An accurate and simple MOSFET model for computer-aided design Export

@article{citeulike:907112, abstract = {Presents accurate device models (8-10 percent) to describe the drain-current characteristics of short-channel (\>1 /spl mu/m) enhancement mode devices (EMD) and ion-implanted depletion-mode devices (DMD). The primary emphasis is on model accuracy and simplicity of formulation. The model form allows efficient extraction of model parameters resulting in accurate description of measured data. Also discussed is a derivation of the model equations with emphasis on a carrier mobility expression which includes the effects of surface scattering, channel scattering, and substrate bias. The effect of intrinsic source and/or drain series resistance on the carrier mobility is also included. The lowering of drain current due to bulk charge in the substrate and current modulation due to short and narrow channel effects and implicitly embedded in the models.}, author = {Hanafi, H. I. and Camnitz, L. H. and Dally, A. J.}, citeulike-article-id = {907112}, citeulike-linkout-0 = {http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=1051835}, journal = {Solid-State Circuits, IEEE Journal of}, keywords = {model, mos}, number = {5}, pages = {882--891}, posted-at = {2006-10-19 20:59:08}, priority = {2}, title = {An accurate and simple MOSFET model for computer-aided design}, url = {http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=1051835}, volume = {17}, year = {1982} }

TY - JOUR ID - citeulike:907112 L3 - citeulike-article-id:907112 N2 - Presents accurate device models (8-10 percent) to describe the drain-current characteristics of short-channel (>1 /spl mu/m) enhancement mode devices (EMD) and ion-implanted depletion-mode devices (DMD). The primary emphasis is on model accuracy and simplicity of formulation. The model form allows efficient extraction of model parameters resulting in accurate description of measured data. Also discussed is a derivation of the model equations with emphasis on a carrier mobility expression which includes the effects of surface scattering, channel scattering, and substrate bias. The effect of intrinsic source and/or drain series resistance on the carrier mobility is also included. The lowering of drain current due to bulk charge in the substrate and current modulation due to short and narrow channel effects and implicitly embedded in the models. IS - 5 JF - Solid-State Circuits, IEEE Journal of EP - 891 TI - An accurate and simple MOSFET model for computer-aided design VL - 17 SP - 882 KW - model KW - mos AU - Hanafi, HI AU - Camnitz, LH AU - Dally, AJ PY - 1982/// UR - http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=1051835 ER -