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A high-speed logic LSI using diffusion self-aligned enhancement depletion MOSTSolid-State Circuits Conference. Digest of Technical Papers. 1975 IEEE International, Vol. XVIII (1975), pp. 124-125.
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AbstractSub-nanosecond, sub-picojoule gates with standard photolithographic technology have been realized using a DSAED-MOS ring oscillator. This paper will describe a high-speed (2.9 ns/2pJ) logic LSI, using this unit gate design.
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