Molybdenum metal gate MOS technology for post-SiO2 gate dielectrics

by: Qiang Lu, R Lin, P Ranade, Yee C Yeo, Xiaofan Meng, H Takeuchi, Tsu-Jae King, Chenming Hu, Hongfa Luan, Songjoo Lee, Weiping Bai, Choong-Ho Lee, Dim-Lee Kwong, Xin Guo, Xiewen Wang, Tso-Ping Ma

Electron Devices Meeting, 2000. IEDM Technical Digest. International (2000), pp. 641-644.

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Abstract

Mo metal gate p-MOSFETs with several advanced gate dielectrics were fabricated. A suitable p-MOSFET work function was achieved and good device characteristics were obtained in all cases. Thermodynamic stability of Mo on Si3N4, ZrO2 and ZrSiO4 was verified by good carrier mobility agreement with the universal mobility model

@inproceedings{128, abstract = {Mo metal gate p-MOSFETs with several advanced gate dielectrics were fabricated. A suitable p-MOSFET work function was achieved and good device characteristics were obtained in all cases. Thermodynamic stability of Mo on Si3N4, ZrO2 and ZrSiO4 was verified by good carrier mobility agreement with the universal mobility model}, author = {Lu, Qiang and Lin, R. and Ranade, P. and Yeo, Yee C. and Meng, Xiaofan and Takeuchi, H. and King, Tsu-Jae and Hu, Chenming and Luan, Hongfa and Lee, Songjoo and Bai, Weiping and Lee, Choong-Ho and Kwong, Dim-Lee and Guo, Xin and Wang, Xiewen and Ma, Tso-Ping }, booktitle = {Electron Devices Meeting, 2000. IEDM Technical Digest. International}, citeulike-article-id = {2819392}, doi = {http://dx.doi.org/10.1109/IEDM.2000.904401}, journal = {Electron Devices Meeting, 2000. IEDM Technical Digest. International}, keywords = {dual-metal-gate, metal-gate, molybdenum, nitrogen}, pages = {641--644}, posted-at = {2008-05-21 12:01:46}, priority = {2}, title = {Molybdenum metal gate MOS technology for post-SiO2 gate dielectrics}, url = {http://dx.doi.org/10.1109/IEDM.2000.904401}, year = {2000} }

RIS record

TY - CONF ID - 128 L3 - citeulike-article-id:2819392 TI - Molybdenum metal gate MOS technology for post-SiO2 gate dielectrics T2 - Electron Devices Meeting, 2000. IEDM Technical Digest. International JF - Electron Devices Meeting, 2000. IEDM Technical Digest. International SP - 641 EP - 644 N2 - Mo metal gate p-MOSFETs with several advanced gate dielectrics were fabricated. A suitable p-MOSFET work function was achieved and good device characteristics were obtained in all cases. Thermodynamic stability of Mo on Si3N4, ZrO2 and ZrSiO4 was verified by good carrier mobility agreement with the universal mobility model KW - dual-metal-gate KW - metal-gate KW - molybdenum KW - nitrogen AU - Lu, Qiang AU - Lin, R AU - Ranade, P AU - Yeo, Yee AU - Meng, Xiaofan AU - Takeuchi, H AU - King, Tsu-Jae AU - Hu, Chenming AU - Luan, Hongfa AU - Lee, Songjoo AU - Bai, Weiping AU - Lee, Choong-Ho AU - Kwong, Dim-Lee AU - Guo, Xin AU - Wang, Xiewen AU - Ma, Tso-Ping PY - 2000/// UR - http://dx.doi.org/10.1109/IEDM.2000.904401 ER -

RIS BibTeX

Molybdenum metal gate MOS technology for post-SiO<sub>2</sub> gate dielectrics