Threshold voltage characteristics of depletion-mode MOSFET's Export

@article{citeulike:907113, abstract = {This paper presents the results of a study of the characteristics of the depletion-mode MOSFET. In particular, it is shown that the threshold voltage of this device is a function of its mode of operation (linear or saturated) due to a change in dominant conduction mechanisms caused by the finite depth of donor impurities in the channel. The effect of these impurities on the short channel behavior of the devices also is examined.}, author = {Wordeman, M. R. and Dennard, R. H.}, citeulike-article-id = {907113}, citeulike-linkout-0 = {http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=1481631}, journal = {Electron Devices, IEEE Transactions on}, keywords = {depletion, mos, threshold}, number = {9}, pages = {1025--1030}, posted-at = {2006-10-19 20:59:51}, priority = {2}, title = {Threshold voltage characteristics of depletion-mode MOSFET's}, url = {http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=1481631}, volume = {28}, year = {1981} }

TY - JOUR ID - citeulike:907113 L3 - citeulike-article-id:907113 N2 - This paper presents the results of a study of the characteristics of the depletion-mode MOSFET. In particular, it is shown that the threshold voltage of this device is a function of its mode of operation (linear or saturated) due to a change in dominant conduction mechanisms caused by the finite depth of donor impurities in the channel. The effect of these impurities on the short channel behavior of the devices also is examined. IS - 9 JF - Electron Devices, IEEE Transactions on EP - 1030 TI - Threshold voltage characteristics of depletion-mode MOSFET's VL - 28 SP - 1025 KW - depletion KW - mos KW - threshold AU - Wordeman, MR AU - Dennard, RH PY - 1981/// UR - http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=1481631 ER -