A 1.8-V MOSFET-only ΣΔ modulator using substrate biased depletion-mode MOS capacitors in series compensation Export

@article{citeulike:907111, abstract = {A low-voltage high-linearity MOSFET-only \Σ\Δ modulator for speech band applications is presented. The modulator uses substrate biased MOSFETs in the depletion region as capacitors, linearized by a series compensation technique. A second-order fully differential single-loop architecture has been realized in a conventional 0.25-\μm digital n-well CMOS process without extra layers for capacitors. An SNDR of 72 dB and an SNR of 77 dB is obtained with 8-kHz signal bandwidth at an oversampling ratio of 64. The circuit consumes about 1 mW from a single 1.8-V power supply and occupies a core area of 0.08 mm²}, author = {Tille, T. and Sauerbrey, J. and Schmitt-Landsiedel, D.}, citeulike-article-id = {907111}, citeulike-linkout-0 = {http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=933459}, journal = {Solid-State Circuits, IEEE Journal of}, keywords = {depletion, sigma-delta}, number = {7}, pages = {1041--1047}, posted-at = {2006-10-19 20:57:35}, priority = {2}, title = {A 1.8-V MOSFET-only \Σ\Δ modulator using substrate biased depletion-mode MOS capacitors in series compensation}, url = {http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=933459}, volume = {36}, year = {2001} }

TY - JOUR ID - citeulike:907111 L3 - citeulike-article-id:907111 N2 - A low-voltage high-linearity MOSFET-only ΣΔ modulator for speech band applications is presented. The modulator uses substrate biased MOSFETs in the depletion region as capacitors, linearized by a series compensation technique. A second-order fully differential single-loop architecture has been realized in a conventional 0.25-μm digital n-well CMOS process without extra layers for capacitors. An SNDR of 72 dB and an SNR of 77 dB is obtained with 8-kHz signal bandwidth at an oversampling ratio of 64. The circuit consumes about 1 mW from a single 1.8-V power supply and occupies a core area of 0.08 mm² IS - 7 JF - Solid-State Circuits, IEEE Journal of EP - 1047 TI - A 1.8-V MOSFET-only ΣΔ modulator using substrate biased depletion-mode MOS capacitors in series compensation VL - 36 SP - 1041 KW - depletion KW - sigma-delta AU - Tille, T AU - Sauerbrey, J AU - Schmitt-Landsiedel, D PY - 2001/// UR - http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=933459 ER -