A monolithically integrated detector-preamplifier on high-resistivity silicon Export

@article{citeulike:907120, abstract = {A monolithically integrated detector-preamplifier on high-resistivity silicon has been designed, fabricated, and characterized. The detector is a fully depleted p-i-n diode, and the preamplifier is implemented in a depletion-mode PMOS process which is compatible with detector processing. The amplifier is internally compensated, and the measured gain-bandwidth product is 30 MHz with an input-referred noise of 15 nV/\√Hz in the white-noise regime. Measurements with an Am²⁴¹ radiation source yield an equivalent input noise charge of 800 electrons at 200 ns shaping time for a 1.4 mm² detector with on-chip amplifier in an experimental setup with substantial external pickup}, author = {Holland, S. and Spieler, H.}, citeulike-article-id = {907120}, citeulike-linkout-0 = {http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=106663}, journal = {Nuclear Science, IEEE Transactions on}, keywords = {monolithic, preamplifier}, number = {2}, pages = {463--468}, posted-at = {2006-10-19 21:07:13}, priority = {2}, title = {A monolithically integrated detector-preamplifier on high-resistivity silicon}, url = {http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=106663}, volume = {37}, year = {1990} }

TY - JOUR ID - citeulike:907120 L3 - citeulike-article-id:907120 N2 - A monolithically integrated detector-preamplifier on high-resistivity silicon has been designed, fabricated, and characterized. The detector is a fully depleted p-i-n diode, and the preamplifier is implemented in a depletion-mode PMOS process which is compatible with detector processing. The amplifier is internally compensated, and the measured gain-bandwidth product is 30 MHz with an input-referred noise of 15 nV/√Hz in the white-noise regime. Measurements with an Am²⁴¹ radiation source yield an equivalent input noise charge of 800 electrons at 200 ns shaping time for a 1.4 mm² detector with on-chip amplifier in an experimental setup with substantial external pickup IS - 2 JF - Nuclear Science, IEEE Transactions on EP - 468 TI - A monolithically integrated detector-preamplifier on high-resistivity silicon VL - 37 SP - 463 KW - monolithic KW - preamplifier AU - Holland, S AU - Spieler, H PY - 1990/// UR - http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=106663 ER -