ferroelectric gate stack, was shown to operate up to 300 [deg]C with memory effect retained up to 200 [deg]C. JF - Thin Solid Films EP - 449 TI - Ferroelectric thin films on silicon carbide for next-generation nonvolatile memory and sensor devices VL - 469-470 SP - 444 KW - ferroelectric KW - memory KW - nonvolatile KW - sensor AU - Ostling, Mikael AU - Koo, Sang-Mo AU - Zetterling, Carl-Mikael AU - Khartsev, Sergey AU - Grishin, Alex PY - 2004/12/22/ UR - http://dx.doi.org/10.1016/j.tsf.2004.09.030 ER -