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Thermal decomposition mechanisms of tungsten nitride CVD precursors on Cu(1 1 1) Export

Surface Science, Vol. 600, No. 3. (1 February 2006), pp. 743-754.

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chemical-vapor-deposition tungsten-nitride xps

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Chemisorption and thermal decomposition of metallorganic chemical vapor deposition precursors, (t-BuN)2W(NHBu-t)2, bis(tert-butylimido)bis(tert-butylamido)tungsten (BTBTT) and (t-BuN)2W(NEt2)2, bis(tert-butylimido)bis(diethylamido)tungsten (BTBDT), on Cu(1 1 1) have been investigated by means of thermal desorption spectroscopy (TDS) and synchrotron-based X-ray photoelectron spectroscopy (SR-XPS) under ultrahigh vacuum conditions. The precursors remain intact upon chemisorption on Cu(1 1 1) at 100 K, and at 300 K both precursors decompose readily via the characteristic hydride abstraction/elimination pathways to produce two stable surface intermediates for each precursor. For BTBTT, one species is W(=NBu-t)3 and the other is proposed to be a bridged amido complex, [(t-BuN)2W([mu]-NBu-t)]2. In comparison, a W-imine complex and a W-N-C metallacycle are two intermediates produced from BTBDT. Annealing toward 800 K further decomposes the intermediates and the detectable desorption species are completely derived from the ligands. The desorption products from BTBTT include t-butylamine generated from [alpha]-H abstraction, isobutylene from [gamma]-H elimination, acetonitrile from [beta]-methyl elimination, and molecular hydrogen. In addition to these desorption species, BTBDT produces hydrogen cyanide and imine (EtN = CHMe) via [beta]-H elimination, not possible with BTBTT due to the absence of [beta]-H in the ligands. Eventually, tungsten nitrides incorporating oxygen atoms and a small amount of graphitic carbons are formed and the stoichiometry is approximated as WN1.5O0.1. Oxygen incorporation, driven by a large oxide formation enthalpy, is sensitively dependent on the moisture exposure in UHV environment.


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