these_morel's library 236 articles Export

	Développement de procédés de gravure de grille métallique W, WN pour les nœuds technologiques sub-45 nm [My Copy] (May 2009) by Thomas Morel posted to 45nm gravure microelectronique morel plasma thomas tungstene xps by these_morel on 2009-07-01 07:47:39 as
	Sub-0.1 mu m nitride hard mask open process without precuring the ArF photoresist [My Copy] Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 21, No. 2. (2003), pp. 790-794. by J. Kim, Y. S. Chae, W. S. Lee, et al.J. W. Shon, C. J. Kang, W. S. Han, J. T. Moon posted to photoresist wiggling by these_morel on 2009-06-10 10:23:19 as
	Tungsten metal gate etching in Cl[sub 2]/O[sub 2] inductively coupled high density plasmas [My Copy] Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 26, No. 6. (2008), pp. 1875-1882. by T. Morel, S. Bamola, R. Ramos, A. Beaurain, E. Pargon, O. Joubert posted to cl2-nf3-o2 cl2-o2 metal-gate tungsten xps by these_morel on 2009-06-02 15:05:04 as
	EFTEM imaging of ultra fine scaled [gamma]' precipitates in Ni-based superalloys [My Copy] Advanced Materials & Processes (March 2005), 50. by Raymond R. Unocic, Peter M. Sarosi, Michael J. Mills posted to eftem tem by these_morel on 2009-01-13 15:34:43 as
	Thermochemistry of the gaseous tungsten fluorides [My Copy] The Journal of Chemical Physics, Vol. 62, No. 8. (1975), pp. 3074-3079. by D. L. Hildenbrand posted to fluorine sf6 tungsten by these_morel on 2009-01-05 12:20:32 as
	Effect of capacitive coupling on inductively coupled fluorocarbon plasma processing [My Copy] Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 17, No. 6. (1999), pp. 3272-3280. by M. Schaepkens, N. R. Rueger, J. J. Beulens, et al.X. Li, T. E. F. M. Standaert, P. J. Matsuo, G. S. Oehrlein posted to parois pulverisation reactor by these_morel on 2008-12-30 09:11:08 as
	Principles of Plasma Discharges and Materials Processing , 2nd Edition [My Copy] (14 April 2005) by Michael A. Lieberman, Alan J. Lichtenberg posted to annexes plasma by these_morel on 2008-12-21 13:10:18 as
	Simulation of an Ar/Cl2 inductively coupled plasma : study of the effect of bias, power and pressure and comparison with experiments [My Copy] Journal of physics. D, Applied Physics, Vol. 41 (2008), 065207-1. by S. Tinck, W. Boullart, A. Bogaerts posted to annexes plasma by these_morel on 2008-12-21 13:06:27 as
	Monitoring sheath voltages and ion energies in high-density plasmas using noninvasive radio-frequency current and voltage measurements [My Copy] Journal of Applied Physics, Vol. 95, No. 9. (2004), pp. 4593-4604. by Mark A. Sobolewski posted to annexes plasma by these_morel on 2008-12-21 12:59:00 as
	Seasoning of plasma etching reactors: Ion energy distributions to walls and real-time and run-to-run control strategies [My Copy] Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 26, No. 3. (2008), pp. 498-512. by Ankur Agarwal, Mark J. Kushner posted to annexes plasma by these_morel on 2008-12-21 12:56:45 as
	The potential of neutral beams for deep silicon nanostructure etching [My Copy] Journal of Physics D: Applied Physics, Vol. 41, No. 2. (2008), 024004. by George Kokkoris, Angeliki Tserepi, Evangelos Gogolides posted to bowing by these_morel on 2008-12-17 13:00:26 as
	Microtrench Formation in Polysilicon Plasma Etching over Thin Gate Oxide [My Copy] Journal of the Electrochemical Society, Vol. 140, No. 8. (1993), pp. 2395-2401. by T. J. Dalton, J. C. Arnold, H. H. Sawin, S. Swan, D. Corliss posted to microtrenching by these_morel on 2008-12-17 12:22:47 as
	Polysilicon gate etching in high density plasmas. II. X-ray photoelectron spectroscopy investigation of silicon trenches etched using a chlorine-based chemistry [My Copy] Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 14, No. 3. (1996), pp. 1796-1806. by F. H. Bell, O. Joubert, L. Vallier posted to xps by these_morel on 2008-12-15 14:25:33 as
	Hartree-Slater subshell photoionization cross-sections at 1254 and 1487 eV [My Copy] Journal of Electron Spectroscopy and Related Phenomena, Vol. 8, No. 2. (1976), pp. 129-137. by J. H. Scofield posted to xps by these_morel on 2008-12-15 14:23:27 as along with 1 person slavo006
	Analyse de surface par ESCA - Principes et instrumentations [My Copy] Techniques de l'ingénieur, Vol. P2625 (1988) by Tran M. Duc posted to xps by these_morel on 2008-12-15 14:15:05 as
	Isolation and characterization of reactive intermediates and active catalysts in homogeneous catalysis [My Copy] Journal of the American Chemical Society, Vol. 107, No. 8. (1 April 1985), pp. 2380-2388. by Paul G. Gassman, David W. Macomber, Stephen M. Willging posted to tungsten wcl4 xps by these_morel on 2008-12-09 09:35:35 as
	Interactions entre les plasmas de gravure à couplage inductif et les parois du réacteur [My Copy] (2008) by Raphael Ramos posted to parois tungsten tungsten-nitride wsi by these_morel on 2008-12-08 14:58:26 as
	Gravure ionique réactive des couches minces de tungstène en plasmas radiofréquence de SF6/O2 [My Copy] (1993) by Marie-Claude Peignon posted to etching mass-spectrometry sf6-o2 tungsten by these_morel on 2008-12-08 07:11:53 as
	Group 6 Oxychlorides MOCl4, where M = Mo, W, and element 106 (Sg): Electronic Structure and Thermochemical Stability [My Copy] The Journal of Physical Chemistry, Vol. 99, No. 1. (1 January 1995), pp. 144-147. by V. Pershina, B. Fricke posted to tungsten wcl wocl by these_morel on 2008-12-03 10:23:25 as
	Impact of chemistry on profile control of resist masked silicon gates etched in high density halogen-based plasmas [My Copy] Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 21, No. 5. (2003), pp. 2174-2183. by X. Detter, R. Palla, Thomas I. Boutherin, et al.E. Pargon, G. Cunge, O. Joubert, L. Vallier posted to etching hbr overetch poly-si by these_morel on 2008-11-05 09:48:40 as
	Modulation du travail de sortie de grilles métalliques totalement siliciurées pour des dispositifs CMOS déca-nanométriques. [My Copy] (2007) by Delphine Aime posted to introduction polydepletion work-function by these_morel on 2008-10-27 09:19:02 as
	Cleaning aluminum fluoride coatings from plasma reactor walls in SiCl4/Cl2 plasmas [My Copy] Plasma Sources Science and Technology, Vol. 16, No. 4. (November 2007), pp. 711-715. by Ramos, R., Cunge, et al. G., Pelissier, B., Joubert, O. posted to cleaning parois sicl4-cl2 by these_morel on 2008-10-24 09:22:51 as
	Plasma reactor dry cleaning strategy after TiN, TaN and HfO[sub 2] etching processes [My Copy] Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 26, No. 1. (2008), pp. 181-188. by R. Ramos, G. Cunge, O. Joubert posted to cleaning parois xps by these_morel on 2008-10-21 09:41:08 as
	Mechanism of Interstitial Oxygen Diffusion in Hafnia [My Copy] Physical Review Letters, Vol. 89, No. 22. (12 November 2002), 225901. by A. S. Foster, A. L. Shluger, R. M. Nieminen posted to hfo2 oxygen by these_morel on 2008-10-17 09:52:39 as
	Complete re-estimation of the gate leakage current limit for sub-0.12um technologies (EOT= 1.8-2.8nm) [My Copy] Solid-State Device Research Conference, 2000. Proceeding of the 30th European In Solid-State Device Research Conference, 2000. Proceeding of the 30th European (2000), pp. 304-307. by M. Bidaud, F. Arnaud, J. L. Autran, K. Barla posted to introduction tunneling by these_morel on 2008-10-01 09:22:34 as
	Effect of additive gases on the selective etching of tungsten films using inductively coupled halogen-based plasmas [My Copy] Thin Solid Films In Proceedings of the 30th International Conference on Metallurgical Coatings and Thin Films, Vol. 447-448 (30 January 2004), pp. 586-591. by S. D. Park, Y. J. Lee, N. G. Cho, et al.S. G. Kim, H. H. Choe, M. P. Hong, G. Y. Yeom posted to ar cf4-cl2 icp n2 o2 tungsten by these_morel on 2008-09-19 09:57:32 as
	Parallel angle resolved XPS investigations on 12 in. wafers for the study of W and WSix oxidation in air [My Copy] Microelectronic Engineering, Vol. 85, No. 9. (September 2008), pp. 1882-1887. by B. Pelissier, A. Beaurain, J. P. Barnes, R. Gassilloud, F. Martin, O. Joubert posted to arxps oxidation tungsten xps by these_morel on 2008-09-19 08:41:13 as
	Design of notched gate processes in high density plasmas [My Copy] Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 20, No. 5. (2002), pp. 2024-2031. by J. Foucher, G. Cunge, L. Vallier, O. Joubert posted to microloading notching passivation by these_morel on 2008-09-18 14:41:27 as
	Microloading effect in reactive ion etching [My Copy] The 40th National Symposium of the American Vacuum Society, Vol. 12, No. 4. (1994), pp. 1962-1965. by C. Hedlund, H. O. Blom, S. Berg posted to microloading by these_morel on 2008-09-18 14:38:16 as
	On the origin of the notching effect during etching in uniform high density plasmas [My Copy] Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 15, No. 1. (1997), pp. 70-87. by Gyeong S. Hwang, Konstantinos P. Giapis posted to notching poly-si by these_morel on 2008-09-18 13:29:55 as
	Influence of the polysilicon doping on the electrical quality of thin oxides: a confrontation between vertical and horizontal furnaces [My Copy] Materials Science in Semiconductor Processing, Vol. 4, No. 1-3. (6 February 2001), pp. 153-157. by G. Franco, M. Priulla, G. Renna, G. Scerra posted to doping poly-si resistivity by these_morel on 2008-09-17 13:17:39 as
	Silicon doping effects in reactive plasma etching [My Copy] Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 4, No. 2. (1986), pp. 468-475. by Young H. Lee, Mao M. Chen posted to doping etching plasma silicon by these_morel on 2008-09-16 15:30:03 as
	Etching: Closed-loop bias voltage control for plasma etching [My Copy] Solid State Technology, Vol. 43, No. 2. (February 2000) by Roger Patrick, Scott Baldwin, Norman Williams posted to dispositifs-experimentaux lam by these_morel on 2008-09-11 15:43:00 as
	Transmission electron microscopy: A critical analytical tool for ULSI technology [My Copy] The 1998 international conference on characterization and metrology for ULSI technology, Vol. 449, No. 1. (1998), pp. 667-675. by David Venables, David W. Susnitzky, John A. Mardinly edited by David G. Seiler, Alain C. Diebold, Murray W. Bullis, Thomas J. Shaffner, Robert Mcdonald, Jane E. Walters posted to dispositifs-experimentaux eels tem by these_morel on 2008-09-11 09:50:02 as
	Anisotropic etching of SiO[sub 2] in low-frequency CF[sub 4]/O[sub 2] and NF[sub 3]/Ar plasmas [My Copy] Journal of Applied Physics, Vol. 55, No. 1. (1984), pp. 242-252. by V. M. Donnelly, D. L. Flamm, Dautremont W. C. Smith, D. J. Werder posted to actinometry dispositifs-experimentaux nf3 by these_morel on 2008-09-11 08:05:35 as
	Etude, fabrication et propriétés de transport de transistors CMOS associant un diélectrique haute permittivité et un canal de conduction haute mobilité [My Copy] (2005) by Olivier Weber posted to cmos introduction by these_morel on 2008-09-08 12:43:36 as
	Is actinometry reliable for monitoring Si and silicone halides produced in silicon etching plasmas? A comparison with their absolute densities measured by UV broad band absorption [My Copy] The European Physical Journal Applied Physics, Vol. 33 (2006), pp. 205-212. by M. Kogelschatz, G. Cunge, N. Sadeghi posted to absorption actinometry etching silicon by these_morel on 2008-09-05 13:27:46 as
	Silicon etching mechanisms in a CF[sub 4]/H[sub 2] glow discharge [My Copy] Journal of Applied Physics, Vol. 62, No. 2. (1987), pp. 662-672. by Gottlieb S. Oehrlein, Holly L. Williams posted to cf4 etching fluorocarbon silicon by these_morel on 2008-09-04 13:20:25 as
	RBS-ERDA, XPS and XRD characterizations of PECVD tungsten nitride films [My Copy] Applied Surface Science, Vol. 125, No. 3-4. (March 1998), pp. 313-320. by C. Meunier, C. Monteil, C. Savall, et al.F. Palmino, J. Weber, R. Berjoan, J. Durand posted to tungsten-nitride xps by these_morel on 2008-08-29 15:49:33 as
	Effect of NH[sub 3] on Film Properties of MOCVD Tungsten Nitride from Cl[sub 4](CH[sub 3]CN)W(N[sup i]Pr) [My Copy] Journal of The Electrochemical Society, Vol. 151, No. 10. (2004), pp. G697-G703. by Omar J. Bchir, Kee C. Kim, Timothy J. Anderson, Valentin Craciun, Benjamin C. Brooks, Lisa M. White posted to nh3 tungsten-nitride xps by these_morel on 2008-08-27 16:04:19 as
	Highly Anisotropic Etching of Tungsten-Nitride for an X-Ray Mask Absorber with an Inductively Coupled Plasma System [My Copy] Japanese Journal of Applied Physics, Vol. 37 (1998), pp. 6819-6823. by Hong G. Lee, Seung Y. Lee, Ho S. Moon, Sang H. Kim, Joo-Hiuk S. Sohn, Jinho Ahn posted to etching icp sf6-ar sf6-n2 tungsten-nitride by these_morel on 2008-08-25 12:23:31 as
	Low Pressure Chemical Vapor Deposition of Tungsten on Polycrystalline and Single-Crystal Silicon via the Silicon Reduction [My Copy] Journal of Electrochemical Society, Vol. 131, No. 11. (November 1984), pp. 2702-2708. by K. Y. Tsao, H. H. Busta posted to interconnections lpcvd tungsten by these_morel on 2008-08-25 08:37:49 as
	Integrated Chemical Vapor Deposition and Plasma Etchback of Tungsten in a Multichamber, Single-Wafer System [My Copy] Journal of the Electrochemical Society, Vol. 138, No. 10. (1991), pp. 3008-3013. by Paul E. Riley, Thomas E. Clark posted to etchback sf6-ar tungsten by these_morel on 2008-08-21 08:12:17 as
	Self-aligned technology for tungsten-contacted InP-based etched mesa laser devices [My Copy] Applied Physics Letters, Vol. 59, No. 3. (1991), pp. 286-288. by A. Katz, S. J. Pearton, M. Geva posted to ecr etching tungsten by these_morel on 2008-08-20 12:58:34 as
	Highly anisotropic etching of submicrometer features on tungsten [My Copy] Journal of Applied Physics, Vol. 78, No. 11. (1995), pp. 6780-6783. by F. Bounasri, E. Gat, M. Chaker, M. Moisan, J. Margot, M. F. Ravet posted to etching magnetoplasma tungsten by these_morel on 2008-08-20 12:56:04 as
	Microscopie électronique en transmission Transmission conventionnelle et balayage en transmission [My Copy] Techniques de l'ingénieur (April 1988) by François Louchet, Jean-Louis Verger-Gaugry, Jany Thibault-Desseaux, Pierre Guyot posted to dispositifs-experimentaux tem by these_morel on 2008-08-19 13:51:43 as
	Plasmas froids de décharge - Applications et diagnostic [My Copy] Techniques de l'ingénieur, Vol. D2835 (November 1997) by Anne-Marie Pointu, Jérôme Perrin posted to dispositifs-experimentaux reactor by these_morel on 2008-08-19 07:10:04 as
	A simple analysis of an inductive RF discharge [My Copy] Plasma Sources Science and Technology, Vol. 1, No. 3. (1992), pp. 179-186. by R. B. Piejak, V. A. Godyak, B. M. Alexandrovich posted to dispositifs-experimentaux icp plasma reactor by these_morel on 2008-08-18 12:31:10 as
	Application of a low-pressure radio frequency discharge source to polysilicon gate etching [My Copy] Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 8, No. 1. (1990), pp. 1-4. by J. M. Cook, D. E. Ibbotson, D. L. Flamm posted to dispositifs-experimentaux icp plasma reactor by these_morel on 2008-08-18 12:30:18 as
	Review of inductively coupled plasmas for plasma processing [My Copy] Plasma Sources Science and Technology, Vol. 1, No. 2. (1992), pp. 109-116. by J. Hopwood posted to dispositifs-experimentaux icp plasma reactor by these_morel on 2008-08-18 12:29:26 as

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plasma	54
etching	48
introduction	46
tungsten	45
xps	39
dispositifs-experimentaux	26
high-k	22
hfo2	19
rie	16
cl2	15
icp	15
tungsten-nitride	15
cl2-o2	14
poly-si	13
actinometry	11
microelectronics	11
gate	10
cf4	9
dielectric	9
mass-spectrometry	9
metal	9
silicon	9
fluorocarbon	8
metal-gate	8
parois	8
absorption	7
cf4-o2	7
fluorine	7
molybdenum	7
passivation	7
tin	7
plasmas	6
polydepletion	6
reactor	6
sf6	6
cleaning	5
cmos	5
hbr	5
notching	5
resist-trimming	5
sf6-ar	5
sf6-n2	5
sf6-o2	5
tan	5
titane_nitride	5
wsi	5
annexes	4
bcl3	4
ecr	4
hbr-cl2-o2	4
nf3	4
oxidation	4
sio2	4
wet-etching	4
ar	3
chemical-vapor-deposition	3
decomposition	3
dissociation	3
dual-metal-gate	3
effet-de-charge	3
nitrogen	3
optical-emission-spectroscopy	3
recess	3
resistivity	3
tem	3
temperature	3
tungsten-oxide	3
tunneling	3
volatility	3
work-function	3
zro2	3
arxps	2
bcl3-o2	2
c4f8	2
cf4-cl2	2
chf3	2
cl2-nf3-o2	2
deposition	2
doping	2
hbr-o2	2
helicon-plasma	2
hfalo	2
incorporation	2
materials	2
meb	2
microloading	2
nf3-o2	2
o2	2
polymer_layer	2
ruthenium	2
sicl4-cl2	2
titanium	2
wcl	2
wocl	2
wsix	2
xrr	2
3d-integration	1
45nm	1
aluminium	1
angle	1
bowing	1
c4f8-ar-h2	1
capacitive	1
cbrf3	1
ccl4-o2	1
cf3-cl	1
chf3-cl2-bcl3	1
clo	1
co	1
co2	1
damage	1
deformation-resist	1
dhf	1
dry-etching	1
eels	1
eftem	1
eot	1
etchback	1
floating_sample	1
gate-patterning	1
gravure	1
hf	1
hfn	1
hfon	1
hfsio	1
hfsion	1
interconnections	1
interferometry	1
lam	1
line-edge-roughness	1
lpcvd	1
magnetoplasma	1
masking-materials	1
microelectronique	1
microtrenching	1
midgap	1
molecular-beam-system	1
moores-law	1
morel	1
mosi	1
n2	1
negative-ion	1
neural-networks	1
new-devices	1
nf3-h2	1
nf3-he	1
nh3	1
overetch	1
oxygen	1
photoresist	1
pulverisation	1
selectivity	1
sf6-ar-cl2	1
sf6-chf3	1
silicidation	1
sputter-deposition	1
tac	1
taper	1
tcp	1
tcp_9400	1
thomas	1
time-delay-effect	1
tungstene	1
uhf-ecr	1
vlsi	1
wcl4	1
wco6	1
wiggling	1
zralo	1

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