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these_morel's library [183 articles]

Recent papers added to these_morel's library.
  • Etude d’électrodes métalliques à base de tungstène, préparées par MOCVD, pour empilement de grille CMOS de technologie sub-65 nmTECHNOLOGIE SUB–65 nm
    (2006)
    by Stéphane Allegret
    posted to tungsten-nitride tungsten deposition by these_morel on 2008-07-24 14:21:01 as **
  • The Deposition of Molybdenum and Tungsten Films from Vapor Decomposition of Carbonyls
    Journal of Electrochemical Society, Vol. 117, No. 5. (1970), pp. 693-700.
    by LH Kaplan, FM D'heurle
    posted to tungsten dispositifs-experimentaux chemical-vapor-deposition by these_morel on 2008-07-24 14:16:14 as **
  • Spectral Library of Persistent Emission Lines.
    (1990)
    by DS Malchow
    posted to dispositifs-experimentaux actinometry by these_morel on 2008-07-23 15:18:24 as **
  • Etude des mécanismes de gravure du Si à basse température par un faisceau plasma de SF6 extrait d'une source d'ions à décharge micro-onde = Study of the etching of Si at low substrate temperature using a SF6 plasma beam extracted from a microwave ion source
    (1998)
    by Thierry Chevolleau
    posted to mass-spectrometry dispositifs-experimentaux by these_morel on 2008-07-23 09:59:49 as **
  • Mass spectrometric detection of reactive neutral species: Beam-to-background ratio
    Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 17, No. 5. (1999), pp. 2447-2455.
    by Harmeet Singh, John W Coburn, David B Graves
    posted to mass-spectrometry dispositifs-experimentaux by these_morel on 2008-07-23 09:52:48 as **
  • Spectrométrie de masse - Principe et appareillage
    Techniques de l'ingénieur, Vol. P2645 (June 2005)
    by Guy Bouchoux, Michel Sablier
    posted to mass-spectrometry dispositifs-experimentaux by these_morel on 2008-07-23 09:47:54 as **
  • Mass spectrometry: Principles and applications
    (14 January 2007)
    by Edmond de Hoffmann
    posted to mass-spectrometry dispositifs-experimentaux by these_morel on 2008-07-23 09:45:12 as **
  • Analyse de surface par ESCA - Analyse élémentaire et applications
    Techniques de l'ingénieur, Vol. P2626 (September 1998)
    by Tran M Duc
    posted to xps dispositifs-experimentaux by these_morel on 2008-07-21 15:17:11 as **
  • Spectroscopies de photoélectrons: XPS ou ESCA et UPS
    Techniques de l'ingénieur, Vol. P2625 (April 1986)
    by Guy Hollinger
    posted to xps dispositifs-experimentaux by these_morel on 2008-07-21 15:14:45 as **
  • Handbook of X Ray Photoelectron Spectroscopy (P/N 624755)
    (1992)
    by John F Moulder, William F Stickle, Peter E Sobol
    posted to xps dispositifs-experimentaux by these_morel on 2008-07-21 15:06:24 as **
  • Practical Surface Analysis: Auger and X-Ray Photoelectron Spectroscopy
    (23 August 1983)
    by D Briggs, MP Seah
    posted to xps dispositifs-experimentaux by these_morel on 2008-07-21 15:01:32 as **
  • Grazing incidence specular reflectivity: theory, experiment, and applications
    Solid State Sciences, Vol. 2, No. 2. (1 May 2000), pp. 257-278.
    by A van der Lee
    posted to xrr dispositifs-experimentaux by these_morel on 2008-07-18 13:43:25 as **
  • Caractérisation des surfaces et des matériaux stratifiés par rayons X
    Techniques de l'ingénieur, Vol. P1085 (January 1996)
    by Pierre Dhez
    posted to xrr dispositifs-experimentaux by these_morel on 2008-07-18 13:41:44 as **
  • Scanning Electron Microscopy and X-ray Microanalysis
    by Joseph Goldstein, Dale E Newbury, David C Joy, Charles E Lyman, Patrick Echlin, Eric Lifshin, LC Sawyer, JR Michael
    posted to meb dispositifs-experimentaux by these_morel on 2008-07-18 13:23:33 as **
  • Microscopie électronique à balayage - Principe et équipement
    Techniques de l'ingénieur, Vol. P865 (March 2006)
    by Claude Le Gressus, Henri Paqueton, Jacky Ruste
    posted to meb dispositifs-experimentaux by these_morel on 2008-07-18 13:20:53 as **
  • Plasma etching: principles, mechanisms, application to micro- and nano-technologies
    Applied Surface Science, Vol. 164, No. 1-4. (1 September 2000), pp. 72-83.
    by Christophe Cardinaud, Marie-Claude Peignon, Pierre-Yves Tessier
    posted to volatility metal introduction by these_morel on 2008-07-18 12:38:24 as **
  • VLSI Fabrication Principles: Silicon and Gallium Arsenide, 2nd Edition
    (14 March 1994)
    by Sorab K Ghandhi
    posted to volatility introduction by these_morel on 2008-07-18 10:44:54 as **
  • Enhancement of the recombination rate of Br atoms by CF[sub 4] addition and resist etching in HBr/Cl[sub 2]/O[sub 2] plasmas
    Journal of Applied Physics, Vol. 94, No. 10. (2003), pp. 6285-6290.
    by G Cunge, O Joubert, N Sadeghi
    posted to introduction cleaning by these_morel on 2008-07-11 15:12:45 as **
  • Effect of chamber wall conditions on Cl and Cl[sub 2] concentrations in an inductively coupled plasma reactor
    Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 20, No. 1. (2002), pp. 43-52.
    by Saurabh J Ullal, Anna R Godfrey, Erik Edelberg, Linda Braly, Vahid Vahedi, Eray S Aydil
    posted to introduction cleaning by these_morel on 2008-07-11 15:11:51 as **
  • Characteristics and mechanism of etch process sensitivity to chamber surface condition
    Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 19, No. 1. (2001), pp. 166-171.
    by Songlin Xu, Zhiwen Sun, Xueyu Qian, John Holland, Dragan Podlesnik
    posted to introduction cleaning by these_morel on 2008-07-11 15:10:19 as **
  • Nanometer scale linewidth control during etching of polysilicon gates in high-density plasmas
    Microelectronic Engineering, Vol. 69, No. 2-4. (September 2003), pp. 350-357.
    by O Joubert, E Pargon, J Foucher, X Detter, G Cunge, L Vallier
    posted to resist-trimming introduction by these_morel on 2008-07-11 13:38:16 as **
  • Resist trimming in high-density CF[sub 4]/O[sub 2] plasmas for sub-0.1 mu m device fabrication
    Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 20, No. 5. (2002), pp. 1974-1981.
    by Chian Y Sin, Bing H Chen, WL Loh, J Yu, P Yelehanka, A See, L Chan
    posted to resist-trimming introduction by these_morel on 2008-07-11 13:35:35 as **
  • Photoresist Trimming: Etch Solutions to CD Uniformity and Tuning
    Semiconductor International (September 2002)
    by Shyam Ramalingam, Chris Lee, Vahid Vahedi
    posted to resist-trimming introduction by these_morel on 2008-07-11 13:34:15 as **
  • Deep-submicrometer MOS device fabrication using a photoresist-ashing technique
    Electron Device Letters, IEEE, Vol. 9, No. 4. (1988), pp. 186-188.
    by J Chung, M Jeng, JE Moon, AT Wu, TY Chan, PK Ko, C Hu
    posted to resist-trimming introduction by these_morel on 2008-07-11 13:24:20 as **
  • Microprofile simulations for plasma etching with surface passivation
    Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 12, No. 5. (1994), pp. 2745-2753.
    by S Hamaguchi, M Dalvie
    posted to plasma passivation introduction by these_morel on 2008-07-10 15:36:20 as **
  • Simulation of surface topography evolution during plasma etching by the method of characteristics
    Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 12, No. 3. (1994), pp. 620-635.
    by John C Arnold, Herbert H Sawin, Manoj Dalvie, Satoshi Hamaguchi
    posted to plasma passivation introduction by these_morel on 2008-07-10 15:35:13 as **
  • Study of sidewall passivation and microscopic silicon roughness phenomena in chlorine-based reactive ion etching of silicon trenches
    Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 8, No. 6. (1990), pp. 1199-1211.
    by GS Oehrlein, JF Rembetski, EH Payne
    posted to plasma passivation introduction by these_morel on 2008-07-10 15:33:25 as **
  • X-ray photoelectron spectroscopy investigation of sidewall passivation films formed during gate etch processes
    Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 19, No. 2. (2001), pp. 420-426.
    by L Desvoivres, L Vallier, O Joubert
    posted to plasma passivation introduction by these_morel on 2008-07-10 15:32:30 as **
  • Polysilicon gate etching in high density plasmas. V. Comparison between quantitative chemical analysis of photoresist and oxide masked polysilicon gates etched in HBr/Cl[sub 2]/O[sub 2] plasmas
    Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 15, No. 1. (1997), pp. 88-97.
    by FH Bell, O Joubert
    posted to plasma passivation introduction by these_morel on 2008-07-10 15:31:39 as **
  • Quantitative chemical topography of polycrystalline Si anisotropically etched in Cl[sub 2]/O[sub 2] high density plasmas
    Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 13, No. 2. (1995), pp. 214-226.
    by KV Guinn, CC Cheng, VM Donnelly
    posted to plasma passivation introduction by these_morel on 2008-07-10 15:30:50 as **
  • Transistor MOS et sa technologie de fabrication
    Technique de l'ingénieur, No. E2430. (February 2000)
    by Thomas Skotnicki
    posted to microelectronics introduction cmos by these_morel on 2008-07-10 13:36:06 as **
  • Physics of Semiconductor Devices
    (04 November 1981)
    by Simon M Sze
    posted to microelectronics introduction cmos by these_morel on 2008-07-10 13:28:17 as ** along with 1 person kristgy
  • Dry etching for pattern transfer
    Journal of Vacuum Science and Technology, Vol. 17, No. 5. (1980), pp. 1177-1183.
    by HW Lehmann, R Widmer
    posted to plasma introduction etching by these_morel on 2008-07-09 10:18:03 as **
  • Role of fluorocarbon film formation in the etching of silicon, silicon dioxide, silicon nitride, and amorphous hydrogenated silicon carbide
    Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 22, No. 1. (2004), pp. 53-60.
    by TEFM Standaert, C Hedlund, EA Joseph, GS Oehrlein, TJ Dalton
    posted to plasma introduction fluorocarbon by these_morel on 2008-07-08 06:56:38 as **
  • Fluorocarbon polymer deposition kinetics in a low-pressure, high-density, inductively coupled plasma reactor
    Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 18, No. 5. (2000), pp. 2122-2129.
    by MJ Sowa, ME Littau, V Pohray, JL Cecchi
    posted to plasma introduction fluorocarbon by these_morel on 2008-07-08 06:55:38 as **
  • The role of polymer deposited in differential dielectric etch
    The 42nd national symposium of the American Vacuum Society, Vol. 14, No. 3. (1996), pp. 1092-1095.
    by S Fang, C Chiang, D Fraser, B Lee, P Keswick, M Chang, K Fung
    posted to plasma introduction fluorocarbon by these_morel on 2008-07-08 06:54:36 as **
  • Theory of Auger Neutralization of Ions at the Surface of a Diamond-Type Semiconductor
    Physical Review, Vol. 122, No. 1. (1 April 1961), 83.
    by Homer D Hagstrum
    posted to plasma introduction by these_morel on 2008-07-08 06:51:12 as **
  • Theory of Sputtering. I. Sputtering Yield of Amorphous and Polycrystalline Targets
    Physical Review, Vol. 184, No. 2. (1969), 383.
    by Peter Sigmund
    posted to plasma introduction by these_morel on 2008-07-08 06:47:24 as **
  • Universal energy dependence of physical and ion-enhanced chemical etch yields at low ion energy
    Applied Physics Letters, Vol. 55 (1989), 1960.
    by Christoph Steinbrüchel
    posted to plasma introduction by these_morel on 2008-07-04 13:43:49 as **
  • Energy dependence of the ion-induced sputtering yields of monatomic solids
    Atomic Data and Nuclear Data Tables, Vol. 31, No. 1. (July 1984), pp. 1-80.
    by Noriaki Matsunami, Yasunori Yamamura, Yukikazu Itikawa, Noriaki Itoh, Yukio Kazumata, Soji Miyagawa, Kenji Morita, Ryuichi Shimizu, Hiroyuki Tawara
    posted to plasma introduction by these_morel on 2008-07-04 13:35:27 as **
  • Control of relative etch rates of SiO2 and Si in plasma etching
    Solid-State Electronics, Vol. 18, No. 12. (December 1975), pp. 1146-1147.
    by Rudolf A Heinecke
    posted to plasma introduction by these_morel on 2008-07-04 09:35:31 as **
  • Mechanisms of silicon etching in fluorine- and chlorine-containing plasmas
    Pure and Applied Chemistry, Vol. 62, No. 9. (1990), pp. 1709-1720.
    by Daniel L Flamm
    posted to plasma introduction by these_morel on 2008-07-04 09:13:26 as **
  • The reaction of fluorine atoms with silicon
    Journal of Applied Physics, Vol. 52, No. 5. (1981), pp. 3633-3639.
    by Daniel L Flamm, Vincent M Donnelly, John A Mucha
    posted to plasma introduction by these_morel on 2008-07-04 09:08:59 as **
  • Ion- and electron-assisted gas-surface chemistry---An important effect in plasma etching
    Journal of Applied Physics, Vol. 50, No. 5. (1979), pp. 3189-3196.
    by JW Coburn, Harold F Winters
    posted to plasma introduction by these_morel on 2008-07-03 15:57:45 as **
  • Plasma etching---A discussion of mechanisms
    Journal of Vacuum Science and Technology, Vol. 16, No. 2. (1979), pp. 391-403.
    by JW Coburn, Harold F Winters
    posted to plasma introduction by these_morel on 2008-07-03 15:55:00 as **
  • A General Theory of the Plasma of an Arc
    Physical Review, Vol. 34, No. 6. (1929), 876.
    by Lewi Tonks, Irving Langmuir
    posted to plasma introduction by these_morel on 2008-07-03 15:06:45 as *
  • Molybdenum metal gate MOS technology for post-SiO<sub>2</sub> gate dielectrics
    Electron Devices Meeting, 2000. IEDM Technical Digest. International (2000), pp. 641-644.
    by Qiang Lu, R Lin, P Ranade, Yee C Yeo, Xiaofan Meng, H Takeuchi, Tsu-Jae King, Chenming Hu, Hongfa Luan, Songjoo Lee, Weiping Bai, Choong-Ho Lee, Dim-Lee Kwong, Xin Guo, Xiewen Wang, Tso-Ping Ma
    posted to nitrogen molybdenum metal-gate dual-metal-gate by these_morel on 2008-05-21 12:01:46 as **
  • Development of plasma etching process for sub-50 nm TaN gate
    Thin Solid Films, Vol. 504, No. 1-2. (10 May 2006), pp. 140-144.
    by Vladimir Bliznetsov, Rakesh Kumar, Lakshmi K Bera, Loh W Yip, Anyan Du, Tang E Hui
    posted to tan midgap metal-gate by these_morel on 2008-05-21 07:32:57 as **
  • Dual-metal gate technology for deep-submicron CMOS transistors
    VLSI Technology, 2000. Digest of Technical Papers. 2000 Symposium on (2000), pp. 72-73.
    by Qiang Lu, Yee C Yeo, P Ranade, H Takeuchi, Tsu-Jae King, Chenming Hu, SC Song, HF Luan, Dim-Lee Kwong, Dim-Lee Kwong
    posted to tin molybdenum dual-metal-gate by these_morel on 2008-05-21 07:18:20 as **
  • Single Metal Gate on High-k Gate Stacks for 45nm Low Power CMOS
    Electron Devices Meeting, 2006. IEDM '06. International (2006), pp. 1-4.
    by WJ Taylor, C Capasso, B Min, B Winstead, E Verret, K Loiko, D Gilmer, RI Hegde, J Schaeffer, J Schaeffer, E Luckowski, A Martinez, M Raymond, C Happ, DH Triyoso, S Kalpat, A Haggag, D Roan, JY Nguyen, LB La, L Hebert, J Smith, D Jovanovic, D Burnett, M Foisy, N Cave, PJ Tobin, SB Samavedam, Jr, S Venkatesan
    posted to tac metal-gate high-k hfo2 by these_morel on 2008-05-21 07:12:22 as **
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